Phase-change material (PCM) contacts with slot lower portions and contact dielectric for reducing parasitic capacitance and improving manufacturability in PCM RF switches

• US 10,615,338 B2
• Filed: 11/09/2018
• Issued: 04/07/2020
• Est. Priority Date: 08/14/2018
• Status: Active Grant

• Current Assignee: Newport Fab, LLC (Tower Semiconductor Limited)
• Original Assignee: Newport Fab, LLC (Tower Semiconductor Limited)
• Inventors: Rose, Jefferson E., Slovin, Gregory P., El-Hinnawy, Nabil, DeBar, Michael J., Howard, David J.
• Primary Examiner(s): Booth, Richard A
• Application Number:
  US16/185,620
• Publication Number:
  US 20200058857A1
• Time in Patent Office: 515 Days
• CPC Class Codes: H10N 70/011 Manufacture or treatment of multistable switching devices
• CPC Class Codes: H10N 70/063 by etching of pre-deposited switching material layers, e.g. lithography
• CPC Class Codes: H10N 70/231 based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
• CPC Class Codes: H10N 70/823 adapted for essentially horizontal current flow, e.g. bridge type devices
• CPC Class Codes: H10N 70/826 adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
• CPC Class Codes: H10N 70/828 Current flow limiting means within the switching material region, e.g. constrictions
• CPC Class Codes: H10N 70/8413 adapted for resistive heating
• CPC Class Codes: H10N 70/8613 Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel
• CPC Class Codes: H10N 70/8825 Selenides, e.g. GeSe
• CPC Class Codes: H10N 70/8828 Tellurides, e.g. GeSbTe

Abstract

In fabricating a radio frequency (RF) switch, a phase-change material (PCM) and a heating element underlying an active segment of the PCM are provided. A contact uniformity support layer is formed over the PCM. The PCM and the contact uniformity support layer are patterned. A contact dielectric is formed over the contact uniformity support layer. Slot lower portions of PCM contacts are formed extending through the contact dielectric and through the contact uniformity support layer, and connected to passive segments of the PCM. Wide upper portions of the PCM contacts are formed over the contact dielectric and over the slot lower portions of the PCM contacts. The contact dielectric separates the wide upper portions of the PCM contacts from the heating element so as to reduce parasitic capacitance of the RF switch. The contact uniformity support layer maintains a substantially constant thickness of the passive segments of the PCM.

Claims

1. A radio frequency (RF) switch comprising:

a phase-change material (PCM) and a heating element approximately underlying an active segment of said PCM;

a contact dielectric over said PCM;

PCM contacts comprising slot lower portions and wide upper portions;

said slot lower portions of said PCM contacts extending through said contact dielectric and connected to passive segments of said PCM;

said wide upper portions of said PCM contacts being situated over said contact dielectric and over said slot lower portions of said PCM contacts;

wherein said contact dielectric separates said wide upper portions of said PCM contacts from said heating element so as to reduce a parasitic capacitance of said RF switch.

2. The RF switch of claim 1, wherein said contact dielectric is further situated on sidewalls of said PCM.

3. The RF switch of claim 1, further comprising a thermally conductive and electrically insulating layer under said PCM, wherein a thickness of said contact dielectric is significantly greater than a thickness of said thermally conductive and electrically insulating layer.

4. The RF switch of claim 1, wherein said PCM comprises a material selected from the group consisting of germanium telluride (Ge_XTe_Y), germanium antimony telluride (Ge_XSb_YTe_Z), germanium selenide (Ge_XSe_Y), and any other chalcogenide.

12. The RF switch of claim 1, wherein said contact dielectric comprises a material selected from the group consisting of SiO₂, boron-doped SiO₂, phosphorous-doped SiO₂ and Si_XN_Y.

14. The RF switch of claim 3, wherein said thermally conductive and electrically insulating layer comprises a material selected from the group consisting of aluminum nitride (AlN), aluminum oxide (Al_XO_Y), beryllium oxide (Be_XO_Y), silicon carbide (SiC), diamond, and diamond-like carbon.

5. A radio frequency (RF) switch comprising:

a phase-change material (PCM) and a heating element approximately underlying an active segment of said PCM;

a contact dielectric over said PCM;

PCM contacts comprising slot lower portions and wide upper portions;

said slot lower portions of said PCM contacts extending through said contact dielectric and connected to passive segments of said PCM, wherein a contact uniformity support layer over said PCM maintains a substantially constant thickness of said passive segments of said PCM;

said wide upper portions of said PCM contacts being situated over said contact dielectric and over said slot lower portions of said PCM contacts.

6. The RF switch of claim 5, wherein a thickness of said contact dielectric is significantly greater than a thickness of said contact uniformity support layer.

7. The RF switch of claim 5, wherein said contact uniformity support layer comprises nitride.

8. The RF switch of claim 5, wherein said contact uniformity support layer is a bi-layer that comprises oxide and nitride.

9. The RF switch of claim 5, wherein said contact dielectric is further situated on sidewalls of said PCM.

10. The RF switch of claim 5, further comprising a thermally conductive and electrically insulating layer under said PCM, wherein a thickness of said contact dielectric is significantly greater than a thickness of said thermally conductive and electrically insulating layer.

11. The RF switch of claim 5, wherein said PCM comprises a material selected from the group consisting of germanium telluride (Ge_XTe_Y), germanium antimony telluride (Ge_XSb_YTe_Z), germanium selenide (Ge_XSe_Y), and any other chalcogenide.

13. The RF switch of claim 5, wherein said contact dielectric comprises a material selected from the group consisting of SiO₂, boron-doped SiO₂, phosphorous-doped SiO₂ and Si_XN_Y.

15. The RF switch of claim 10, wherein said thermally conductive and electrically insulating layer comprises a material selected from the group consisting of aluminum nitride (AlN), aluminum oxide (Al_XO_Y), beryllium oxide (Be_XO_Y), silicon carbide (SiC), diamond, and diamond-like carbon.

16. A radio frequency (RF) switch comprising:

a phase-change material (PCM) and a heating element approximately underlying an active segment of said PCM;

a contact dielectric over said PCM;

PCM contacts comprising slot lower portions and wide upper portions;

said slot lower portions of said PCM contacts extending through said contact dielectric and connected to passive segments of said PCM;

said wide upper portions of said PCM contacts being situated over said contact dielectric and over said slot lower portions of said PCM contacts.

17. The RF switch of claim 16, wherein said contact dielectric is further situated on sidewalls of said PCM.

18. The RF switch of claim 16, further comprising a thermally conductive and electrically insulating layer under said PCM.

19. The RF switch of claim 18, wherein said thermally conductive and electrically insulating layer comprises a material selected from the group consisting of aluminum nitride (AlN), aluminum oxide (Al_XO_Y), beryllium oxide (Be_XO_Y), silicon carbide (SiC), diamond, and diamond-like carbon.

20. The RF switch of claim 16, wherein said PCM comprises a material selected from the group consisting of germanium telluride (Ge_XTe_Y), germanium antimony telluride (Ge_XSb_YTe_Z), germanium selenide (Ge_XSe_Y), and any other chalcogenide.

21. The RF switch of claim 16, wherein said contact dielectric comprises a material selected from the group consisting of SiO₂, boron-doped SiO₂, phosphorous-doped SiO₂ and Si_XN_Y.