Logic drive based on standard commodity FPGA IC chips using non-volatile memory cells
First Claim
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1. A semiconductor IC chip comprising:
- a programmable logic circuit configured to be programmed to perform a logic operation, comprising;
a plurality of input points for a first input data set for the logic operation;
a plurality of first non-volatile memory cells configured to store a plurality of resulting values of a look-up table (LUT), each of the plurality of first non-volatile memory cells comprising;
a floating-gate P-type MOS transistor having a gate terminal, comprising a first fin of N-type protruding from a P-type silicon substrate of the semiconductor IC chip and extending in a first direction, and an N-type region in the P-type silicon substrate and directly under the first fin;
a floating-gate MOS device having a gate terminal coupling to the gate terminal of the floating-gate P-type MOS transistor, comprising a protrusion protruding from the P-type silicon substrate, wherein the floating-gate MOS device is configured as a MOS capacitor;
an interconnect extending from the first fin to the protrusion in a second direction, substantially perpendicular to the first direction, wherein the interconnect covers a top and two opposite sidewalls of the first fin and a top and a first sidewall of the protrusion; and
an oxide layer over the P-type silicon substrate, between the interconnect and the first fin and between the interconnect and the protrusion, wherein the oxide layer on the protrusion divides the protrusion into two sides opposite to each other in the first direction, wherein the two sides are doped with impurities, wherein the two sides are configured as a first terminal of the MOS capacitor and the gate terminal of the floating-gate MOS device is configured as a second terminal of the MOS capacitor, wherein the interconnect connects the gate terminals of the floating-gate P-type MOS transistor and floating-gate MOS device, and wherein the interconnect is floating;
a multiplexer configured to select, in accordance with the first input data set, a resulting value from the plurality of resulting values of the look-up table (LUT) as an output data for the logic operation; and
an output point for the output data for the logic operation.
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Abstract
A field-programmable-gate-array (FPGA) IC chip includes multiple first non-volatile memory cells in the FPGA IC chip, wherein the first non-volatile memory cells are configured to save multiple resulting values for a look-up table (LUT) of a programmable logic block of the FPGA IC chip, wherein the programmable logic block is configured to select, in accordance with its inputs, one from the resulting values into its output; and multiple second non-volatile memory cells in the FPGA IC chip, wherein the second non-volatile memory cells are configured to save multiple programming codes configured to control a switch of the FPGA IC chip.
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Citations
32 Claims
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1. A semiconductor IC chip comprising:
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a programmable logic circuit configured to be programmed to perform a logic operation, comprising; a plurality of input points for a first input data set for the logic operation; a plurality of first non-volatile memory cells configured to store a plurality of resulting values of a look-up table (LUT), each of the plurality of first non-volatile memory cells comprising; a floating-gate P-type MOS transistor having a gate terminal, comprising a first fin of N-type protruding from a P-type silicon substrate of the semiconductor IC chip and extending in a first direction, and an N-type region in the P-type silicon substrate and directly under the first fin; a floating-gate MOS device having a gate terminal coupling to the gate terminal of the floating-gate P-type MOS transistor, comprising a protrusion protruding from the P-type silicon substrate, wherein the floating-gate MOS device is configured as a MOS capacitor; an interconnect extending from the first fin to the protrusion in a second direction, substantially perpendicular to the first direction, wherein the interconnect covers a top and two opposite sidewalls of the first fin and a top and a first sidewall of the protrusion; and an oxide layer over the P-type silicon substrate, between the interconnect and the first fin and between the interconnect and the protrusion, wherein the oxide layer on the protrusion divides the protrusion into two sides opposite to each other in the first direction, wherein the two sides are doped with impurities, wherein the two sides are configured as a first terminal of the MOS capacitor and the gate terminal of the floating-gate MOS device is configured as a second terminal of the MOS capacitor, wherein the interconnect connects the gate terminals of the floating-gate P-type MOS transistor and floating-gate MOS device, and wherein the interconnect is floating; a multiplexer configured to select, in accordance with the first input data set, a resulting value from the plurality of resulting values of the look-up table (LUT) as an output data for the logic operation; and an output point for the output data for the logic operation. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A semiconductor IC chip comprising:
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a switch; and a plurality of non-volatile memory cells configured to store a plurality of programming codes configured to control the switch, each of the plurality of non-volatile memory cells comprising; a floating-gate P-type MOS transistor having a gate terminal, comprising a first fin of N-type protruding from a P-type silicon substrate of the semiconductor IC chip and extending in a first direction, and an N-type region in the P-type silicon substrate and directly under the first fin; a floating-gate MOS device having a gate terminal coupling to the gate terminal of the floating-gate P-type MOS transistor, comprising a protrusion protruding from the P-type silicon substrate, wherein the floating-gate MOS device is configured as a MOS capacitor; an interconnect extending from the first fin to the protrusion in a second direction, substantially perpendicular to the first direction, wherein the interconnect covers a top and two opposite sidewalls of the first fin and a top and a first sidewall of the protrusion; and an oxide layer over the P-type silicon substrate, between the interconnect and the first fin and between the interconnect and the protrusion, wherein the oxide layer on the protrusion divides the protrusion into two sides opposite to each other in the first direction, wherein the two sides are doped with impurities, wherein the two sides are configured as a first terminal of the MOS capacitor and the gate terminal of the floating-gate MOS device is configured as a second terminal of the MOS capacitor, wherein the interconnect connects the gate terminals of the floating-gate P-type MOS transistor and floating-gate MOS device, and wherein the interconnect is floating. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24)
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25. A non-volatile memory cell in a semiconductor IC chip, comprising:
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a floating-gate P-type MOS transistor having a gate terminal, comprising a first fin of N-type protruding from a P-type silicon substrate of the semiconductor IC chip and extending in a first direction, and an N-type region in the P-type silicon substrate and directly under the first fin; a floating-gate MOS device having a gate terminal coupling to the gate terminal of the floating-gate P-type MOS transistor, comprising a protrusion protruding from the P-type silicon substrate, wherein the floating-gate MOS device is configured as a MOS capacitor; an interconnect extending from the first fin to the protrusion in a second direction, substantially perpendicular to the first direction, wherein the interconnect covers a top and two opposite sidewalls of the first fin and a top and a first sidewall of the protrusion; and an oxide layer over the P-type silicon substrate, between the interconnect and the first fin and between the interconnect and the protrusion, wherein the oxide layer on the protrusion divides the protrusion into two sides opposite to each other in the first direction, wherein the two sides are doped with impurities, wherein the two sides are configured as a first terminal of the MOS capacitor and the gate terminal of the floating-gate MOS device is configured as a second terminal of the MOS capacitor, wherein the interconnect connects the gate terminals of the floating-gate P-type MOS transistor and floating-gate MOS device, and wherein the interconnect is floating. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32)
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Specification