High-voltage GaN high electron mobility transistors with reduced leakage current
First Claim
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1. A high electron-mobility transistor (HEMT) comprising:
- a gallium-nitride conduction layer;
a barrier layer formed over the gallium-nitride conduction layer;
a gate, source, and drain formed over the barrier layer;
a first insulating layer formed in regions between the gate and drain and between the gate and source;
a gallium-oxide layer formed between the barrier layer and the gate; and
a gate-connected field plate electrically connected to the gate and extending beyond edges of the gate toward the drain and source over the first insulating layer.
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Abstract
High-voltage, gallium-nitride HEMTs are described that are capable of withstanding reverse-bias voltages of at least 900 V and, in some cases, in excess of 2000 V with low reverse-bias leakage current. A HEMT may comprise a lateral geometry having a gate, a thin insulating layer formed beneath the gate, a gate-connected field plate, and a source-connected field plate.
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Citations
26 Claims
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1. A high electron-mobility transistor (HEMT) comprising:
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a gallium-nitride conduction layer; a barrier layer formed over the gallium-nitride conduction layer; a gate, source, and drain formed over the barrier layer; a first insulating layer formed in regions between the gate and drain and between the gate and source; a gallium-oxide layer formed between the barrier layer and the gate; and a gate-connected field plate electrically connected to the gate and extending beyond edges of the gate toward the drain and source over the first insulating layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A high electron-mobility transistor (HEMT) comprising:
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a gallium-nitride conduction layer; a barrier layer formed over the gallium-nitride conduction layer; a gate, source, and drain formed over the barrier layer; a first insulating layer formed in regions between the gate and drain and between the gate and source; a gate insulating layer having a thickness between approximately 1 nm and approximately 5 nm formed between the barrier layer and the gate; and a gate-connected field plate electrically connected to the gate and extending beyond edges of the gate toward the drain and source over the first insulating layer. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26)
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Specification