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Method for forming trench semiconductor device having Schottky barrier structure

  • US 10,593,760 B2
  • Filed: 08/02/2018
  • Issued: 03/17/2020
  • Est. Priority Date: 08/02/2018
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor device, comprising:

  • providing a region of semiconductor material comprising a first major surface and a second major surface opposite to the first major surface;

    providing a trench structure comprising;

    a trench extending into the region of semiconductor material from the first major surface; and

    a conductive material disposed within the trench and separated from the region of semiconductor material by a dielectric region; and

    providing a Schottky contact region disposed adjacent to the first major surface and adjacent to the trench structure, wherein providing the Schottky contact region comprises;

    forming a first layer of material disposed adjacent to the first major surface, the first layer of material comprising titanium and having a first thickness;

    forming a second layer of material disposed adjacent to the first layer of material, the second layer of material comprising nickel-platinum and having a second thickness;

    exposing the first layer of material and the second layer of material to a temperature in a range from about 650 degrees Celsius through about 700 degrees Celsius; and

    after the step of exposing, removing any unreacted portions of the first layer of material and the second layer of material.

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