Circuit for regulating leakage current in charge pump
First Claim
1. A circuit for regulating a leakage current in a charge pump, comprising a bias voltage generating circuit and a first transistor, wherein:
- the bias voltage generating circuit generates a bias voltage that is proportional to a supply voltage;
the first transistor has a gate coupled to the bias voltage and a source that is grounded;
the first transistor has a drain coupled to an output of the charge pump, a voltage at the drain of the first transistor being proportional to the supply voltage; and
a current between the source and drain of the first transistor is proportional to the supply voltage that powers the charge pump.
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Accused Products
Abstract
A circuit for regulating a leakage current in a charge pump is disclosed. The circuit includes a bias voltage generating circuit and a first transistor, wherein: the bias voltage generating circuit generates a bias voltage that is proportional to a supply voltage; a gate of the first transistor is coupled to the bias voltage; the first transistor has a drain that is coupled to an output of the charge pump and a source that is grounded; a voltage the drain of the first transistor is proportional to the supply voltage; and a current flowing through the source and drain of the first transistor is proportional to the supply voltage that powers the charge pump.
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Citations
19 Claims
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1. A circuit for regulating a leakage current in a charge pump, comprising a bias voltage generating circuit and a first transistor, wherein:
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the bias voltage generating circuit generates a bias voltage that is proportional to a supply voltage; the first transistor has a gate coupled to the bias voltage and a source that is grounded; the first transistor has a drain coupled to an output of the charge pump, a voltage at the drain of the first transistor being proportional to the supply voltage; and a current between the source and drain of the first transistor is proportional to the supply voltage that powers the charge pump. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A circuit for regulating a leakage current in a charge pump, comprising a first transistor, a third transistor and a fourth transistor, wherein:
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the first transistor has a gate connected to drains of the third and fourth transistors for receiving a bias voltage that is proportional to a supply voltage; the first transistor has a drain coupled to an output of the charge pump and a source that is grounded, a voltage at the drain of the first transistor being proportional to the supply voltage;
the third transistor has a gate that is grounded, a source coupled to the supply voltage and the drain connected to the drain of the fourth transistor;the fourth transistor has a gate connected both to the drain of the fourth transistor and the gate of the first transistor and a source that is grounded; and a current between the source and drain of the first transistor is proportional to the supply voltage that powers the charge pump. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
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Specification