Semiconductor light emitting device
First Claim
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1. A semiconductor light emitting diode comprising:
- a substrate;
a stack of GaN based semiconductor layers disposed on or above the substrate, the semiconductor layers and the substrate being made of different materials, the stack of GaN based semiconductor layers comprising an n-type GaN based semiconductor layer, a light emitting layer disposed on or above the n-type GaN based semiconductor layer, and a p-type GaN based semiconductor layer disposed on or above the light emitting layer;
an ohmic electrode disposed on or above the p-type GaN based semiconductor layer; and
an n electrode disposed on or above the n-type GaN based semiconductor layer,wherein the diode is configured such that light generated in the GaN based semiconductor layers is released through the ohmic electrode or the substrate,in plan view of the stack of GaN based semiconductor layers, the n electrode is disposed at a portion of the n-type GaN based semiconductor layer exposed through other layers of the stack of GaN based semiconductor layers and, and in the plan view of the stack of GaN based semiconductor layers, the n electrode is disposed inside the p-type GaN based semiconductor layer that remains on the substrate,the substrate comprises protrusions that are disposed on a surface of the substrate and made of a same material as the substrate, the protrusions being configured to scatter or diffract the generated light and having a two-dimensional pattern of a repeating set of protrusions, andin a sectional view of the substrate, side surfaces of the protrusions incline, and an inclination angle of the side surfaces from the surface of the substrate is more than 120 degrees and not more than 150 degrees.
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Abstract
A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.
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Citations
18 Claims
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1. A semiconductor light emitting diode comprising:
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a substrate; a stack of GaN based semiconductor layers disposed on or above the substrate, the semiconductor layers and the substrate being made of different materials, the stack of GaN based semiconductor layers comprising an n-type GaN based semiconductor layer, a light emitting layer disposed on or above the n-type GaN based semiconductor layer, and a p-type GaN based semiconductor layer disposed on or above the light emitting layer; an ohmic electrode disposed on or above the p-type GaN based semiconductor layer; and an n electrode disposed on or above the n-type GaN based semiconductor layer, wherein the diode is configured such that light generated in the GaN based semiconductor layers is released through the ohmic electrode or the substrate, in plan view of the stack of GaN based semiconductor layers, the n electrode is disposed at a portion of the n-type GaN based semiconductor layer exposed through other layers of the stack of GaN based semiconductor layers and, and in the plan view of the stack of GaN based semiconductor layers, the n electrode is disposed inside the p-type GaN based semiconductor layer that remains on the substrate, the substrate comprises protrusions that are disposed on a surface of the substrate and made of a same material as the substrate, the protrusions being configured to scatter or diffract the generated light and having a two-dimensional pattern of a repeating set of protrusions, and in a sectional view of the substrate, side surfaces of the protrusions incline, and an inclination angle of the side surfaces from the surface of the substrate is more than 120 degrees and not more than 150 degrees. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor light emitting diode comprising:
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a substrate; a stack of GaN based semiconductor layers disposed on or above the substrate, the semiconductor layers and the substrate being made of different materials, the stack of GaN based semiconductor layers comprising an n-type GaN based semiconductor layer, a light emitting layer disposed on or above the n-type GaN based semiconductor layer, and a p-type GaN based semiconductor layer disposed on or above the light emitting layer; an ohmic electrode disposed on or above the p-type GaN based semiconductor layer; and an n electrode disposed on or above the n-type GaN based semiconductor layer, wherein the diode is configured such that light generated in the GaN based semiconductor layers is released through the ohmic electrode or the substrate, in plan view of the stack of GaN based semiconductor layers, peripheral portions of the n-type GaN based semiconductor layer, the light emitting layer and the p-type GaN based semiconductor layer have a same shape, the substrate comprises protrusions that are disposed on a surface of the substrate and made of a same material as the substrate, the protrusions being configured to scatter or diffract the generated light and having a two-dimensional pattern of a repeating set of protrusions, and in a sectional view of the substrate, side surfaces of the protrusions incline, and an inclination angle of the side surfaces from the surface of the substrate is more than 120 degrees and not more than 150 degrees. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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Specification