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Electrode pad structure of a light emitting diode

  • US 10,608,144 B2
  • Filed: 05/09/2018
  • Issued: 03/31/2020
  • Est. Priority Date: 02/17/2015
  • Status: Active Grant
First Claim
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1. A light emitting diode, configured to be mounted to a connecting element of an external carrier substrate, the light emitting diode comprising:

  • a semiconductor epitaxial structure comprising a first semiconductor layer, a second semiconductor layer and a light emitting layer disposed therebetween, wherein a portion of the first semiconductor layer is exposed by the second semiconductor layer and the light emitting layer;

    a current blocking layer disposed on the second semiconductor layer;

    a current dispersing layer covering the current blocking layer and in contact with the second semiconductor layer;

    a first metal layer disposed on the exposed first semiconductor layer;

    a second metal layer disposed on the current dispersing layer and aligned with the current blocking layer;

    a distributed Bragg reflector (DBR) layer disposed over the semiconductor epitaxial structure, wherein the DBR layer comprises at least one first opening to expose the first metal layer and a plurality of second openings to expose the second metal layer;

    a first electrode pad structure disposed on a top surface of the DBR layer and filled into the at least one first opening; and

    a second electrode pad structure disposed on the top surface of the DBR layer and filled into the second openings, wherein at least one of the first electrode pad structure and the second electrode pad structure comprises;

    a ductility layer, comprising gold and disposed upon the top surface of the DBR layer and filled into one of the at least one first opening and the second openings;

    a eutectic layer for soldering with the connecting element of the external carrier substrate, the eutectic layer being disposed on the ductility layer; and

    a barrier layer for blocking diffusion of material of the eutectic layer, disposed between the ductility layer and the eutectic layer,wherein the eutectic layer is disposed within a region of the ductility layer, and a total area of the eutectic layer is less than a total area of the ductility layer.

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