Transient stabilized cascode biasing

• US 10,587,225 B2
• Filed: 07/24/2018
• Issued: 03/10/2020
• Est. Priority Date: 07/24/2018
• Status: Active Grant

• Current Assignee: pSemi Corporation (Murata Manufacturing Co Limited)
• Original Assignee: pSemi Corporation (Murata Manufacturing Co Limited)
• Inventors: Klaren, Jonathan James, Ranta, Tero Tapio
• Primary Examiner(s): Nguyen, Khanh V
• Application Number:
  US16/044,378
• Publication Number:
  US 20200036341A1
• Time in Patent Office: 595 Days
• Field of Search: 330277, 330296, 330311
• CPC Class Codes: H03F 1/0222 by using a signal derived from the input signal
• CPC Class Codes: H03F 1/0266 by using a signal derived from the input signal
• CPC Class Codes: H03F 1/223 with MOSFET's
• CPC Class Codes: H03F 1/302 in bipolar transistor amplifiers H03F1/303, H03F1/305, H03F1/307 take precedence
• CPC Class Codes: H03F 2200/18 the bias of the gate of a FET being controlled by a control signal

Abstract

A biasing circuit with high current drive capability for fast settling of a biasing voltage to a stacked cascode amplifier is presented. According to a first aspect, the biasing circuit uses transistors matched with transistors of the cascode amplifier to generate a boost current during a transition phase that changes the biasing voltage by charging or discharging a capacitor. The boost current is activated during the transition phase and deactivated when a steady-state condition is reached. According to a second aspect, the biasing circuit uses an operational amplifier in a feedback loop that forces a source node of a cascode transistor of a reference circuit, that is a scaled down replica version of the cascode amplifier, to be at a reference voltage. The high gain and high current capability of the operational amplifier, provided by isolating a high frequency signal processed by the cascode amplifier from the reference circuit, allow for a quick settling of the biasing voltage.

Claims

1. A circuit arrangement comprising:

a stacked cascode amplifier comprising an input transistor and one or more cascode transistors, the one or more cascode transistors comprising an output transistor, wherein the input transistor is configured to receive an RF signal and the output transistor is configured to output an amplified version of the RF signal;

a reference circuit that is a scaled down version of the stacked cascode amplifier, the reference circuit coupled to the stacked cascode amplifier via respective gate nodes; and

a biasing circuit configured to provide a biasing voltage to at least one gate node of a transistor of the one or more cascode transistors and a gate node of a respective transistor of the reference circuit,

wherein the biasing circuit comprises a feedback loop that senses a voltage at a source node of the respective transistor of the reference circuit and controls the biasing voltage so that a sensed voltage at said source node is equal to a reference voltage,

wherein the feedback loop comprises an operational amplifier comprising a positive input coupled to the reference voltage, a negative input coupled to the source node of the respective transistor of the reference circuit, and an output coupled to the at least one gate node, and

wherein the reference voltage is generated via a resistive voltage divider comprising two series connected resistors with configurable resistances.

2. The circuit arrangement according to claim 1, wherein a current through the resistive voltage divider is 1 μ

A or less.

3. The circuit arrangement according to claim 1, wherein the at least one gate node is charged or discharged based on respective charging or discharging of a capacitor that is coupled between said gate node and a reference ground by a current at the output of the operational amplifier.

4. The circuit arrangement according to claim 3, wherein a magnitude of the current at the output of the operational amplifier is independent from a magnitude of a current that generates the reference voltage.

5. The circuit arrangement according to claim 1, wherein coupling of the stacked cascode amplifier to the reference circuit is provided via respective series connected resistors that are configured to substantially isolate the reference circuit from the RF signal.

6. The circuit arrangement according to claim 5, wherein substantial isolation of the reference circuit from the RF signal allows for a higher gain of the feedback loop.

7. The circuit arrangement according to claim 1, wherein a scale of the reference circuit with respect to the stacked cascode amplifier is 1/20 or less.

8. The circuit arrangement according to claim 1, wherein the at least one gate node is a gate node of the output transistor.

9. The circuit arrangement according to claim 1, wherein the at least one gate node is a gate node of a transistor that is connected to the input transistor.

10. The circuit arrangement according to claim 1, wherein the at least one gate node is a gate node of a transistor that is not the output transistor and that is not connected to the input transistor.

11. The circuit arrangement according to claim 1, wherein:

the one or more cascode transistors comprises a plurality of cascode transistors,

the biasing circuit is further configured to provide an additional biasing voltage to a gate node of an additional transistor of the plurality of cascode transistors and a gate node of a respective additional transistor of the reference circuit,

wherein the biasing circuit further comprises an additional feedback loop that senses a voltage at a source node of the respective additional transistor of the reference circuit and controls the additional biasing voltage so that a sensed voltage at said source node is equal to an additional reference voltage.

12. The circuit arrangement according to claim 11, wherein the resistive voltage divider also generates the additional reference voltage.

13. The circuit arrangement according to claim 1, wherein the input transistor is coupled to a reference ground via a degeneration inductor.

14. The circuit arrangement according to claim 13, wherein the stacked cascode amplifier is a low noise amplifier (LNA) used in a receive path of an RF system.

