Display device and method for manufacturing display device
First Claim
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1. A display device comprising:
- a flexible substrate;
a first gate electrode over the flexible substrate;
a first insulating film over the first gate electrode;
an oxide semiconductor film over the first insulating film, the oxide semiconductor film overlapping with the first gate electrode;
a source electrode or a drain electrode in contact with a top surface of the oxide semiconductor film;
a second insulating film and a third insulating film over the oxide semiconductor film;
a second gate electrode over the third insulating film, the second gate electrode overlapping with the oxide semiconductor film; and
a capacitor,wherein the capacitor comprises a first electrode, a second electrode over the first electrode, and a fourth insulating film between the first electrode and the second electrode,wherein the first electrode comprises a first region in contact with the fourth insulating film,wherein the first electrode is provided on a same surface as the oxide semiconductor film,wherein the first electrode comprises a same material as the oxide semiconductor film,wherein the fourth insulating film comprises a same material as the third insulating film, andwherein the second electrode comprises a same material as the second gate electrode.
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Abstract
A highly flexible display device and a method for manufacturing the display device are provided. A transistor including a light-transmitting semiconductor film, a capacitor including a first electrode, a second electrode, and a dielectric film between the first electrode and the second electrode, and a first insulating film covering the semiconductor film are formed over a flexible substrate. The capacitor includes a region where the first electrode and the dielectric film are in contact with each other, and the first insulating film does not cover the region.
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Citations
20 Claims
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1. A display device comprising:
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a flexible substrate; a first gate electrode over the flexible substrate; a first insulating film over the first gate electrode; an oxide semiconductor film over the first insulating film, the oxide semiconductor film overlapping with the first gate electrode; a source electrode or a drain electrode in contact with a top surface of the oxide semiconductor film; a second insulating film and a third insulating film over the oxide semiconductor film; a second gate electrode over the third insulating film, the second gate electrode overlapping with the oxide semiconductor film; and a capacitor, wherein the capacitor comprises a first electrode, a second electrode over the first electrode, and a fourth insulating film between the first electrode and the second electrode, wherein the first electrode comprises a first region in contact with the fourth insulating film, wherein the first electrode is provided on a same surface as the oxide semiconductor film, wherein the first electrode comprises a same material as the oxide semiconductor film, wherein the fourth insulating film comprises a same material as the third insulating film, and wherein the second electrode comprises a same material as the second gate electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A display device comprising:
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a flexible substrate; a first gate electrode over the flexible substrate; a first insulating film over the first gate electrode; an oxide semiconductor film over the first insulating film, the oxide semiconductor film overlapping with the first gate electrode; a source electrode or a drain electrode in contact with a top surface of the oxide semiconductor film; a second insulating film and a third insulating film over the oxide semiconductor film; a second gate electrode over the third insulating film, the second gate electrode overlapping with the oxide semiconductor film; a light-emitting element electrically connected with the source electrode or the drain electrode; and a capacitor, wherein the capacitor comprises a first electrode, a second electrode over the first electrode, and a fourth insulating film between the first electrode and the second electrode, wherein the first electrode comprises a first region in contact with the fourth insulating film, wherein the first electrode is provided on a same surface as the oxide semiconductor film, wherein the first electrode comprises a same material as the oxide semiconductor film, wherein the fourth insulating film comprises a same material as the third insulating film, wherein the second electrode comprises a same material as the second gate electrode, and wherein the light-emitting element comprises a region overlapping with the capacitor. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A display device comprising:
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a transistor and a capacitor, wherein the transistor comprises; a first gate electrode; a first insulating film over the first gate electrode; an oxide semiconductor film over the first insulating film, the oxide semiconductor film overlapping with the first gate electrode; a source electrode or a drain electrode in contact with a top surface of the oxide semiconductor film; a second insulating film and a third insulating film over the oxide semiconductor film; and a second gate electrode over the third insulating film, the second gate electrode overlapping with the oxide semiconductor film, wherein the capacitor comprises; a first electrode over the first insulating film; a second electrode over the first electrode; and a fourth insulating film between the first electrode and the second electrode, wherein the first electrode comprises a first region in contact with the fourth insulating film, wherein the first electrode is provided on a same surface as the oxide semiconductor film, wherein the first electrode comprises a same material as the oxide semiconductor film, wherein the fourth insulating film comprises a same material as the third insulating film, wherein the second electrode comprises a same material as the second gate electrode, and wherein an end portion of the second gate electrode is located on an outer side of an end portion of the oxide semiconductor film in a channel width direction. - View Dependent Claims (18, 19, 20)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamazaki, Shunpei
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Primary Examiner(s)Nguyen, Dao H
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Application NumberUS16/244,421Publication NumberTime in Patent Office432 DaysField of Search257 40, 257 43, 257 59, 257 66, 257E29063, 257E29068, 257E33053, 257E33063, 257E51018, 438 23, 438104, 438158US Class CurrentCPC Class CodesH01L 27/1218 with a particular compositi...H01L 27/1225 with semiconductor material...H01L 27/1255 integrated with passive dev...H01L 27/1266 the substrate on which the ...H01L 29/78603 characterised by the insula...H01L 29/7869 having a semiconductor body...Y02E 10/549 Organic PV cells
