Semiconductor device including wrap around contact and method of forming the semiconductor device
First Claim
Patent Images
1. A semiconductor device, comprising:
- a plurality of semiconductor layers formed on a plurality of fin structures;
an epitaxial layer comprising;
a first portion formed on the plurality of fin structures, a lowermost portion of the first portion being formed at an uppermost surface the plurality of fin structures; and
a second portion formed on a sidewall of the plurality of semiconductor layers;
a gate structure formed on the plurality of semiconductor layers; and
a wrap around contact formed on the first and second portions of the epitaxial layer, the wrap around contact being formed at an interface between the lowermost portion of the first portion and the uppermost surface the plurality of fin structures.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device includes a plurality of semiconductor layers formed on a plurality of fin structures, an epitaxial layer formed on the plurality of fin structures and on a sidewall of the plurality of semiconductor layers, a gate structure formed on the plurality of semiconductor layers, and a wrap around contact formed on the epitaxial layer.
28 Citations
20 Claims
-
1. A semiconductor device, comprising:
-
a plurality of semiconductor layers formed on a plurality of fin structures; an epitaxial layer comprising; a first portion formed on the plurality of fin structures, a lowermost portion of the first portion being formed at an uppermost surface the plurality of fin structures; and a second portion formed on a sidewall of the plurality of semiconductor layers; a gate structure formed on the plurality of semiconductor layers; and a wrap around contact formed on the first and second portions of the epitaxial layer, the wrap around contact being formed at an interface between the lowermost portion of the first portion and the uppermost surface the plurality of fin structures. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
-
10. A semiconductor device, comprising:
-
a plurality of semiconductor layers formed on a plurality of fin structures; a faceted epitaxial layer comprising; a first portion formed on the plurality of fin structures, a lowermost portion of the first portion being formed at an uppermost surface the plurality of fin structures; and a second portion formed on a sidewall of the plurality of semiconductor layers; a gate structure formed on the plurality of semiconductor layers; and a wrap around contact formed on the first and second portions of the faceted epitaxial layer, the wrap around contact being formed at an interface between the lowermost portion of the first portion and the uppermost surface the plurality of fin structures. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
-
-
19. A semiconductor device, comprising:
-
a plurality of semiconductor layers formed on a plurality of fin structures; a shallow trench isolation (STI) region formed between the plurality of fin structures, an upper surface of the STI region being coplanar with an upper surface of the plurality of fin structures; an epitaxial layer comprising; a first portion formed on the plurality of fin structures; and a second portion formed on a sidewall of the plurality of semiconductor layers; a plurality of gate structures formed on the plurality of semiconductor layers, and comprising a metal layer and a spacer formed on a side of the metal layer; and a wrap around contact formed on the spacer and on the first and second portions of the epitaxial layer between the plurality of gate structures. - View Dependent Claims (20)
-
Specification