×

Gate aligned contact and method to fabricate same

  • US 10,607,884 B2
  • Filed: 05/14/2019
  • Issued: 03/31/2020
  • Est. Priority Date: 12/22/2011
  • Status: Active Grant
First Claim
Patent Images

1. An integrated circuit structure, comprising:

  • a fin comprising silicon, the fin having a length along a first direction;

    a first gate structure over the fin and along a second direction orthogonal to the first direction, the first gate structure comprising a gate dielectric layer, a metal gate, sidewall spacers, and a dielectric cap laterally adjacent to the sidewall spacers;

    a second gate structure over the fin and along the second direction, the second gate structure adjacent the first gate structure, and the second gate structure comprising a gate dielectric layer, a metal gate, sidewall spacers, and a dielectric cap laterally adjacent to the sidewall spacers;

    a third gate structure over the fin and along the second direction, the third gate structure adjacent the second gate structure, and the third gate structure comprising a gate dielectric layer, a metal gate, sidewall spacers, and a dielectric cap laterally adjacent to the sidewall spacers;

    a fourth gate structure over the fin and along the second direction, the fourth gate structure adjacent the third gate structure, and the fourth gate structure comprising a gate dielectric layer, a metal gate, sidewall spacers, and a dielectric cap laterally adjacent to the sidewall spacers;

    a first conductive contact structure over the fin and along the second direction, the first conductive contact structure between the first gate structure and the second gate structure, and the first conductive contact structure having a top surface substantially co-planar with a top surface of the dielectric cap of the first gate structure and with the dielectric cap of the second gate structure;

    a second conductive contact structure over the fin and along the second direction, the second conductive contact structure between the second gate structure and the third gate structure, and the second conductive contact structure having a top surface substantially co-planar with a top surface of the dielectric cap of the second gate structure and with the dielectric cap of the third gate structure; and

    a third conductive contact structure over the fin and along the second direction, the third conductive contact structure between the third gate structure and the fourth gate structure, and the third conductive contact structure having a top surface substantially co-planar with a top surface of the dielectric cap of the third gate structure and with the dielectric cap of the fourth gate structure.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×