Semiconductor device

• US 10,593,838 B2
• Filed: 08/10/2018
• Issued: 03/17/2020
• Est. Priority Date: 08/14/2017
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Sung, Youn Joon, Park, Jin Soo, Choi, Rak Jun
• Primary Examiner(s): Soward, Ida M
• Application Number:
  US16/100,785
• Publication Number:
  US 20190051797A1
• Time in Patent Office: 585 Days
• CPC Class Codes: H01L 31/03046 including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/325 characterised by the doping materials
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

The embodiment discloses a semiconductor device which includes: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a first cover electrode disposed on the first electrode; and an insulation layer disposed between the first electrode and the second electrode, wherein the insulation layer comprises a first insulation portion disposed between the first conductive semiconductor layer and the first cover electrode, and a second insulation portion disposed on the first cover electrode, wherein the first cover electrode comprises a first protrusion portion disposed between an upper surface of the first insulation portion and a lower surface of the second insulation portion.

Claims

1. A semiconductor device comprising:

a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer;

a first electrode contacts the first conductive semiconductor layer;

a second electrode contacts the second conductive semiconductor layer;

a first cover electrode disposed on the first electrode;

a first insulation layer disposed on the light emitting structure; and

a second insulation layer disposed on the first insulation layer,

wherein a portion of the first cover electrode is disposed between the first insulation layer and the second insulation layer, and

wherein the first electrode includes a recess on the top surface thereof.

2. The semiconductor device of claim 1, wherein the first insulation layer comprises a first insulation portion disposed between the first conductive semiconductor layer and the first cover electrode, and a second insulation portion disposed on the first cover electrode, and

wherein a first space region is disposed between the first insulation portion and the first electrode.

3. The semiconductor device of claim 2, wherein a width in which the first insulation portion overlaps with the first cover electrode in a vertical direction is larger than a width of the first space region.

4. The semiconductor device of claim 2, wherein the first cover electrode comprises a second uneven portion extending to the first space region and contacting to the first conductive semiconductor layer.

5. The semiconductor device of claim 2, wherein a width in which the second insulation portion overlaps with the first cover electrode in a vertical direction is larger than a width in which the first insulation portion overlaps with the first cover electrode in the vertical direction.

6. The semiconductor device of claim 5, wherein the second insulation portion overlaps the first electrode in the vertical direction.

7. The semiconductor device of claim 2, further comprising a second cover electrode disposed on the second electrode,

wherein the first insulation layer comprises a third insulation portion disposed between the second conductive semiconductor layer and the second cover electrode, and the second insulation layer comprises a fourth insulation portion disposed on the second cover electrode.

8. The semiconductor device of claim 7, further comprising a second space region disposed between the third insulation portion and the second electrode,

wherein the second cover electrode extends to the second space region and contacts to the second conductive semiconductor layer.

9. The semiconductor device of claim 7, wherein the light emitting structure comprises a first region in which the active layer and the second conductive semiconductor layer are disposed on the first conductive semiconductor layer, and a second region in which the first conductive semiconductor layer is exposed,

wherein the insulation layer is disposed on an upper surface of the first conductive semiconductor layer, a side surface of the active layer, a side surface of second conductive semiconductor layer, and an upper surface of the second conductive semiconductor layer.

10. The semiconductor device of claim 9, wherein the first insulation layer comprises a recess disposed between the first electrode and the second electrode.

11. The semiconductor device of claim 9, wherein a ratio (P11/P12) of a maximum perimeter (P11) of the first region to a maximum area (P12) of the first region is in a range of 0.02 μ

m<sup>−

1</sup> to 0.05 μ

m<sup>−

1</sup>.

12. The semiconductor device of claim 11, wherein the second cover electrode comprises a plurality of second branch electrodes disposed on the first region, and a second connection electrode connecting the plurality of second branch electrodes.

13. The semiconductor device of claim 1, wherein the first cover electrode comprises a first uneven portion disposed in the first groove.

14. A light emitting device comprising:

a substrate;

a light emitting structure disposed on the substrate, light emitting structure including a first conductivity type semiconductor layer, and a light emitting member disposed on the first conductivity type semiconductor layer;

a first electrode that contacts the first conductivity type semiconductor layer;

a second electrode that contacts the light emitting member,

wherein the light emitting member includes a second conductivity type semiconductor layer and an active layer,

wherein the active layer emits a light including a peak wavelength in a range 100 nm to 280 nm, and

wherein a ratio of a perimeter of a top surface of the light emitting member and an area of the top surface of the light emitting member is in a range of 0.02 μ

m<sup>−

1</sup> to 0.05 μ

m<sup>−

1</sup>.

15. The light emitting device of claim 14,

wherein a ratio of an area of the second electrode to an area of the first electrode is in a range of 1:

0.5 to 1;

0.7.

16. The light emitting device of claim 15, wherein the first electrode includes a first connection electrode and a plurality of first branch electrodes,

wherein the first connection electrode extends in a first direction,

wherein the plurality of first branch electrode extends from the first connection electrode in a second direction, and

wherein the first direction is perpendicular to the second direction.

17. The light emitting device of claim 16, wherein the second electrode includes a plurality of second branch electrodes and a second connection electrode, and

wherein the plurality of second branch electrode extends from the second connection electrode in the second direction.

18. The light emitting device of claim 16, wherein a width of first branch electrode in the first direction is smaller than a width of second branch electrode in the first direction.

19. The light emitting device of claim 18, wherein a ratio of the width of first branch electrode and the width of second branch electrode is in a range of 1:

2 to 1;

4, and

wherein a ratio of a width of the first connection electrode in the second direction and a width of the second connection electrode is in a range of 1;

1.1 to 1;

1.5.