Semiconductor device
First Claim
1. A semiconductor device comprising:
- a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer;
a first electrode contacts the first conductive semiconductor layer;
a second electrode contacts the second conductive semiconductor layer;
a first cover electrode disposed on the first electrode;
a first insulation layer disposed on the light emitting structure; and
a second insulation layer disposed on the first insulation layer,wherein a portion of the first cover electrode is disposed between the first insulation layer and the second insulation layer, andwherein the first electrode includes a recess on the top surface thereof.
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Accused Products
Abstract
The embodiment discloses a semiconductor device which includes: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a first cover electrode disposed on the first electrode; and an insulation layer disposed between the first electrode and the second electrode, wherein the insulation layer comprises a first insulation portion disposed between the first conductive semiconductor layer and the first cover electrode, and a second insulation portion disposed on the first cover electrode, wherein the first cover electrode comprises a first protrusion portion disposed between an upper surface of the first insulation portion and a lower surface of the second insulation portion.
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Citations
19 Claims
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1. A semiconductor device comprising:
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a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer; a first electrode contacts the first conductive semiconductor layer; a second electrode contacts the second conductive semiconductor layer; a first cover electrode disposed on the first electrode; a first insulation layer disposed on the light emitting structure; and a second insulation layer disposed on the first insulation layer, wherein a portion of the first cover electrode is disposed between the first insulation layer and the second insulation layer, and wherein the first electrode includes a recess on the top surface thereof. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A light emitting device comprising:
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a substrate; a light emitting structure disposed on the substrate, light emitting structure including a first conductivity type semiconductor layer, and a light emitting member disposed on the first conductivity type semiconductor layer; a first electrode that contacts the first conductivity type semiconductor layer; a second electrode that contacts the light emitting member, wherein the light emitting member includes a second conductivity type semiconductor layer and an active layer, wherein the active layer emits a light including a peak wavelength in a range 100 nm to 280 nm, and wherein a ratio of a perimeter of a top surface of the light emitting member and an area of the top surface of the light emitting member is in a range of 0.02 μ
m−
1 to 0.05 μ
m−
1. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification