Magnetic induction plasma source for semiconductor processes and equipment

• US 10,593,560 B2
• Filed: 03/01/2018
• Issued: 03/17/2020
• Est. Priority Date: 03/01/2018
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Cho, Tae Seung, Jung, Soonwook, Kim, Junghoon, Kobayashi, Satoru, Schatz, Kenneth D., Park, Soonam, Lubomirsky, Dmitry
• Primary Examiner(s): Mulero, Luz L Alejandro
• Application Number:
  US15/909,812
• Publication Number:
  US 20190272999A1
• Time in Patent Office: 747 Days
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01L 21/3105 After-treatment
• CPC Class Codes: H01L 21/32136 using plasmas
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H05H 1/46 using applied electromagnetic fields, e.g. high frequency or microwave energy H05H1/26 takes precedence
• CPC Class Codes: H05H 1/4645 Radiofrequency discharges
• CPC Class Codes: H05H 1/4652 using inductive coupling means, e.g. coils

Abstract

Exemplary magnetic induction plasma systems for generating plasma products are provided. The magnetic induction plasma system may include a first plasma source including a plurality of first sections and a plurality of second sections arranged in an alternating manner and fluidly coupled with each other such that at least a portion of plasma products generated inside the first plasma source may circulate through at least one of the plurality of first sections and at least one of the plurality of second sections inside the first plasma source. Each of the plurality of second sections may include a dielectric material. The system may further include a plurality of first magnetic elements each of which may define a closed loop. Each of the plurality of second sections may define a plurality of recesses for receiving one of the plurality of first magnetic elements therein.

Claims

1. A magnetic induction plasma system, comprising:

a first plasma source including a plurality of first sections and a plurality of second sections fluidly coupled with each other such that at least a portion of plasma products generated inside the first plasma source circulate through at least one of the plurality of first sections and at least one of the plurality of second sections inside the first plasma source, wherein each of the plurality of second sections comprises a dielectric material, wherein the plurality of first sections and the plurality of second sections are arranged in an alternating manner such that the plurality of first sections are electrically insulated from each other at least in part by the plurality of second sections;

a plurality of first magnetic elements, wherein each of the plurality of first magnetic elements defines a closed loop and is positioned around one of the plurality of second sections; and

wherein the first plasma source defines a first toroidal shape, the first toroidal shape having a first toroidal extension and a first toroidal axis perpendicular to the first toroidal extension, wherein each of the plurality of first sections includes a first dimension parallel to the first toroidal axis, wherein each of the plurality of second sections includes a second dimension parallel to the first toroidal axis, wherein the first dimension is greater than the second dimension such that the plurality of second sections defines a plurality of annular recesses, wherein each of the plurality of annular recesses is configured to receive one of the plurality of first magnetic elements such that the magnetic induction plasma system is integratable into a semiconductor processing chamber having a gas inlet assembly disposed upstream of the magnetic induction plasma system, wherein the plurality of first sections is configured to support a planar surface of the gas inlet assembly, and wherein the plurality of annular recesses is configured to allow the plurality of magnetic elements to be disposed below the planar surface of the gas inlet assembly without contacting the planar surface of the gas inlet assembly.

2. The magnetic induction plasma system of claim 1, wherein each of the plurality of first sections comprises a first opening and a second opening, wherein each of the plurality of first sections and the corresponding first and second openings define a flow passage parallel to the first toroidal axis, wherein the first opening of each of the plurality of first sections is configured to receive a precursor into the corresponding first section and generate the plasma products inside the first plasma source, wherein the second opening of each of the plurality of first sections provides access for the generated plasma products to flow from the corresponding first section.

3. The magnetic induction plasma system of claim 1, further comprising a plurality of first dielectric ring members each positioned at a top rim of one first section of the plurality of first sections and a plurality of second dielectric ring members each positioned at a bottom rim of one first section of the plurality of first sections such that the plurality of first sections are electrically insulated from each other when the magnetic induction plasma system is integrated into the semiconductor processing chamber and positioned between metal components of the semiconductor processing chamber along the first toroidal axis.

4. The magnetic induction plasma system of claim 3, wherein the semiconductor processing chamber further comprises a gas distribution assembly, wherein the gas distribution assembly is positioned downstream of the magnetic induction plasma system, wherein the plurality of first dielectric ring members defines a first planar supporting surface and is configured to support the planar surface of the gas inlet assembly, and wherein the plurality of second dielectric ring members defines a second planar supporting surface and is configured to be supported by a planar surface of the gas distribution assembly.

5. The magnetic induction plasma system of claim 1, wherein each of the plurality of first sections includes an arcuate tubular body.

6. The magnetic induction plasma system of claim 1, wherein each of the plurality of second sections comprises a pair of flanges configured at two opposite ends of each second section and configured to couple each second section with two adjacent first sections.

7. The magnetic induction plasma system of claim 1, wherein each of the plurality of first sections includes a first extension along the first toroidal extension, wherein each of the plurality of second sections includes a second extension along the first toroidal extension, a ratio of the first extension to the second extension is between about 10:

1 and about 2;

1 such that circulation of at least a portion of plasma products inside the first plasma source is facilitated.

