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Semiconductor device and method for manufacturing semiconductor device

  • US 10,600,875 B2
  • Filed: 06/21/2017
  • Issued: 03/24/2020
  • Est. Priority Date: 07/01/2016
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first conductor;

    a first insulator over the first conductor;

    a first oxide over the first insulator;

    a second oxide over the first oxide;

    a second conductor and a third conductor over the second oxide, wherein the second conductor and the third conductor are separate from each other;

    a third oxide over the first insulator, the second oxide, the second conductor, and the third conductor;

    a second insulator over the third oxide;

    a fourth conductor at least part of which overlaps with the second oxide and which is over the second insulator; and

    a third insulator over the first insulator, the second insulator, and the fourth conductor,the second oxide comprising;

    a region where an energy of a conduction band minimum of an energy band is low; and

    a region where an energy of a conduction band minimum of an energy band is high,wherein the region where the energy of the conduction band minimum is low includes more carriers than the region where the energy of the conduction band minimum is high,wherein an energy of a conduction band minimum of the third oxide is higher than the energy of the conduction band minimum of the region of the second oxide where the energy of the conduction band minimum is low, andwherein side surfaces of the first oxide and the second oxide are covered with the third oxide.

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