Logic circuit and semiconductor device
First Claim
1. A display device comprising:
- a transistor over a substrate;
a light-emitting element electrically connected to the transistor; and
a color filter layer,wherein the color filter layer is located over the transistor and under the light-emitting element,wherein a channel formation region of the transistor comprises an oxide semiconductor,wherein a carrier density of the oxide semiconductor is smaller than or equal to 5×
1014/cm3, andwherein an off-state current of the transistor is smaller than or equal to 1×
10−
16 A/μ
m at a measurement temperature of 120°
C. and a drain voltage of 6 V.
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Accused Products
Abstract
A logic circuit includes a thin film transistor having a channel formation region formed using an oxide semiconductor, and a capacitor having terminals one of which is brought into a floating state by turning off the thin film transistor. The oxide semiconductor has a hydrogen concentration of 5×1019 (atoms/cm3) or less and thus substantially serves as an insulator in a state where an electric field is not generated. Therefore, off-state current of a thin film transistor can be reduced, leadind to suppressing the leakage of electric charge stored in a capacitor, through the thin film transistor. Accordingly, a malfunction of the logic circuit can be prevented. Further, the excessive amount of current which flows in the logic circuit can be reduced through the reduction of off-state current of the thin film transistor, resulting in low power consumption of the logic circuit.
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Citations
16 Claims
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1. A display device comprising:
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a transistor over a substrate; a light-emitting element electrically connected to the transistor; and a color filter layer, wherein the color filter layer is located over the transistor and under the light-emitting element, wherein a channel formation region of the transistor comprises an oxide semiconductor, wherein a carrier density of the oxide semiconductor is smaller than or equal to 5×
1014/cm3, andwherein an off-state current of the transistor is smaller than or equal to 1×
10−
16 A/μ
m at a measurement temperature of 120°
C. and a drain voltage of 6 V. - View Dependent Claims (2, 3, 4, 5)
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6. A display device comprising:
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a transistor over a substrate; a light-emitting element electrically connected to the transistor; and a color filter layer, wherein the color filter layer is located over the transistor and under the light-emitting element, wherein a channel formation region of the transistor comprises an oxide semiconductor, wherein a hydrogen concentration of the oxide semiconductor is smaller than or equal to 5×
1019/cm3, andwherein an off-state current of the transistor is smaller than or equal to 1×
10−
16 A/μ
m at a measurement temperature of 120°
C. and a drain voltage of 6 V. - View Dependent Claims (7, 8, 9, 10)
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11. A display device comprising:
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a transistor over a substrate; a light-emitting element electrically connected to the transistor; and a color filter layer, wherein the color filter layer is located over the transistor and under the light-emitting element, wherein a channel formation region of the transistor comprises an oxide semiconductor, and wherein an off-state current of the transistor is smaller than or equal to 1×
10−
13 A when a voltage between source and drain of the transistor is 10 V. - View Dependent Claims (12, 13, 14, 15, 16)
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Specification