8. The magnetic induction plasma system of claim 1, further comprising:

a second plasma source defining a second toroidal shape, the second toroidal shape having a second toroidal extension and a second toroidal axis perpendicular to the second toroidal extension, the second toroidal axis aligned with the first toroidal axis, wherein the second plasma source is positioned radially inward from the first plasma source, the second plasma source comprises a third section and a fourth section, at least one of the third section or the fourth section comprises a dielectric material; and

at least one second magnetic element defining a closed loop and positioned around at least one of the third section or the fourth section.

9. The magnetic induction plasma system of claim 8, wherein the at least one second magnetic element is positioned at an azimuthal angle different from an azimuthal angle of each of the plurality of first magnetic elements such that interference between an electric field generated by each of the plurality of first magnetic elements and an electric field generated by the at least one second magnetic element is reduced.

10. The magnetic induction plasma system of claim 8, wherein the first plasma source and the second plasma source are configured such that the plasma products exiting the first plasma source diffuses onto a first region of a substrate, wherein the first region defines a substantially annular shape, wherein the plasma products exiting the second plasma source diffuses onto a second region of the substrate, wherein the second region defines a substantially circular shape, and the first region and the second region overlap.

11. The magnetic induction plasma system of claim 8, further comprising:

a plurality of electrically coupled first coils each being configured around at least a portion of each of the plurality of first magnetic elements; and

a second coil being configured around at least a portion of the at least one second magnetic element, wherein the magnetic induction plasma system is driven by an LLC resonant half bridge circuit, wherein;

the LLC resonant half bridge circuit is configured to supply a first current to the plurality of electrically coupled first coils at a frequency that matches a frequency at which the LLC resonant half bridge circuit is configured to supply a second current to the second coil.

12. The magnetic induction plasma system of claim 11, wherein the LLC resonant half bridge circuit is configured to supply the first current and the second current at a frequency between about 100 kHz and about 20 MHz.

13. The magnetic induction plasma system of claim 11, wherein the LLC resonant half bridge circuit is configured to supply a first power to the plurality of electrically coupled first coils and to supply a second power to the second coil, the first power being greater than the second power.

14. A semiconductor processing chamber, comprising:

a magnetic induction plasma system, wherein the magnetic induction plasma system comprises;

a first plasma source having a first toroidal shape having a first toroidal axis, the first plasma source defining a first annular recess of the first toroidal shape; and

a first magnetic element forming a closed loop and positioned around a portion of the first plasma source, at least a portion of the first magnetic element being received within the first annular recess, wherein;

the first plasma source includes a first wall and a second wall at least in part defining a flow passage parallel to the first toroidal axis, wherein a top rim of the first wall and a top rim of the second wall at least in part define a first opening configured to receive an unexcited precursor into the first plasma source configured to generate plasma products therefrom, wherein a bottom rim of the first wall and a bottom rim of the second wall further at least in part define a second opening providing access for the generated plasma products to flow from the first plasma source, wherein the first and second walls define a width of the first plasma source along a radial direction of the first toroidal shape, wherein the top rims of the first and second walls define a width of the first opening along the radial direction of the first toroidal shape, wherein the bottom rims of the first and second walls define a width of the second opening along the radial direction of the first toroidal shape, and wherein the first opening, the second opening, and the first plasma source are characterized by the same width along the radial direction of the first toroidal shape.

15. The semiconductor processing chamber of claim 14, wherein the magnetic induction plasma system further comprises:

a second plasma source having a second toroidal shape and coaxially aligned with the first plasma source, the second plasma source positioned radially inward from the first plasma source, the second plasma source defining a second annular recess of the second toroidal shape; and

a second magnetic element forming a closed loop and positioned around a portion of the second plasma source, at least a portion of the second magnetic element being received within the second annular recess, wherein;

the second plasma source includes a third opening configured to receive the unexcited precursor into the second plasma source configured to generate plasma products therefrom and a fourth opening providing access for the generated plasma products to flow from the second plasma source, wherein the third opening, the fourth opening, and the second plasma source are characterized by the same width measured along a radial direction of the second toroidal shape.

16. The semiconductor processing chamber of claim 15, wherein the first magnetic element is positioned at a first azimuthal angle, and the second magnetic element is positioned at a second azimuthal angle different from the first azimuthal angle.

17. The semiconductor processing chamber of claim 14, further comprises a gas inlet assembly having a planar surface and disposed upstream of the magnetic induction plasma system, wherein the magnetic induction plasma system is configured to support the planar surface of the gas inlet assembly.

18. The semiconductor processing chamber of claim 17, wherein the gas inlet assembly comprises a first gas delivery member and a second gas delivery member, wherein the second gas delivery member defines the planar surface of the gas inlet assembly to be supported by the magnetic induction plasma system, wherein the first gas delivery member comprises a first flange surrounding a protruding portion of the first gas delivery member, wherein the second gas delivery member comprises a second flange surrounding a recess defined by the second gas delivery member, wherein the recess is configured to receive the protruding portion, wherein the second flange is configured to support the first flange to define a gas supply region between the first gas delivery member and the second gas delivery member when the protruding portion is received in the recess, and wherein the gas supply region provides fluid access to the first plasma source for the unexcited precursor.

19. The semiconductor processing chamber of claim 14, further comprises a gas distribution assembly having a planar surface and disposed downstream of the magnetic induction plasma system, wherein the magnetic induction plasma system is configured to be supported by the planar surface of the gas distribution assembly.

20. The semiconductor processing chamber of claim 19, further comprises a dielectric ring member positioned at the bottom rims of the first and second walls and contacting the planar surface of the gas distribution assembly.