Memory structure with non-straight word line
First Claim
1. A memory structure, comprising:
- a first memory cell, comprising;
a first cell region;
a second cell region;
a digit region disposed between the first and second cell regions;
a first capacitor disposed at the first cell region;
a second capacitor disposed at the second cell region; and
a bit line contact disposed at the digit region of the first memory cell;
a first word line disposed on the first cell region of the first memory cell, wherein the first word line comprises a first portion, a second portion and a third portion, the first portion extends from an end of the second portion along a first direction and the third portion extends from an another end of the second portion along a second direction, and an angle between the first direction and the second direction is less than 180°
, wherein the second portion is disposed between the first capacitor and the bit line contact; and
a second word line disposed on the second region of the first memory cell, wherein the second word line comprises a forth portion, a fifth portion and a sixth portion, the forth portion extends from an end of the fifth portion along a third direction and the sixth portion extends from an another end of the fifth portion along a forth direction, and an angle between the third direction and the forth direction is less than 180°
, wherein the fifth portion is disposed between the second capacitor and the bit line contact, wherein a distance between the second portion and the fifth portion is less than a distance between the first portion and the forth portion and a distance between the third portion and the sixth portion.
1 Assignment
0 Petitions
Accused Products
Abstract
A memory structure includes a first memory cell, a first word line and a second word line. The first word line includes a first portion, a second portion and a third portion. The first portion extends from an end of the second portion along a first direction, and the third portion extends from an another end of the second portion along a second direction. An angle between the first direction and the second direction is less than 180°. The second word line includes a forth portion, a fifth portion and a sixth portion. The forth portion extends from an end of the fifth portion along a third direction, and the sixth portion extends from an another end of the fifth portion along a forth direction. An angle between the third direction and the forth direction is less than 180°.
-
Citations
15 Claims
-
1. A memory structure, comprising:
- a first memory cell, comprising;
a first cell region; a second cell region; a digit region disposed between the first and second cell regions; a first capacitor disposed at the first cell region; a second capacitor disposed at the second cell region; and a bit line contact disposed at the digit region of the first memory cell; a first word line disposed on the first cell region of the first memory cell, wherein the first word line comprises a first portion, a second portion and a third portion, the first portion extends from an end of the second portion along a first direction and the third portion extends from an another end of the second portion along a second direction, and an angle between the first direction and the second direction is less than 180°
, wherein the second portion is disposed between the first capacitor and the bit line contact; anda second word line disposed on the second region of the first memory cell, wherein the second word line comprises a forth portion, a fifth portion and a sixth portion, the forth portion extends from an end of the fifth portion along a third direction and the sixth portion extends from an another end of the fifth portion along a forth direction, and an angle between the third direction and the forth direction is less than 180°
, wherein the fifth portion is disposed between the second capacitor and the bit line contact, wherein a distance between the second portion and the fifth portion is less than a distance between the first portion and the forth portion and a distance between the third portion and the sixth portion. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
- a first memory cell, comprising;
-
10. A memory structure, comprising:
-
a first memory cell having a principle surface, wherein the first memory cell comprises; a first cell region; a second cell region; a digit region between the first and second cell regions; a first capacitor disposed in the first cell region; a second capacitor disposed in the second cell region; and a bit line contact disposed in the digit region; a first curved word line on the first cell region of the first memory cell, and the first curved word line comprises a first turning portion, wherein the first turning portion is disposed between the first capacitor and the bit line contact; and a second curved word line disposed on the second cell region of the first memory cell, and the second curved word line comprises a second turning portion, wherein the second turning portion is disposed between the second capacitor and the bit line contact, wherein a minimal spacing between the first and the second curved word lines is present between the first and the second turning portions, and both the first and the second turning portions are aligned with the first memory cell in a direction perpendicular to the principle surface. - View Dependent Claims (11, 12, 13, 14, 15)
-
Specification