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Nanosheet devices with different types of work function metals

  • US 10,622,264 B2
  • Filed: 05/28/2019
  • Issued: 04/14/2020
  • Est. Priority Date: 03/28/2018
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first stack comprising a first two or more nanowires, a first work function metal on the first two or more nanowires, and a second work function metal in direct contact with and on the first work function metal, wherein the first two or more nanowires are separated by the first work function metal; and

    a second stack comprising a second two or more nanowires and the second work function metal, wherein the second two or more nanowires are separated by the second work function metal.

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