Thin film transistor and flat display device

• US 10,600,817 B2
• Filed: 10/04/2018
• Issued: 03/24/2020
• Est. Priority Date: 12/24/2010
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Hwang, Won-Mi, Jung, Young-Bae
• Primary Examiner(s): Tran, Trang Q
• Application Number:
  US16/151,639
• Publication Number:
  US 20190035814A1
• Time in Patent Office: 537 Days
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

A thin film transistor (TFT) includes a scan line on a substrate, the scan line including a straight portion extending along a first direction, an active layer including an oxide semiconductor and overlapping the straight portion of the scan line, the active layer having a first region, a second region, and a third region that are linearly and sequentially aligned along the first direction, a first insulating layer between the active layer and the scan line, a first electrode connected to the first region of the active layer, and a second electrode connected to the third region of the active layer.

Claims

1. A display device, comprising:

a thin film transistor (TFT), the TFT including;

a scan line,

an active layer including an oxide semiconductor, the active layer having a first region, a second region, and a third region that are linearly and sequentially aligned along a first direction, the second region being a channel region between the first region and the third region,

an insulating layer between the active layer and the scan line, wherein the scan line, the insulating layer, and the active layer are sequentially stacked on a substrate along a third direction, the insulating layer covering the scan line, the third direction being substantially perpendicular to the first direction,

a first electrode having a first contact portion contacted with the first region of the active layer, and

a second electrode having a second contact portion contacted with the third region of the active layer;

a first capacitor electrode on a substrate;

a second capacitor electrode connected to the second electrode of the TFT, the second capacitor electrode being insulated from the first capacitor electrode; and

a pixel electrode connected to the second electrode of the TFT and to the second capacitor electrode,

wherein the scan line includes a straight portion extending along the first direction,

wherein the first contact portion and the second contact portion overlap with edge portions of the scan line in a second direction, the second direction being substantially perpendicular to the first direction and the third direction,

wherein the straight portion of the scan line includes a first portion that overlaps the first and second contact portions, and second portions that do not overlap the first and second electrodes and disposed at both sides of the first portion in the first direction, and

wherein a width of the first electrode and a width of the second electrode in the second direction are larger than widths of the second portions of the straight portion in the second direction,

the first contact portion overlaps an end portion of the first region of the active layer at one side of the active layer in the first direction, and

the second contact portion overlaps an end portion of the third region of the active layer at an opposite side of the active layer in the first direction.

2. The display device of claim 1, wherein the second capacitor electrode is integral with the pixel electrode, the second capacitor electrode and pixel electrode including a same material.

3. The display device of claim 1, wherein the first capacitor electrode and the scan line are at a same height with respect to the substrate and include a same material.

4. The display device of claim 1, wherein the active layer is between the insulating layer and each of the first and second electrodes.

5. The display device of claim 1, wherein the active layer includes indium tin oxide (ITO) or indium zinc oxide (IZO).

6. The display device of claim 1, wherein the first portion of the straight portion extends along and overlaps an entire length of the active layer along the first direction.

7. A thin film transistor (TFT), comprising:

a scan line;

an active layer including an oxide semiconductor, the active layer having a first region, a second region, and a third region that are linearly and sequentially aligned along a first direction, the second region being a channel region disposed between the first region and the third region;

an insulating layer between the active layer and the scan line, wherein the scan line, the insulating layer, and the active layer are sequentially stacked on a substrate along a third direction, the insulating layer covering the scan line, the third direction being substantially perpendicular to the first direction;

a first electrode having a first contact portion contacted with the first region of the active layer; and

a second electrode having a second contact portion contacted with the third region of the active layer,

wherein the scan line includes a straight portion extending along the first direction,

wherein the first contact portion and the second contact portion overlap with edge portions of the scan line in a second direction, the second direction being substantially perpendicular to the first direction and the third direction,

wherein the straight portion of the scan line includes a first portion that overlaps the first and second contact portions, and second portions that do not overlap the first and second electrodes and disposed at both sides of the first portion in the first direction,

wherein a width of the first electrode and a width of the second electrode in the second direction are larger than widths of the second portions of the straight portion in the second direction,

the first contact portion overlaps an end portion of the first region of the active layer at one side of the active layer in the first direction, and

the second contact portion overlaps an end portion of the third region of the active layer at an opposite side of the active layer in the first direction.

8. The TFT of claim 7, wherein the active layer is between the insulating layer and each of the first and second electrodes.

9. The TFT of claim 7, wherein the active layer includes indium tin oxide (ITO) or indium zinc oxide (IZO).

10. The TFT of claim 7, wherein the straight portion of the scan line extends along and overlaps an entire length of the active layer along the first direction.