Curing substrate pretreatment compositions in nanoimprint lithography

• US 10,620,539 B2
• Filed: 03/24/2017
• Issued: 04/14/2020
• Est. Priority Date: 03/31/2016
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Stachowiak, Timothy Brian, Liu, Weijun
• Primary Examiner(s): Rodriguez, Michael P.
• Application Number:
  US15/469,298
• Publication Number:
  US 20170285479A1
• Time in Patent Office: 1,117 Days
• Field of Search: None
• CPC Class Codes: G03F 7/0002 Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
• CPC Class Codes: G03F 7/095 having more than one photosensitive layer G03F7/075 takes precedence
• CPC Class Codes: G03F 7/161 using a previously coated surface, e.g. by stamping or by transfer lamination

Abstract

A nanoimprint lithography method includes disposing a pretreatment composition on a nanoimprint lithography substrate to form a pretreatment coating, and disposing discrete portions of imprint resist on the pretreatment coating, each discrete portion of the imprint resist covering a target area of the nanoimprint lithography substrate. The imprint resist is a polymerizable composition and includes a polymerization initiator. A composite polymerizable coating is formed on the nanoimprint lithography substrate as each discrete portion of the imprint resist spreads beyond its target area. The composite polymerizable coating is contacted with a nanoimprint lithography template. The polymerization initiator is activated, and the composite polymerizable coating is polymerized to yield a composite polymeric layer and an uncured portion of the pretreatment coating on the nanoimprint lithography substrate. After polymerizing the composite polymerizable coating to yield the composite polymeric layer, the uncured portion of the pretreatment coating is polymerized.

Claims

1. A nanoimprint lithography method comprising:

disposing a pretreatment composition on a nanoimprint lithography substrate to form a pretreatment coating on the nanoimprint lithography substrate, wherein the pretreatment composition comprises a polymerizable component;

disposing discrete portions of imprint resist on the pretreatment coating, each discrete portion of the imprint resist covering a target area of the nanoimprint lithography substrate, wherein the imprint resist is a polymerizable composition and comprises a polymerization initiator;

forming a composite polymerizable coating on the nanoimprint lithography substrate as each discrete portion of the imprint resist spreads beyond its target area, wherein the composite polymerizable coating comprises a mixture of the pretreatment composition and the imprint resist;

contacting the composite polymerizable coating with a nanoimprint lithography template;

activating the polymerization initiator;

polymerizing the composite polymerizable coating to yield a composite polymeric layer and an uncured portion of the pretreatment coating on the nanoimprint lithography substrate; and

after polymerizing the composite polymerizable coating to yield the composite polymeric layer, polymerizing the uncured portion of the pretreatment coating,

wherein the polymerization initiator comprises a first photoinitiator, and polymerizing the composite polymerizable coating comprises initiating polymerization of the composite polymerizable coating by irradiating the composite polymerizable coating with UV radiation of a first wavelength, intensity, energy density, and duration.

2. The nanoimprint lithography method of claim 1, wherein the pretreatment composition is substantially free of a polymerization initiator.

3. The nanoimprint lithography method of claim 2, wherein polymerizing the uncured portion of the pretreatment coating comprises irradiating the uncured portion of the pretreatment coating with UV radiation of the first wavelength and a second intensity, energy density, duration, or combination thereof, wherein at least one of the second intensity, energy density, or duration differs from that of the first and is sufficient to initiate autopolymerization of the uncured portion of the pretreatment composition.

4. The nanoimprint lithography method of claim 1, wherein the pretreatment composition comprises a thermal initiator.

5. The nanoimprint lithography method of claim 4, wherein polymerizing the uncured portion of the pretreatment coating comprises heating the uncured portion of the pretreatment coating to a temperature and for a duration sufficient to initiate polymerization of the uncured portion of the pretreatment coating.

6. The nanoimprint lithography method of claim 1, wherein the pretreatment composition comprises the first photoinitiator.

7. The nanoimprint lithography method of claim 6, wherein the imprint resist comprises a photosensitizer.

8. The nanoimprint lithography method of claim 7, wherein polymerizing the uncured portion of the pretreatment coating comprises irradiating the uncured portion of the pretreatment coating with UV radiation of the first wavelength and a second intensity, energy density, duration, or combination thereof, wherein at least one of the second intensity and energy density exceeds that of the first.

9. The nanoimprint lithography method of claim 1, wherein the pretreatment coating comprises a second photoinitiator, wherein the second photoinitiator is different from the first photoinitiator.

10. The nanoimprint lithography method of claim 9, wherein polymerizing the uncured portion of the pretreatment coating comprises irradiating the uncured portion of the pretreatment coating with UV radiation of a second wavelength, wherein the second wavelength is shorter than the first wavelength.

11. The nanoimprint lithography method of claim 9, wherein polymerizing the uncured portion of the pretreatment coating comprises irradiating the uncured portion of the pretreatment coating with UV radiation of a second wavelength and a second intensity, energy density, or duration, wherein the second wavelength is shorter than the first wavelength, and at least one of the second intensity and energy density exceeds that of the first.

12. The nanoimprint lithography method of claim 9, wherein polymerizing the uncured portion of the pretreatment coating comprises irradiating the uncured portion of the pretreatment coating with UV radiation of a second intensity, energy density, or duration, wherein at least one of the second intensity or energy density exceeds that of the first.

13. The nanoimprint lithography method of claim 1, wherein activating the polymerization initiator does not initiate polymerization of the pretreatment composition.