Method of manufacturing display panel substrate

• US 10,620,468 B2
• Filed: 10/16/2018
• Issued: 04/14/2020
• Est. Priority Date: 10/18/2017
• Status: Active Grant

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Itoh, Toshikatsu, Daitoh, Tohru, Imai, Hajime, Maeda, Masaki, Kitagawa, Hideki, Hara, Yoshihito, Kawasaki, Tatsuya
• Primary Examiner(s): Oh, Jaehwan
• Application Number:
  US16/161,114
• Publication Number:
  US 20190113789A1
• Time in Patent Office: 546 Days
• CPC Class Codes: G02F 1/133357 Planarisation layers
• CPC Class Codes: G02F 1/13338 Input devices, e.g. touch panels
• CPC Class Codes: G02F 1/134309 characterised by their geometrical arrangement
• CPC Class Codes: G02F 1/134372 for fringe field switching [FFS] where the common electrode is not patterned
• CPC Class Codes: G02F 1/13439 characterised by their electrical, optical, physical properties; materials therefor; method of making
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/136295 Materials; Compositions; Manufacture processes
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 21/32133 by chemical means only
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1262 with a particular formation, treatment or coating of the substrate
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT

Abstract

A method of manufacturing a display panel substrate includes a transparent conductive film formation step of forming a transparent conductive film on a flattening film that covers a switching component disposed on a substrate, a metallic film formation step of forming a metallic film so as to cover the transparent conductive film after the transparent conductive film formation step, a line formation step of forming a line by etching the metallic film after the metallic film formation step, and a transparent electrode formation step of forming a transparent electrode that is connected to the line by etching the transparent conductive film after the wire formation step.

Claims

1. A method of manufacturing a display panel substrate, comprising:

a transparent conductive film formation step of forming a transparent conductive film on a flattening film that covers a switching component disposed on a substrate;

a metallic film formation step of forming a metallic film so as to cover the transparent conductive film after the transparent conductive film formation step;

a line formation step of forming a line by etching the metallic film after the metallic film formation step; and

a transparent electrode formation step of forming a transparent electrode that is connected to the line by etching the transparent conductive film after the line formation step.

2. The method of manufacturing a display panel substrate according to claim 1, wherein the transparent electrode is a pixel electrode that is connected to a drain electrode included in the switching component through a contact hole formed in the flattening film.

3. The method of manufacturing a display panel substrate according to claim 2, wherein in the line formation step, the metallic film is etched in a state that a portion of the metallic film covering the contact hole is covered with a resist.

4. The method of manufacturing a display panel substrate according to claim 2, further comprising:

an insulation film formation step of forming an insulation film so as to cover the transparent electrode and the line after the transparent electrode formation step; and

a common electrode formation step of, forming a common electrode on the insulation film after the insulation film formation step.