Field effect transistor (FET) structure with integrated gate connected diodes

• US 10,593,665 B2
• Filed: 09/19/2018
• Issued: 03/17/2020
• Est. Priority Date: 11/20/2015
• Status: Active Grant

• Current Assignee: Raytheon Company (Rtx Corporation)
• Original Assignee: Raytheon Company (Rtx Corporation)
• Inventors: Bettencourt, John P., Mallavarpu, Raghuveer
• Primary Examiner(s): Mazumder, Didarul A
• Assistant Examiner(s): Haider, Wasiul
• Application Number:
  US16/135,606
• Publication Number:
  US 20190019790A1
• Time in Patent Office: 545 Days
• CPC Class Codes: H01L 21/8232 Field-effect technology
• CPC Class Codes: H01L 21/823437 with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
• CPC Class Codes: H01L 21/823475 interconnection or wiring or contact manufacturing related aspects
• CPC Class Codes: H01L 21/8252 the substrate being a semiconductor, using III-V technology H01L21/8258 takes precedence
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/0891 of field-effect transistors with Schottky gate
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/47 Schottky barrier electrodes H01L29/435 takes precedence
• CPC Class Codes: H01L 29/7787 with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
• CPC Class Codes: H01L 29/812 with a Schottky gate H01L29/7725, H01L29/775, H01L29/778, H01L29/806 take precedence; with Schottky contact on top of heterojunction gate H01L29/802
• CPC Class Codes: H01L 29/872 Schottky diodes
• CPC Class Codes: H03F 1/3205 in field-effect transistor amplifiers
• CPC Class Codes: H03F 1/3276 using the nonlinearity inherent to components, e.g. a diode
• CPC Class Codes: H03F 1/56 Modifications of input or output impedances, not otherwise provided for
• CPC Class Codes: H03F 2200/126 A diode being coupled in a feedback path of an amplifier stage, e.g. active or passive diode
• CPC Class Codes: H03F 2200/222 A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
• CPC Class Codes: H03F 2200/387 A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
• CPC Class Codes: H03F 2200/451 the amplifier being a radio frequency amplifier
• CPC Class Codes: H03F 2200/75 : the amplifier stage being a common source configuration MOSFET
• CPC Class Codes: H03F 3/195 : in integrated circuits
• CPC Class Codes: H03F 3/213 : in integrated circuits

Abstract

A structure having: a plurality of field effect transistors (FETs) connected between a common input and a common output, each one of the field effect transistors comprises: a source region, a drain region, and a gate electrode for controlling carriers through a channel region of a transistor region of the structure between the source region and the drain region; a plurality of diodes, each one of the diodes being associated with a corresponding one of the plurality of FETs, each one of the diodes having an electrode in Schottky contact with a diode region of the corresponding one of the FETs. The gate electrode and the diode electrode extend along parallel lines. The source region, the drain region, the channel region, and a diode region having therein the diode are disposed along a common line.

Claims

1. A structure, comprising:

a plurality of field effect transistor cells, each one of the cells comprising;

a source region, a drain region, and a gate electrode for controlling carriers through a channel region of a semiconductor region of the structure between the source region and the drain region;

wherein the gate electrodes of the cells are parallel one to another; and

wherein the gate electrodes have ends thereof connected to a common gate manifold contact pad;

a diode having;

an electrode in ohmic contact with a different portion of the semiconductor region to provide a cathode for the diode, the diode region being disposed between the drain region of one of the cells and the drain region of an adjacent one of the cells, said cathode electrode being electrically connected to the drain region of said one of the cells and the drain region of an said adjacent one of the cells through portions of the semiconductor region between said drain region of one of the cells and said drain region of an adjacent one of the cells; and

a Schottky electrode providing an anode for the diode; and

wherein one of the cathode and anode being connected to the common gate manifold contact pad; and

wherein the source region, the drain region, the channel region, and the diode region are disposed along a common line.

2. The structure recited in claim 1 wherein the gate electrode and the diode electrode extend along parallel lines and wherein the common line is perpendicular to the parallel lines.

3. The structure recited in claim 2 wherein the Schottky contact has a portion of the semiconductor adjacent to the drain region and an anode connected to the gate.

4. The structure recited in claim 3 wherein the gate has a predetermined width and the diode cathode has a predetermined width greater than the predetermined width of the gate.

5. The structure recited in claim 3 wherein the gate has a predetermined width and the diode cathode has a predetermined width at least an order of magnitude greater than the predetermined width of the gate.

6. The semiconductor structure recited in claim 1 wherein the second electrode is disposed along a line parallel to the gate electrodes.