Substrate processing apparatus

• US 10,607,863 B2
• Filed: 09/30/2015
• Issued: 03/31/2020
• Est. Priority Date: 09/30/2014
• Status: Active Grant

• Current Assignee: Shibaura Mechatronics Corporation
• Original Assignee: Shibaura Mechatronics Corporation
• Inventors: Hayashi, Konosuke, Ootagaki, Takashi
• Primary Examiner(s): Osterhout, Benjamin L
• Application Number:
  US15/512,308
• Publication Number:
  US 20170278729A1
• Time in Patent Office: 1,644 Days
• CPC Class Codes: B08B 2203/0288 Ultra or megasonic jets
• CPC Class Codes: B08B 3/02 Cleaning by the force of jets or sprays
• CPC Class Codes: B08B 3/08 the liquid having chemical or dissolving effect substances used, see the relevant classes
• CPC Class Codes: B08B 3/10 with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
• CPC Class Codes: H01L 21/67028 for cleaning followed by drying, rinsing, stripping, blasting or the like
• CPC Class Codes: H01L 21/67034 for drying
• CPC Class Codes: H01L 21/67051 using mainly spraying means, e.g. nozzles
• CPC Class Codes: H01L 21/6708 using mainly spraying means, e.g. nozzles
• CPC Class Codes: H01L 21/6715 Apparatus for applying a liquid, a resin, an ink or the like H01L21/67126 takes precedence
• CPC Class Codes: H01L 21/68728 characterised by a plurality of separate clamping members, e.g. clamping fingers
• CPC Class Codes: H01L 21/68785 characterised by the mechanical construction of the susceptor, stage or support
• CPC Class Codes: H01L 21/68792 characterised by the construction of the shaft

Abstract

According to one embodiment, a substrate processing apparatus includes: a removing part (D1) configured to remove liquid droplets present in a recess (30); a drain hole (30a) located at the bottom of the recess (30) of a nozzle head (32), and configured to discharge the liquid droplets as a target to be removed out of the recess (30); and a controller configured to control the discharge state of a gas discharge nozzle (33) such that there is a period in which a gas is discharged from the gas discharge nozzle (33) at a flow rate, at which the gas discharged does not reach a surface to be processed of s substrate W, in a period from the end of the rinsing process using a treatment liquid to the start of the drying process using the gas.

Claims

1. A substrate processing apparatus comprising a nozzle head that faces a surface to be processed of a substrate and has a recess with its opening toward the surface to be processed, a treatment liquid supply nozzle provided to the nozzle head and configured to supply a treatment liquid to the surface to be processed, and a gas discharge nozzle configured to discharge a gas to the surface to be processed, the apparatus configured to perform a process using the treatment liquid and a drying process using the gas, the apparatus comprising:

a removing part configured to remove liquid droplets present in the recess;

a drain part located at a bottom of the recess of the nozzle head, and configured to discharge the liquid droplets as a target to be removed out of the recess;

a controller configured to control discharge state of the gas discharge nozzle such that there is a period in which a gas is discharged from the gas discharge nozzle at a flow rate, at which the gas discharged does not reach the surface to be processed of the substrate, in a period from end of rinsing process using the treatment liquid to start of the drying process using the gas; and

a cover that is located between the nozzle head and the substrate, and has an opening through which the treatment liquid, which is discharged from the treatment liquid supply nozzle provided to the nozzle head to perform treatment on the surface to be processed, passes, wherein

the removing part includes a nozzle that is formed in the nozzle head and has a discharge port of a gas toward the cover, and a turner formed at the opening of the cover, and

the nozzle is configured to discharge the gas toward the turner to lead the gas discharged to the recess.

2. The substrate processing apparatus according to claim 1, wherein the removing part further includes a suction part that is connected to the drain part, and sucks the liquid droplets present in the recess.

3. A substrate processing apparatus comprising a nozzle head that faces a surface to be processed of a substrate and has a recess with its opening toward the surface to be processed, a treatment liquid supply nozzle provided to the nozzle head and configured to supply a treatment liquid to the surface to be processed, and a gas discharge nozzle configured to discharge a gas to the surface to be processed, the apparatus configured to perform a process using the treatment liquid and a drying process using the gas, the apparatus comprising:

a removing part configured to remove liquid droplets present in the recess;

a drain part located at a bottom of the recess of the nozzle head, and configured to discharge the liquid droplets as a target to be removed out of the recess; and

a controller configured to control discharge state of the gas discharge nozzle such that there is a period in which a gas is discharged from the gas discharge nozzle at a flow rate, at which the gas discharged does not reach the surface to be processed of the substrate, in a period from end of rinsing process using the treatment liquid to start of the drying process using the gas,

wherein the removing part includes a discharge port that is located in a surface of the recess, and configured to discharge a removing material toward the drain part located at the bottom to remove the liquid droplets present in the recess.

4. The substrate processing apparatus according to claim 3, wherein the discharge port is formed annularly in the surface of the recess.

5. The substrate processing apparatus according to claim 3, wherein the discharge port is located in an upper portion of the recess, and is arranged in an orientation which is perpendicular to a line that connects location of the discharge port and the drain part with a shortest distance, and in which the removing material can be discharged along the surface of the recess.

6. The substrate processing apparatus according to claim 3, wherein the removing part further includes a vibrator that vibrates the nozzle head.

7. The substrate processing apparatus according to claim 3, wherein the removing part further includes a heater that heats the nozzle head.

8. The substrate processing apparatus according to claim 3, wherein a surface of the recess of the nozzle head is roughened to avoid retention of the liquid droplets as a target to be removed.

9. The substrate processing apparatus according to claim 3, wherein a porous material is applied to a surface of the recess of the nozzle head.

10. The substrate processing apparatus according to claim 3, wherein the recess of the nozzle head is formed of a porous material.

11. A substrate processing apparatus comprising a nozzle head that faces a surface to be processed of a substrate and has a recess with its opening toward the surface to be processed, a treatment liquid supply nozzle provided to the nozzle head and configured to supply a treatment liquid to the surface to be processed, and a gas discharge nozzle configured to discharge a gas to the surface to be processed, the apparatus configured to perform a process using the treatment liquid and a drying process using the gas, the apparatus comprising:

a removing part configured to remove liquid droplets present in the recess;

a drain part located at a bottom of the recess of the nozzle head, and configured to discharge the liquid droplets as a target to be removed out of the recess; and

a controller configured to control discharge state of the gas discharge nozzle such that there is a period in which a gas is discharged from the gas discharge nozzle at a flow rate, at which the gas discharged does not reach the surface to be processed of the substrate, in a period from end of rinsing process using the treatment liquid to start of the drying process using the gas,

wherein the removing part is a groove that is formed to connect an upper portion of the recess and the drain part located at the bottom of the recess with a shortest distance.