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Semiconductor device and method for fabricating the same

  • US 10,580,891 B2
  • Filed: 11/16/2018
  • Issued: 03/03/2020
  • Est. Priority Date: 10/14/2015
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a substrate including a first region and a second region;

    a first gate spacer on the first region, the first gate spacer defining a first trench;

    a second gate spacer on the second region, the second gate spacer defining a second trench;

    a first gate electrode filling the first trench;

    a second gate electrode filling the second trench;

    a first interlayer insulating layer on the substrate, the first interlayer insulating layer surrounding the first gate spacer; and

    a second interlayer insulating layer on the substrate, the second interlayer insulating layer surrounding the second gate spacer,wherein the first interlayer insulating layer and the second interlayer insulating layer each includes a lower portion and an upper portion,the upper portion of the first interlayer insulating layer and the upper portion of the second interlayer insulating layer each include germanium, andthe lower portion of the first interlayer insulating layer and the lower portion of the second interlayer insulating layer each do not include germanium.

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