×

Method for manufacturing semiconductor device

  • US 10,586,869 B2
  • Filed: 07/20/2015
  • Issued: 03/10/2020
  • Est. Priority Date: 09/13/2010
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device comprising:

  • an oxide semiconductor film over a substrate;

    a pair of buffer layers on the oxide semiconductor film;

    a pair of electrodes electrically connected to the oxide semiconductor film;

    a gate insulating film over and in contact with a portion of a top surface of the oxide semiconductor film, a top surface of the pair of electrodes and a side surface of the pair of buffer layers; and

    a gate electrode over the gate insulating film,wherein each of the pair of buffer layers has a different taper angle between an inner side surface and an outer side surface, andwherein the buffer layers comprise a metal oxide.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×