Gate-all-around fin device
First Claim
1. A method comprising:
- forming a first doped fin of a first conductivity type located over a first portion of a doped well;
forming a second doped fin of a second conductivity type located over a second portion of the doped well;
forming a gate structure located adjacent to the first doped fin over the doped well;
forming a shallow trench isolation (STI) region in the doped well between the first portion and the second portion of the doped well; and
forming a source contact located over the first doped fin,wherein the source contact includes alternating p regions and n regions.
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Accused Products
Abstract
A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.
60 Citations
11 Claims
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1. A method comprising:
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forming a first doped fin of a first conductivity type located over a first portion of a doped well; forming a second doped fin of a second conductivity type located over a second portion of the doped well; forming a gate structure located adjacent to the first doped fin over the doped well; forming a shallow trench isolation (STI) region in the doped well between the first portion and the second portion of the doped well; and forming a source contact located over the first doped fin, wherein the source contact includes alternating p regions and n regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification