Graphene devices for terahertz detection and emission

• US 10,580,924 B2
• Filed: 02/28/2019
• Issued: 03/03/2020
• Est. Priority Date: 04/04/2018
• Status: Active Grant

• Current Assignee: The Florida International University Board of Trustees (State University System of Florida)
• Original Assignee: The Florida International University Board of Trustees (State University System of Florida)
• Inventors: Karabiyik, Mustafa, Pala, Nezih
• Primary Examiner(s): Maruf, Sheikh
• Application Number:
  US16/288,748
• Publication Number:
  US 20190312171A1
• Time in Patent Office: 369 Days
• Field of Search: 257 29
• CPC Class Codes: G01J 1/42 using electric radiation detectors optical or mechanical part G01J1/04; by comparison with a reference light or electric value G01J1/10
• CPC Class Codes: G01J 3/42 Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry beam switching arrangements G01J3/08
• CPC Class Codes: G01J 5/046 Materials; Selection of thermal materials
• CPC Class Codes: G01J 5/0837 Microantennas, e.g. bow-tie
• CPC Class Codes: G01J 5/20 using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
• CPC Class Codes: H01L 29/1606 Graphene
• CPC Class Codes: H01L 31/022408 for devices characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/028 including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/0352 characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
• CPC Class Codes: H01L 31/1136 the device being a metal-insulator-semiconductor field-effect transistor
• CPC Class Codes: H10K 10/482 the IGFET comprising multiple separately-addressable gate electrodes

Abstract

Devices and methods for Terahertz (THz) sensing/detection, imaging, spectroscopy, and communication are provided. A graphene-based field effect transistor (FET) can have a quality factor of greater than 400 and a responsivity of at least 400 Volts per Watt. A FET sensor can include a substrate, a gate disposed on the substrate, an insulation layer disposed on the gate and the substrate, a source terminal and a drain terminal disposed on the substrate, and a graphene layer disposed on the insulation layer.

Claims

1. A terahertz sensor, comprising:

a substrate;

a gate disposed on the substrate;

an insulation layer disposed on the gate and the substrate;

a source terminal and a drain terminal disposed on the substrate; and

a graphene layer disposed on the insulation layer, the graphene layer having a lower surface and an upper surface opposite from the upper surface,

the lower surface of the graphene layer being in direct physical contact with the insulation layer,

the graphene layer comprising a gate portion that is disposed directly over the gate, and

the upper surface of the entire gate portion of the graphene layer being exposed.

2. The terahertz sensor according to claim 1, the insulation layer comprising an air gap,

the graphene layer being in direct physical contact with the insulation layer at the gate portion thereof, and

the graphene layer being disposed over the air gap at a portion of the graphene layer that is not disposed over the gate.

3. The terahertz sensor according to claim 1, the insulation layer comprising an air gap disposed at a side of the gate, and

the graphene layer being in direct physical contact with the insulation layer at the gate portion thereof.

4. The terahertz sensor according to claim 1, the graphene layer being further disposed on the source terminal.

5. The terahertz sensor according to claim 4, the graphene layer being further disposed on the drain terminal.

6. The terahertz sensor according to claim 1, the graphene layer being further disposed on the drain terminal.

7. The terahertz sensor according to claim 1, the graphene layer being further disposed between the substrate and the source terminal.

8. The terahertz sensor according to claim 7, the graphene layer being further disposed between the substrate and the drain terminal.

9. The terahertz sensor according to claim 8, the graphene layer being further disposed between the insulation layer and the source terminal, and

the graphene layer being further disposed between the insulation layer and the drain terminal.

10. The terahertz sensor according to claim 1, the terahertz sensor having a quality factor (Q) of greater than 400 and a responsivity of at least 400 Volts per Watt.

11. A terahertz sensor, comprising:

a substrate;

a plurality of gates disposed on the substrate;

an insulation layer disposed on the plurality of gates and the substrate;

a source terminal and a drain terminal disposed on the substrate; and

a graphene layer disposed on the insulation layer over each gate of the plurality of gates, the graphene layer having a lower surface and an upper surface opposite from the upper surface,

the lower surface of the graphene layer being in direct physical contact with the insulation layer,

the graphene layer comprising gate portions that are respectively disposed directly over the gates of the plurality of gates, and

the upper surface of each entire gate portion of the graphene layer being exposed.

12. The terahertz sensor according to claim 11, the insulation layer comprising a plurality of air gaps,

the graphene layer being in direct physical contact with the insulation layer at the gate portions thereof, and

the graphene layer being disposed over the air gaps of the plurality of air gaps at portions of the graphene layer that are not disposed over any gate of the plurality of gates.

13. The terahertz sensor according to claim 11, the insulation layer comprising a plurality of air gaps, each air gap of the plurality of air gaps disposed at a side of a gate of the plurality of gates, and

the graphene layer being in direct physical contact with the insulation layer at the gate portions thereof.

14. The terahertz sensor according to claim 11, the graphene layer being further disposed on the source terminal.

15. The terahertz sensor according to claim 14, the graphene layer being further disposed on the drain terminal.

16. The terahertz sensor according to claim 11, the graphene layer being further disposed between the substrate and the source terminal.

17. The terahertz sensor according to claim 16, the graphene layer being further disposed between the substrate and the drain terminal.

18. The terahertz sensor according to claim 17, the graphene layer being further disposed between the insulation layer and the source terminal, and

the graphene layer being further disposed between the insulation layer and the drain terminal.

19. The terahertz sensor according to claim 11, the terahertz sensor having a quality factor (Q) of greater than 400 and a responsivity of at least 400 Volts per Watt.

20. A terahertz sensor, comprising:

a substrate;

a plurality of gates disposed on the substrate;

an insulation layer disposed on the plurality of gates and the substrate;

a source terminal and a drain terminal disposed on the substrate; and

a graphene layer disposed on the insulation layer over each gate of the plurality of gates, the graphene layer having a lower surface and an upper surface opposite from the upper surface,

the graphene layer being in direct physical contact with the insulation layer,

the insulation layer comprising a plurality of air gaps, each air gap of the plurality of air gaps disposed at a side of a gate of the plurality of gates,

the graphene layer being in direct physical contact with the insulation layer at gate portions thereof respectively disposed directly over the gates of the plurality of gates,

the graphene layer being disposed over the air gaps of the plurality of air gaps at portions of the graphene layer that are not disposed over any gate of the plurality of gates,

the graphene layer being further disposed in direct physical contact with the source terminal, either on a top surface of the source terminal or between the source terminal and the substrate,

the graphene layer being further disposed in direct physical contact with the drain terminal, either on a top surface of the drain terminal or between the drain terminal and the substrate,

the terahertz sensor having a quality factor (Q) of greater than 400 and a responsivity of at least 400 Volts per Watt, and

the upper surface of each entire gate portion of the graphene layer being exposed.