Integrated semiconductor device including an electrically insulative substrate under an electrically conductive or semiconductive heat spreader and phase-change material (PCM) radio frequency (RF) switches

• US 10,593,876 B2
• Filed: 08/07/2019
• Issued: 03/17/2020
• Est. Priority Date: 08/14/2018
• Status: Active Grant

• Current Assignee: Newport Fab, LLC (Tower Semiconductor Limited)
• Original Assignee: Newport Fab, LLC (Tower Semiconductor Limited)
• Inventors: Howard, David J., El-Hinnawy, Nabil, Slovin, Gregory P., Rose, Jefferson E.
• Primary Examiner(s): Bernstein, Allison
• Application Number:
  US16/534,328
• Publication Number:
  US 20200058866A1
• Time in Patent Office: 223 Days
• CPC Class Codes: H10B 63/10 Phase change RAM [PCRAM, PRAM] devices
• CPC Class Codes: H10N 70/231 based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
• CPC Class Codes: H10N 70/823 adapted for essentially horizontal current flow, e.g. bridge type devices
• CPC Class Codes: H10N 70/861 Thermal details
• CPC Class Codes: H10N 70/8613 Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel
• CPC Class Codes: H10N 70/8616 Thermal insulation means
• CPC Class Codes: H10N 70/8825 Selenides, e.g. GeSe
• CPC Class Codes: H10N 70/8828 Tellurides, e.g. GeSbTe

Abstract

A semiconductor device includes a substrate, an integrated passive device (IPD), and a phase-change material (PCM) radio frequency (RF) switch. The PCM RF switch includes a heating element, a PCM situated over the heating element, and PCM contacts situated over passive segments of the PCM. The heating element extends transverse to the PCM, with a heater line underlying an active segment of the PCM. The PCM RF switch is situated over a heat spreader that is situated over the substrate. The heat spreader and/or the substrate dissipate heat generated by the heating element and reduce RF noise coupling between the PCM RF switch and the IPD. An electrically insulating layer can be situated between the heat spreader and the substrate. In another approach, the PCM RF switch is situated over an RF isolation region that allows the substrate to dissipate heat and that reduces RF noise coupling.

Claims

1. A semiconductor device including an electrically insulative substrate, said semiconductor device further comprising:

at least one integrated passive device (IPD);

a phase-change material (PCM) radio frequency (RF) switch comprising;

a heating element;

a PCM situated over said heating element;

PCM contacts situated over passive segments of said PCM;

said heating element extending transverse to said PCM, a heater line of said heating element approximately underlying an active segment of said PCM;

said at least one IPD situated adjacent to or above said PCM RF switch in said semiconductor device;

said PCM RF switch being situated over an electrically conductive or semiconductive heat spreader, said electrically conductive or semiconductive heat spreader dissipating heat generated by said heating element, wherein said electrically conductive or semiconductive heat spreader is situated over said electrically insulative substrate;

said electrically insulative substrate reducing RF noise coupling between said PCM RF switch and said at least one IPD.

2. The semiconductor device of claim 1, wherein said at least one IPD is selected from the group consisting of a resistor, a capacitor, an inductor, and a fuse.

3. The semiconductor device of claim 1, wherein said electrically conductive or semiconductive heat spreader comprises material selected from the group consisting of silicon (Si) and silicon carbide (Si_XC_Y).

4. The semiconductor device of claim 1, wherein said electrically insulative substrate comprises material selected from the group consisting of glass, aluminum nitride (Al_XN_Y), aluminum oxide (Al_XO_Y), beryllium oxide (Be_XO_Y), diamond, and diamond-like carbon.

5. The semiconductor device of claim 1, wherein said PCM comprises material selected from the group consisting of germanium telluride (Ge_XTe_Y), germanium antimony telluride (Ge_XSb_YTe_Z), germanium selenide (Ge_XSe_Y), and any other chalcogenide.

