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Self-repairing field effect transisitor

  • US 10,600,902 B2
  • Filed: 02/13/2008
  • Issued: 03/24/2020
  • Est. Priority Date: 02/13/2008
  • Status: Active Grant
First Claim
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1. A device comprising:

  • a plurality of source contacts within a field effect transistor;

    a plurality of field effect transistor cells within the field effect transistor, wherein each cell includes a corresponding source contact;

    a source interconnect within the field effect transistor; and

    a plurality of source fuse links disposed between the source interconnect and corresponding ones of the plurality of source contacts in corresponding trenches through an encapsulate layer, wherein a top of a gate of at least one of the plurality of field effect transistor cell is below the bottom of the encapsulate layer, wherein the encapsulate layer is disposed between the source interconnect and the plurality of source contacts within the field effect transistor, and wherein each source contact is coupled to the source interconnect by a given one of the plurality of source fuse links configured to blow in response to a high current.

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