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Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientations

  • US 10,600,478 B2
  • Filed: 09/05/2018
  • Issued: 03/24/2020
  • Est. Priority Date: 07/06/2018
  • Status: Active Grant
First Claim
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1. A memory device comprising:

  • an array of Multi-Bit Cells (MBCs), the MBCs each including a plurality of cell elements having different sets of state parameter values, wherein a pinned magnetization polarization of a first cell of the plurality of cell elements is opposite a pinned magnetization polarization of a second cell of the plurality of cell elements;

    one or more memory circuits configured to;

    sequentially apply different successive sets of state programming conditions to a selected plurality of the MBCs, wherein a respective set of state programming conditions programs a corresponding one of the plurality of cell elements to a respective state parameter value;

    determine, after applying each of the set of programming conditions, a state change result for the selected plurality of the MBCs; and

    determine a read state of the selected plurality of MBCs based on the determined state change results.

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