Pre-clean of silicon germanium for pre-metal contact at source and drain and pre-high K at channel
First Claim
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1. A method for processing a substrate, comprising:
- exposing a surface of the substrate to hydrogen radical species;
exposing the surface of the substrate to a plasma formed from a first fluorine-containing precursor and a first hydrogen-containing precursor;
annealing the substrate;
forming an epitaxial layer on the surface of the substrate; and
between annealing the substrate and forming an epitaxial layer on the surface of the substrate, exposing the surface of the substrate to a plasma formed from a second fluorine-containing precursor and a second hydrogen-containing precursor in a first processing chamber.
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Abstract
The present disclosure generally relates to methods for removing contaminants and native oxides from substrate surfaces. The method includes exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%, then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor, and then exposing the surface of the substrate to second hydrogen radical species.
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19 Claims
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1. A method for processing a substrate, comprising:
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exposing a surface of the substrate to hydrogen radical species; exposing the surface of the substrate to a plasma formed from a first fluorine-containing precursor and a first hydrogen-containing precursor; annealing the substrate; forming an epitaxial layer on the surface of the substrate; and between annealing the substrate and forming an epitaxial layer on the surface of the substrate, exposing the surface of the substrate to a plasma formed from a second fluorine-containing precursor and a second hydrogen-containing precursor in a first processing chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for processing a substrate, comprising:
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exposing a surface of the substrate to a plurality of plasma treatments, wherein one or more of the plasma treatments comprise exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor; exposing the surface of the substrate to hydrogen radical species between at least two of the plurality of plasma treatments; and then forming an epitaxial layer on the surface of the substrate. - View Dependent Claims (14, 15, 16, 17)
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18. A method for processing a substrate, comprising:
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performing a plurality of contaminant removal processes on a surface of a substrate, wherein each contaminant removal process comprises exposing the surface of the substrate to plasma formed radical species of a fluorine-containing precursor and a hydrogen-containing precursor; between contaminant removal processes, treating the surface of the substrate with a pre-treatment process comprising exposing a surface of the substrate to hydrogen radical species; and
thenforming an epitaxial layer on the surface of the substrate. - View Dependent Claims (19)
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Specification