×

Buried power rails

  • US 10,586,765 B2
  • Filed: 06/18/2018
  • Issued: 03/10/2020
  • Est. Priority Date: 06/22/2017
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device, comprising:

  • a first power rail formed in a first rail opening within a first isolation trench;

    a first dielectric cap on the first power rail within the first rail opening, the first dielectric cap isolating the first power rail from a conductive pattern structure on the first dielectric cap;

    a second power rail having substantially a same thickness as the first power rail and being formed in a second rail opening within a second isolation trench;

    a second dielectric cap on the second power rail within the second rail opening, the second dielectric cap being etch-selective to a side material of the second rail opening; and

    an opening formed by etching the second dielectric cap that is etch-selective to the side material of the second rail opening and resulting in the opening having a side aligned with the second power rail, the opening being filled with conductive material that connects the conductive pattern structure with the second power rail.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×