Systems and methods to form airgaps

• US 10,615,047 B2
• Filed: 02/28/2019
• Issued: 04/07/2020
• Est. Priority Date: 02/28/2018
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Chen, Zhijun, Xu, Lin, Wang, Anchuan
• Primary Examiner(s): Ahmed, Shamim
• Application Number:
  US16/288,311
• Publication Number:
  US 20190267248A1
• Time in Patent Office: 404 Days
• Field of Search: None
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/7682 the dielectric comprising air gaps
• CPC Class Codes: H01L 21/76831 in via holes or trenches, e.g. non-conductive sidewall liners
• CPC Class Codes: H01L 2221/1063 Sacrificial or temporary thin dielectric films in openings in a dielectric

Abstract

Exemplary etching methods may include flowing a fluorine-containing precursor into a substrate processing region of a semiconductor processing chamber. The methods may include flowing a hydrogen-containing precursor into the substrate processing region. The methods may include contacting a substrate housed in the substrate processing region with the fluorine-containing precursor and the hydrogen-containing precursor. The substrate may include a trench or recessed feature, and a spacer may be formed along a sidewall of the trench or feature. The spacer may include a plurality of layers including a first layer of a carbon-containing or nitrogen-containing material, a second layer of an oxygen-containing material, and a third layer of a carbon-containing or nitrogen-containing material. The second layer of the spacer may be disposed between the first layer and third layer of the spacer. The methods may also include removing the oxygen-containing material.

Claims

1. An etching method comprising:

flowing a fluorine-containing precursor into a substrate processing region of a semiconductor processing chamber;

flowing a hydrogen-containing precursor into the substrate processing region;

contacting a substrate housed in the substrate processing region with the fluorine-containing precursor and the hydrogen-containing precursor, wherein the substrate comprises a trench, wherein a spacer is formed along a sidewall of the trench, wherein the spacer includes a plurality of layers including a first layer of a carbon-containing material, a second layer of an oxygen-containing material, and a third layer of a carbon-containing material, and wherein the second layer of the spacer is disposed between the first layer and third layer of the spacer; and

removing the oxygen-containing material.

2. The etching method of claim 1, wherein the hydrogen-containing precursor is maintained fluidly isolated from a plasma formable within the semiconductor processing chamber in a remote plasma region of the semiconductor processing chamber.

3. The etching method of claim 1, wherein the hydrogen-containing precursor comprises water vapor.

4. The etching method of claim 1, wherein the fluorine-containing precursor comprises anhydrous hydrogen fluoride.

5. The etching method of claim 1, wherein each layer of the spacer is characterized by an aspect ratio greater than or about 20:

1.

6. The etching method of claim 5, wherein the oxygen-containing material is characterized by a width of less than or about 5 nm.

7. The etching method of claim 1, wherein a temperature of the substrate is maintained below or about 10°

C. during the etching method.

8. The etching method of claim 1, wherein the spacer further comprises a fourth layer positioned between the second layer and the third layer, and wherein the fourth layer is an oxygen-containing material.

9. The etching method of claim 8, wherein the fourth layer of the spacer is characterized by a stoichiometrically lower amount of oxygen than the second layer of the spacer.

10. The etching method of claim 1, wherein the substrate processing region is maintained plasma free during the etching method.

11. A removal method comprising:

flowing a fluorine-containing precursor into a substrate processing region of a semiconductor processing chamber;

flowing water vapor into the substrate processing region;

contacting a substrate housed in the substrate processing region with the fluorine-containing precursor and the water vapor, wherein the substrate comprises a trench, wherein a spacer is formed along a sidewall of the trench, wherein the spacer includes a plurality of lateral layers including a first layer of a carbon-containing material adjacent a sidewall of the trench, a second layer comprising an oxygen-containing material, and a third layer of a carbon-containing material, and wherein the second layer of the spacer is disposed between the first layer of the spacer and third layer of the spacer;

maintaining a relative humidity within the substrate processing region of the semiconductor processing chamber below or about 60%; and

removing the second layer of the spacer.

12. The removal method of claim 11, wherein the second layer of the spacer comprises a first oxygen-containing layer adjacent the first layer of the spacer and a second oxygen-containing layer adjacent the third layer of the spacer.

13. The removal method of claim 12, wherein the second oxygen-containing layer is characterized by a lower oxygen content than the first oxygen-containing layer.

14. The removal method of claim 12, wherein removing the second layer of the spacer comprises:

removing the first oxygen-containing layer in a top-to-bottom etch; and

subsequently removing the second oxygen-containing layer in a lateral etch.

15. The removal method of claim 14, wherein the first layer of the spacer and the third layer of the spacer are substantially maintained during the second layer removal.

16. The removal method of claim 15, wherein the second layer of the spacer is removed at a selectivity relative to the third layer of the spacer of greater than or about 50:

1.

17. The removal method of claim 11, wherein the first layer of the spacer and the third layer of the spacer comprise silicon nitride or silicon carbon nitride.

18. The removal method of claim 11, wherein the second layer of the spacer extends beneath the third layer of the spacer, and wherein the method further comprises laterally etching the second spacer layer from beneath the third layer of the spacer.

19. The removal method of claim 11, wherein the fluorine-containing precursor is anhydrous hydrogen fluoride, and wherein the substrate processing region is maintained plasma-free during the removal method.

20. An etching method comprising:

flowing anhydrous hydrogen fluoride into a substrate processing region of a semiconductor processing chamber;

flowing water vapor into the substrate processing region;

contacting a substrate housed in the substrate processing region with the anhydrous hydrogen fluoride and the water vapor, wherein the substrate comprises a trench, wherein a spacer is formed along a sidewall of the trench, wherein the spacer includes a plurality of lateral layers including a first layer of a carbon-containing material adjacent a sidewall of the trench, a second layer comprising a first oxygen-containing material and a second oxygen-containing material different from the first oxygen-containing material, and a third layer of a nitrogen-containing material, wherein the second layer of the spacer is disposed between the first layer of the spacer and third layer of the spacer, and wherein the second layer of the spacer at least partially extends laterally beneath the third layer of the spacer;

maintaining a relative humidity within the substrate processing region of the semiconductor processing chamber below or about 60%; and

removing the second layer of the spacer.