6. The semiconductor device of claim 1, wherein said heater line comprises material selected from the group consisting of tungsten (W), molybdenum (Mo), titanium (Ti), titanium nitride (TiN), titanium tungsten (TiW), tantalum (Ta), tantalum nitride (TaN), nickel chromium (NiCr), and nickel chromium silicon (NiCrSi).

7. A semiconductor device including an electrically insulative substrate, said semiconductor device further comprising:

at least one integrated passive device (IPD);

a phase-change material (PCM) radio frequency (RF) switch comprising;

a heating element;

a PCM situated over said heating element;

a heater line of said heating element approximately underlying said PCM;

said at least one IPD situated adjacent to or above said PCM RF switch in said semiconductor device;

said PCM RF switch being situated over an electrically conductive or semiconductive heat spreader, said electrically conductive or semiconductive heat spreader dissipating heat generated by said heating element, wherein said electrically conductive or semiconductive heat spreader is situated over said electrically insulative substrate;

said electrically insulative substrate reducing RF noise coupling between said PCM RF switch and said at least one IPD.

8. The semiconductor device of claim 7, wherein said at least one IPD is selected from the group consisting of a resistor, a capacitor, an inductor, and a fuse.

9. The semiconductor device of claim 7, wherein said electrically conductive or semiconductive heat spreader comprises material selected from the group consisting of silicon (Si) and silicon carbide (Si_XC_Y).

10. The semiconductor device of claim 7, wherein said electrically insulative substrate comprises material selected from the group consisting of glass, aluminum nitride (Al_XN_Y), aluminum oxide (Al_XO_Y), beryllium oxide (Be_XO_Y), diamond, and diamond-like carbon.

11. The semiconductor device of claim 7, wherein said PCM comprises material selected from the group consisting of germanium telluride (Ge_XTe_Y), germanium antimony telluride (Ge_XSb_YTe_Z), germanium selenide (Ge_XSe_Y), and any other chalcogenide.

12. The semiconductor device of claim 7, wherein said heater line comprises material selected from the group consisting of tungsten (W), molybdenum (Mo), titanium (Ti), titanium nitride (TiN), titanium tungsten (TiW), tantalum (Ta), tantalum nitride (TaN), nickel chromium (NiCr), and nickel chromium silicon (NiCrSi).

13. A semiconductor device including an electrically insulative substrate, said semiconductor device further comprising:

at least one integrated passive device (IPD);

a phase-change material (PCM) radio frequency (RF) switch comprising;

a heating element;

a PCM situated over said heating element;

a heater line of said heating element approximately underlying said PCM;

said PCM RF switch being situated over an electrically conductive or semiconductive heat spreader;

said electrically conductive or semiconductive heat spreader is situated over said electrically insulative substrate.

14. The semiconductor device of claim 13, wherein said at least one IPD is selected from the group consisting of a resistor, a capacitor, an inductor, and a fuse.

15. The semiconductor device of claim 13, wherein said electrically conductive or semiconductive heat spreader comprises material selected from the group consisting of silicon (Si) and silicon carbide (Si_XC_Y).

16. The semiconductor device of claim 13, wherein said electrically insulative substrate comprises material selected from the group consisting of glass, aluminum nitride (Al_XN_Y), aluminum oxide (Al_XO_Y), beryllium oxide (Be_XO_Y), diamond, and diamond-like carbon.

17. The semiconductor device of claim 13, wherein said PCM comprises material selected from the group consisting of germanium telluride (Ge_XTe_Y), germanium antimony telluride (Ge_XSb_YTe_Z), germanium selenide (Ge_XSe_Y), and any other chalcogenide.

18. The semiconductor device of claim 13, wherein said heater line comprises material selected from the group consisting of tungsten (W), molybdenum (Mo), titanium (Ti), titanium nitride (TiN), titanium tungsten (TiW), tantalum (Ta), tantalum nitride (TaN), nickel chromium (NiCr), and nickel chromium silicon (NiCrSi).