Optoelectronic semiconductor component

• US 10,580,941 B2
• Filed: 10/19/2017
• Issued: 03/03/2020
• Est. Priority Date: 07/29/2008
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Inventors: Binder, Michael, Linkov, Alexander, Zeiler, Thomas, Brick, Peter
• Primary Examiner(s): Chen, Jack S
• Application Number:
  US15/788,645
• Publication Number:
  US 20180040781A1
• Time in Patent Office: 866 Days
• Field of Search: None
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 2933/005 relating to encapsulations
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/54 having a particular shape

Abstract

An optoelectronic semiconductor component comprising a connection carrier with a mounting face and an electrically insulating base member. An optoelectronic semiconductor chip is arranged on the mounting face of the connection carrier. A radiation-transmissive body having four side faces is provided. The radiation-transmissive body surrounds the semiconductor chip in such a way that the radiation-transmissive body envelops outer faces of the optoelectronic semiconductor chip not facing the connection carrier in form-fitting manner. The radiation-transmissive body comprises at least one side face which extends at least in places at an angle of between 60° and 70° to the mounting face. The base member has a thickness which amounts to at most 250 μm.

Claims

1. An optoelectronic semiconductor component comprising:

a connection carrier with a mounting face and an electrically insulating base member;

an optoelectronic semiconductor chip, which is arranged on the mounting face of the connection carrier; and

a radiation-transmissive body having four side faces,

wherein the radiation-transmissive body surrounds the semiconductor chip in such a way that the radiation-transmissive body envelops outer faces of the optoelectronic semiconductor chip not facing the connection carrier in form-fitting manner,

wherein the four side faces of the radiation-transmissive body are arranged lateral to the optoelectronic semiconductor chip,

wherein the radiation-transmissive body comprises at least one side face which extends at least in places at an angle of between 60° and

70°

to the mounting face, and

wherein a planarisation layer is arranged on at least the at least one side face which extends at least in places at an angle of between 60° and

70°

to the mounting face.

2. The optoelectronic semiconductor component according to claim 1, wherein the base member is made of a ceramic material.

3. The optoelectronic semiconductor component according to claim 1, wherein the radiation-transmissive body has a height and wherein the sum of the thickness of the base member of the connection carrier and the height of the radiation-transmissive body amounts to at least 700 μ

m and at most 800 μ

m.

4. The optoelectronic semiconductor component according to claim 1, wherein the thickness of the base member is at least 100 μ

m.

5. The optoelectronic semiconductor component according to claim 1, wherein the at least one side face, which extends at least in places at an angle of between 60°

and 70°

to the mounting face, is produced by a singulation process.

6. The optoelectronic semiconductor component according to claim 1, wherein the radiation-transmissive body directly adjoins the mounting face of the connection carrier.

7. The optoelectronic semiconductor component according to claim 1, wherein the planarisation layer is applied to the at least one side face of the radiation-transmissive body, which side face is produced by a singulation process.

8. The optoelectronic semiconductor component according to claim 1, wherein the four side faces of the radiation transmissive body face away from the optoelectronic semiconductor chip.

9. The optoelectronic semiconductor component according to claim 1, wherein the planarization layer is arranged exclusively on the at least one side face.

10. An optoelectronic semiconductor component comprising:

a connection carrier with a mounting face;

an optoelectronic semiconductor chip, which is arranged on the mounting face of the connection carrier; and

a radiation-transmissive body having four side faces,

wherein the radiation-transmissive body surrounds the semiconductor chip in such a way that the radiation-transmissive body envelops outer faces of the optoelectronic semiconductor chip not facing the connection carrier in form-fitting manner,

wherein the four side faces of the radiation-transmissive body are arranged lateral to the optoelectronic semiconductor chip,

wherein the radiation-transmissive body comprises at least one side face which extends at least in places at an angle of less than 90°

to the mounting face, and

wherein the optoelectronic semiconductor chip is arranged non-centered relative to the radiation-transmissive body,

wherein a planarisation layer is arranged on the at least one side face which extends at least in places at an angle of less than 90°

to the mounting face.

11. The optoelectronic semiconductor component according to claim 10, all four side faces of the radiation-transmissive body extend at least in places at an angle of less than 90°

to the mounting face.