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High-voltage GaN high electron mobility transistors with reduced leakage current

  • US 10,622,467 B2
  • Filed: 11/26/2018
  • Issued: 04/14/2020
  • Est. Priority Date: 04/15/2016
  • Status: Active Grant
First Claim
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1. A high electron-mobility transistor (HEMT) comprising:

  • a gallium-nitride conduction layer;

    a barrier layer formed over the gallium-nitride conduction layer;

    a gate, source, and drain formed over the barrier layer;

    a first insulating layer formed in regions between the gate and drain and between the gate and source;

    a gallium-oxide layer formed between the barrier layer and the gate; and

    a gate-connected field plate electrically connected to the gate and extending beyond edges of the gate toward the drain and source over the first insulating layer.

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