Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules
First Claim
1. A method of forming a boule used to form one or more single crystal substrates, comprising performing a crystal growth process on one or more seed crystals to form one or more boules, whereinthe one or more seed crystals each have a first crystallographic orientation on a first surface,the first surface of each of the one or more seed crystals includes parallel features that are:
- formed on the first surface of or within each of the one or more seed crystals;
orformed between two or more tiled crystals that form a mosaic of tiled crystals,a first growth facet and a second growth facet form between the parallel features as crystal growth occurs on the one or more seed crystals during the crystal growth process, wherein the first growth facet has a second crystallographic orientation and the second growth facet has a third crystallographic orientation, and exposed surfaces of the growing crystal do not include the first crystallographic orientation, and whereineach of the second crystallographic orientation and the third crystallographic orientation are oblique with respect to the first crystallographic orientation, andthe first crystallographic orientation, the second crystallographic orientation, and the third crystallographic orientation are each different families of crystallographic orientations.
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Abstract
Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules.
183 Citations
18 Claims
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1. A method of forming a boule used to form one or more single crystal substrates, comprising performing a crystal growth process on one or more seed crystals to form one or more boules, wherein
the one or more seed crystals each have a first crystallographic orientation on a first surface, the first surface of each of the one or more seed crystals includes parallel features that are: -
formed on the first surface of or within each of the one or more seed crystals;
orformed between two or more tiled crystals that form a mosaic of tiled crystals, a first growth facet and a second growth facet form between the parallel features as crystal growth occurs on the one or more seed crystals during the crystal growth process, wherein the first growth facet has a second crystallographic orientation and the second growth facet has a third crystallographic orientation, and exposed surfaces of the growing crystal do not include the first crystallographic orientation, and wherein each of the second crystallographic orientation and the third crystallographic orientation are oblique with respect to the first crystallographic orientation, and the first crystallographic orientation, the second crystallographic orientation, and the third crystallographic orientation are each different families of crystallographic orientations. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification