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Semiconductor structures

  • US 10,593,595 B2
  • Filed: 08/31/2018
  • Issued: 03/17/2020
  • Est. Priority Date: 08/09/2016
  • Status: Active Grant
First Claim
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1. A semiconductor structure, comprising:

  • a semiconductor substrate including fin structures, the fin structures including a plurality of first fin structures having a first width and a plurality of second fin structures, wherein;

    the second fin structure has a second width at a lower portion and a third width at an upper portion, andthe second width is greater than each of the first width and the third width; and

    a first isolation film formed on the semiconductor substrate and between adjacent fin structures, wherein;

    the first isolation film has a top surface lower than the fin structures, andthe upper portion of each second fin structure having the third width passes through the top surface of the first isolation film; and

    a by-product layer formed on a top surface of the lower portion of the second fin structures, wherein the by-product layer has a top surface coplanar with the top surface of the first isolation film and a side surface coplanar with a side surface of the lower portion of the second fin structures.

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