Resistive memory device having reduced chip size and operation method thereof

• US 10,600,466 B2
• Filed: 06/24/2019
• Issued: 03/24/2020
• Est. Priority Date: 09/06/2017
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Pyo, Suk-Soo, Jung, Hyun-Taek, Song, Tae-Joong
• Primary Examiner(s): Luu, Pho M
• Application Number:
  US16/450,035
• Publication Number:
  US 20190311755A1
• Time in Patent Office: 274 Days
• CPC Class Codes: G11C 11/1657 Word-line or row circuits
• CPC Class Codes: G11C 11/1659 Cell access
• CPC Class Codes: G11C 11/1673 Reading or sensing circuits or methods
• CPC Class Codes: G11C 11/1675 Writing or programming circuits or methods
• CPC Class Codes: G11C 11/1693 Timing circuits or methods
• CPC Class Codes: G11C 11/1697 Power supply circuits
• CPC Class Codes: G11C 11/5607 using magnetic storage elements
• CPC Class Codes: G11C 13/0004 comprising amorphous/crystalline phase transition cells
• CPC Class Codes: G11C 13/0007 comprising metal oxide memory material, e.g. perovskites
• CPC Class Codes: G11C 13/0028 Word-line or row circuits
• CPC Class Codes: G11C 13/003 Cell access
• CPC Class Codes: G11C 13/004 Reading or sensing circuits or methods
• CPC Class Codes: G11C 13/0061 Timing circuits or methods
• CPC Class Codes: G11C 13/0069 Writing or programming circuits or methods
• CPC Class Codes: G11C 2013/0071 Write using write potential applied to access device gate
• CPC Class Codes: G11C 2213/79 Array wherein the access device being a transistor
• CPC Class Codes: G11C 8/08 Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Abstract

A resistive memory device includes: a voltage generator generating a write word line voltage according to activation of a write enable signal; a switch circuit outputting one of the write word line voltage and a read word line voltage in response to the write enable signal as an output voltage; a word line power path connected to the switch circuit to receive the output voltage; and a word line driver driving a word line according to a voltage applied to the word line power path, wherein a write command starts to be received after a certain delay following the activation of the write enable signal, and a write operation is performed within an activation period of the write enable signal in response to the received write command.

Claims

1. A memory device comprising:

a voltage generator generating a write word line voltage according to activation of a write enable signal;

a switch circuit outputting one of the write word line voltage and a read word line voltage in response to the write enable signal as an output word line voltage;

a word line power path connected to the switch circuit to receive the output word line voltage; and

a word line driver driving a word line of the memory device according to a voltage applied to the word line power path, wherein the memory device starts to receive a write command after a certain delay following the activation of the write enable signal, and a write operation is performed on the memory device within an activation period of the write enable signal in response to the received write command,

wherein at least one read command is further received during the activation period of the write enable signal, and

wherein only a read command is received during a deactivation period of the write enable signal.

2. The memory device according to claim 1, wherein the write enable signal is provided by a memory controller external to the memory device.

3. The memory device according to claim 1, wherein the switch circuit comprises:

a first switch configured to output the write word line voltage to the word line power path based on a state of the write enable signal; and

a second switch configured to output the read word line voltage to the word line power path based on a state of the write enable signal.

4. The memory device according to claim 3, wherein the first switch is turned on to output the write line voltage while the write enable signal is activated, and the second switch is turned on to output the read line voltage while the write enable signal is deactivated.

5. The memory device according to claim 1, wherein, in response to at least one read command further received during the activation period of the write enable signal, a read operation is further performed within the activation period.

6. The memory device according to claim 5, wherein the at least one read command is received before the certain delay has elapsed and after the activation of the write enable signal.

7. The memory device according to claim 1, wherein only a read operation corresponding to the read command is performed on the memory device within the deactivation period.

8. A method of operating a resistive memory device, the method comprising:

generating, by a word line driver, a first word line voltage in response to activation of a write enable signal;

generating, by the word line driver, a second word line voltage related to a read operation;

transferring, by the word line driver, the first word line voltage to a word line power path in response to the activation of the write enable signal;

performing a write operation by driving a word line of the resistive memory device by using the first word line voltage, in correspondence with a write command received after a certain delay following the activation of the write enable signal; and

performing the read operation by driving the word line by using the first word line voltage, in correspondence with at least one read command received during an activation period of the write enable signal,

wherein the word line power path is arranged in common with respect to the first word line voltage and the second word line voltage, and

wherein the word line is driven by activating the word line by using the first word line voltage or the second word line voltage.

9. The method according to claim 8, further comprising:

transferring, by the word line driver, the second word line voltage to the word line power path in response to deactivation of the write enable signal,

wherein the first word line voltage and the second word line voltage have different levels from each other.

10. The method according to claim 9, further comprising:

during a deactivation period of the write enable signal,

receiving, by the resistive memory device, only a read command from a memory controller external to the resistive memory device; and

performing the read operation by driving the word line using the second word line voltage.

11. A method of operating a memory controller controlling a memory device, the method comprising:

activating, by the memory controller, a write enable signal and providing the write enable signal to the memory device;

starting, by the memory controller, transmission of one or more write commands to the memory device, after a certain delay following the activation of the write enable signal;

transmitting, by the memory controller, at least one read command during an activation period of the write enable signal; and

deactivating, by the memory controller, the write enable signal after completion of the transmission of the one or more write commands and the at least one read command,

wherein the one or more write commands and the at least one read command are together transmitted during the same activation period of the write enable signal.

12. The method according to claim 11, further comprising:

transmitting, by the memory controller, only a read command during a deactivation period of the write enable signal.