15. The circuit arrangement according to claim 1, wherein the input transistor, the one or more cascode transistors, and respective transistors of the reference circuit are FET transistors.

16. The circuit arrangement according to claim 15, wherein the FET transistors are fabricated using one of:

a) silicon-on-insulator (SOI) technology, and b) silicon-on-sapphire technology (SOS).

17. An electronic module comprising the circuit arrangement of claim 1.

18. A method for biasing a stacked cascode amplifier, the method comprising:

providing a reference circuit that is a scaled down version of the stacked cascode amplifier;

coupling gate nodes of the stacked cascode amplifier to respective gate nodes of the reference circuit via respective resistors;

based on the coupling, isolating an RF signal processed by the stacked cascode amplifier from the reference circuit; and

controlling, via a feedback loop with higher gain, a biasing voltage to a gate node of a cascode transistor of the stacked cascode amplifier based on a voltage sensed at a source node of a respective transistor of the reference circuit,

wherein the higher gain is provided by the isolating,

wherein the feedback loop controls the biasing voltage so that the voltage sensed at said source node is equal to a reference voltage,

wherein the feedback loop comprises an operational amplifier comprising a positive input coupled to the reference voltage, a negative input coupled to the source node of the respective transistor of the reference circuit, and an output coupled to the at least one gate node, and

wherein the reference voltage is generated via a resistive voltage divider comprising two series connected resistors with configurable resistances.

19. A circuit arrangement comprising:

a stacked cascode amplifier comprising an input transistor and one or more cascode transistors, the one or more cascode transistors comprising an output transistor, wherein the input transistor is configured to receive an RF signal and the output transistor is configured to output an amplified version of the RF signal;

a reference circuit that is a scaled down version of the stacked cascode amplifier, the reference circuit coupled to the stacked cascode amplifier via respective gate nodes; and

a biasing circuit configured to provide a biasing voltage to at least one gate node of a transistor of the one or more cascode transistors and a gate node of a respective transistor of the reference circuit,

wherein;

the biasing circuit comprises a feedback loop that senses a voltage at a source node of the respective transistor of the reference circuit and controls the biasing voltage so that a sensed voltage at said source node is equal to a reference voltage,

the one or more cascode transistors comprises a plurality of cascode transistors,

the biasing circuit is further configured to provide an additional biasing voltage to a gate node of an additional transistor of the plurality of cascode transistors and a gate node of a respective additional transistor of the reference circuit, and

the biasing circuit further comprises an additional feedback loop that senses a voltage at a source node of the respective additional transistor of the reference circuit and controls the additional biasing voltage so that a sensed voltage at said source node is equal to an additional reference voltage.

20. The circuit arrangement according to claim 19, wherein the feedback loop comprises an operational amplifier comprising a positive input coupled to the reference voltage, a negative input coupled to the source node of the respective transistor of the reference circuit, and an output coupled to the at least one gate node.

21. The circuit arrangement according to claim 20, wherein the reference voltage is generated via a resistive voltage divider comprising two series connected resistors with configurable resistances.

22. The circuit arrangement according to claim 21, wherein a current through the resistive voltage divider is 1 μ

A or less.

23. The circuit arrangement according to claim 20, wherein the at least one gate node is charged or discharged based on respective charging or discharging of a capacitor that is coupled between said gate node and a reference ground by a current at the output of the operational amplifier.

24. The circuit arrangement according to claim 23, wherein a magnitude of the current at the output of the operational amplifier is independent from a magnitude of a current that generates the reference voltage.

25. The circuit arrangement according to claim 19, wherein coupling of the stacked cascode amplifier to the reference circuit is provided via respective series connected resistors that are configured to substantially isolate the reference circuit from the RF signal.

26. The circuit arrangement according to claim 25, wherein substantial isolation of the reference circuit from the RF signal allows for a higher gain of the feedback loop.

27. The circuit arrangement according to claim 19, wherein a scale of the reference circuit with respect to the stacked cascode amplifier is 1/20 or less.

28. The circuit arrangement according to claim 19, wherein the at least one gate node is a gate node of the output transistor.

29. The circuit arrangement according to claim 19, wherein the at least one gate node is a gate node of a transistor that is connected to the input transistor.

30. The circuit arrangement according to claim 19, wherein the at least one gate node is a gate node of a transistor that is not the output transistor and that is not connected to the input transistor.

31. The circuit arrangement according to claim 19, wherein the reference voltage and the additional reference voltage are generated via one resistive voltage divider comprising a plurality of series connected resistors with configurable resistances.

32. The circuit arrangement according to claim 19, wherein the input transistor is coupled to a reference ground via a degeneration inductor.

33. The circuit arrangement according to claim 32, wherein the stacked cascode amplifier is a low noise amplifier (LNA) used in a receive path of an RF system.

34. The circuit arrangement according to claim 19, wherein the input transistor, the one or more cascode transistors, and respective transistors of the reference circuit are FET transistors.

35. The circuit arrangement according to claim 34, wherein the FET transistors are fabricated using one of:

a) silicon-on-insulator (SOI) technology, and b) silicon-on-sapphire technology (SOS).

36. An electronic module comprising the circuit arrangement of claim 19.