Method of manufacturing semiconductor device, substrate processing apparatus and recording medium

• US 10,586,698 B2
• Filed: 03/10/2017
• Issued: 03/10/2020
• Est. Priority Date: 03/11/2016
• Status: Active Grant

• Current Assignee: Kokusai Electric Corp.
• Original Assignee: Kokusai Electric Corp.
• Inventors: Hashimoto, Yoshitomo, Takasawa, Yushin, Nagato, Masaya
• Primary Examiner(s): Chin, Edward
• Application Number:
  US15/456,284
• Publication Number:
  US 20170263439A1
• Time in Patent Office: 1,096 Days
• Field of Search: 257E21435, 257E2706, 257390, 438301, 977755
• CPC Class Codes: C23C 16/30 Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• CPC Class Codes: C23C 16/308 Oxynitrides
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 16/36 Carbonitrides
• CPC Class Codes: C23C 16/4482 by bubbling of carrier gas through liquid source material
• CPC Class Codes: C23C 16/45527 characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
• CPC Class Codes: C23C 16/45531 specially adapted for making ternary or higher compositions
• CPC Class Codes: C23C 16/45544 characterized by the apparatus
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02167 the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/02362 formation of intermediate layers, e.g. capping layers or diffusion barriers

Abstract

The present disclosure provides a technique including a method of manufacturing a semiconductor device, which is capable of improving the characteristics of a film formed on a substrate. The method of manufacturing a semiconductor device may include: (a) forming a first film containing a predetermined element, oxygen, carbon and nitrogen on a substrate; and (b) forming a second film thinner than the first film on a top surface of the first film, the second film having an oxygen concentration lower than an oxygen concentration of the first film or having oxygen and carbon concentrations lower than oxygen and carbon concentrations of the first film.

Claims

1. A method of manufacturing a semiconductor device, comprising:

(a) forming a first film on a substrate by supplying first gases containing a predetermined element, oxygen, carbon and nitrogen, wherein the first gases comprise an oxygen-containing gas; and

(b) forming a second film thinner than the first film on a top surface of the first film by supplying second gases containing the predetermined element, oxygen, carbon and nitrogen, wherein the second gases comprise an oxygen-containing gas, and a concentration of each of the predetermined element, oxygen, carbon and nitrogen in the second gases is greater than zero, and

wherein at least one selected from the group consisting of a supply duration, a flow rate, a partial pressure, and a concentration of the oxygen-containing gas in the second gases supplied in (b) is less than that of the oxygen-containing gas in the first gases supplied in (a) such that the second film has an oxygen concentration lower than an oxygen concentration of the first film or has oxygen and carbon concentrations lower than oxygen and carbon concentrations of the first film.

2. The method of claim 1, wherein a thickness of the second film ranges from 1 nm to 2 nm.

3. The method of claim 1, wherein the second film comprises the predetermined element, oxygen, carbon and nitrogen.

4. The method of claim 1, wherein the second film comprises the predetermined element, carbon and nitrogen.

5. The method of claim 1, wherein the second film comprises the predetermined element and nitrogen.

6. The method of claim 1, wherein a nitrogen concentration of the first film is lower than the carbon concentration of the first film.

7. The method of claim 1, wherein (a) comprises supplying at least one gas selected from a group consisting of a gas containing the predetermined element, a gas containing the predetermined element and carbon, a gas containing carbon and nitrogen, a carbon-containing gas, a nitrogen-containing gas and a first oxygen-containing gas to the substrate, and (b) comprises supplying at least one gas selected from the group consisting of the gas containing the predetermined element, the gas containing the predetermined element and carbon, the gas containing carbon and nitrogen, the carbon-containing gas, the nitrogen-containing gas and the first oxygen-containing gas to the substrate.

8. The method of claim 1, wherein (a) comprises performing a cycle a predetermined number of times, the cycle comprising:

(a-1) supplying at least one gas selected from a group consisting of a gas containing the predetermined element and a gas containing the predetermined element and carbon to the substrate;

(a-2) supplying at least one gas selected from a group consisting of a gas containing carbon and nitrogen, a carbon-containing gas and a nitrogen-containing gas to the substrate; and

(a-3) supplying a first oxygen-containing gas to the substrate.

9. The method of claim 8, wherein (b) comprises performing a cycle comprising:

(a-1), (a-2) and (a-3) a predetermined number of times.

10. The method of claim 9, wherein an amount of the first oxygen-containing gas supplied in each cycle of (b) is smaller than an amount of the first oxygen-containing gas supplied in each cycle of (a).

11. The method of claim 9, wherein a supply duration of the first oxygen-containing gas supplied in each cycle of (b) is shorter than a supply duration of the first oxygen-containing gas supplied in each cycle of (a), or at least one of flow rate, partial pressure and concentration of the first oxygen-containing gas supplied in each cycle of (b) is lower than at least one of flow rate, partial pressure and concentration of the first oxygen-containing gas supplied in each cycle of (a), respectively.

12. The method of claim 8, wherein (b) comprises performing a cycle a predetermined number of times, the cycle comprising:

(b-1) supplying at least one gas selected from the group consisting of the gas containing the predetermined element and the gas containing the predetermined element and carbon to the substrate;

(b-2) supplying at least one gas selected from the group consisting of the gas containing carbon and nitrogen, the carbon-containing gas and the nitrogen-containing gas to the substrate; and

(b-3) supplying a second oxygen-containing gas to the substrate, the second oxygen-containing gas having;

a molecular structure different from a molecular structure of the first oxygen-containing gas; and

an oxidative power lower than an oxidative power of the first oxygen-containing gas.

13. The method of claim 8, wherein (b) comprises performing a cycle comprising:

(a-1) and (a-2) a predetermined number of times.

14. The method of claim 8, wherein (b) comprises performing a cycle a predetermined number of times, the cycle comprising:

(b-1) supplying the gas containing the predetermined element to the substrate; and

(b-2) supplying the nitrogen-containing gas to the substrate.

15. The method of claim 14, wherein a flow rate of the nitrogen-containing gas supplied in (b) is greater than a flow rate of the nitrogen-containing gas supplied in (a).

16. The method of claim 1, wherein a carbon concentration of the second film is lower than a carbon concentration of the first film.