Magnetic memory device and method of manufacturing the same

• US 10,622,545 B2
• Filed: 09/12/2017
• Issued: 04/14/2020
• Est. Priority Date: 03/21/2017
• Status: Active Grant

• Current Assignee: Kioxia Corporation
• Original Assignee: Toshiba Memory Corporation (Kioxia Corporation)
• Inventors: Toko, Masaru, Hosotani, Keiji, Aikawa, Hisanori, Kishi, Tatsuya
• Primary Examiner(s): Smith, Zandra V
• Assistant Examiner(s): Stevenson, Andre C
• Application Number:
  US15/702,403
• Publication Number:
  US 20180277744A1
• Time in Patent Office: 945 Days
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a first non-magnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the first magnetic layer and having a fixed magnetization direction and provided on the first magnetic layer. The second magnetic layer includes a non-magnetic metal including at least one of Mo (molybdenum), Ta (tantalum), W (tungsten), Hf (hafnium), Nb (niobium) and Ti (titanium).

Claims

1. A magnetic memory device comprising:

a first magnetic layer having a variable magnetization direction;

a first non-magnetic layer provided on the first magnetic layer; and

a second magnetic layer provided on the first non-magnetic layer and having a fixed magnetization direction,

wherein the second magnetic layer includes;

a first magnetic region directly provided on the first non-magnetic layer and not including a non-magnetic metal that includes Mo (molybdenum);

a second magnetic region provided on the first magnetic region and including the non-magnetic metal;

a first non-magnetic region provided on the second magnetic region; and

a third magnetic region provided on the first non-magnetic region and not including the non-magnetic metal.

5. The device according to claim 1, wherein the first magnetic layer includes at least one of Co (cobalt), Fe (iron), and boron (B).

6. The device according to claim 1, wherein the first non-magnetic layer includes at least one of MgO (magnesium oxide) and Al₂O₃ (aluminum oxide).

7. The device according to claim 1, wherein the second magnetic layer includes at least one of Co, Fe, and Ni.

8. The device according to claim 1, wherein the second magnetic region includes at least one of a multi-layered film made of Co and Pt (platinum), a multi-layered film made of Co and Ni, a multi-layered film made of Co and Pd (palladium), a CoPt alloy film, a CoNi alloy film, and a CoPd alloy film.

9. The device according to claim 1, further comprising a third magnetic layer provided on the second magnetic layer.

2. A magnetic memory device comprising:

a first magnetic layer having a variable magnetization direction;

a first non-magnetic layer provided on the first magnetic layer; and

a second magnetic layer provided on the first non-magnetic layer and having a fixed magnetization direction,

wherein the second magnetic layer includes;

a first magnetic region that includes;

a third magnetic layer directly provided on the first non-magnetic layer and not including a non-magnetic metal that includes Mo;

a second non-magnetic layer provided on the third magnetic layer and including the non-magnetic metal; and

a fourth magnetic layer provided on the second non-magnetic layer,

a first non-magnetic region provided on the first magnetic region; and

a second magnetic region provided on the first non-magnetic region and not including the non-magnetic metal.

3. The device according to claim 2, wherein the fourth magnetic layer includes the non-magnetic metal.

4. The device according to claim 2, wherein the first magnetic region further includes:

a third non-magnetic layer provided on the fourth magnetic layer and not including the non-magnetic metal; and

a fifth magnetic layer provided on the third non-magnetic layer.

18. The device according to claim 2, wherein the first magnetic layer includes at least one of Co, Fe, and B.

19. The device according to claim 2, wherein the first non-magnetic layer includes at least one of MgO and Al₂O₃.

20. The device according to claim 2, wherein the second magnetic layer includes at least one of Co, Fe, and Ni.

10. A magnetic memory device comprising:

a first magnetic layer having a variable magnetization direction;

a first non-magnetic layer provided on the first magnetic layer; and

a second magnetic layer provided on the first non-magnetic layer and having a fixed magnetization direction,

wherein the second magnetic layer includes;

a first magnetic region directly provided on the first non-magnetic layer and not including a non-magnetic metal that includes Mo;

a second magnetic region provided on the third magnetic region and including the non-magnetic metal;

a first non-magnetic region provided on the first magnetic region; and

a third magnetic region provided on the first non-magnetic region and not including the non-magnetic metal, and

a concentration of the non-magnetic metal in an interface between the first magnetic region and the second magnetic layer is lower than a concentration of the non-magnetic metal in an interface between the second magnetic region and the first non-magnetic region.

11. The device according to claim 10, wherein a concentration of the non-magnetic metal in the second magnetic region increases from the interface between the first magnetic region and the second magnetic layer toward the interface between the second magnetic region and the first non-magnetic region.

12. The device according to claim 10, wherein the second magnetic layer includes at least one of Co, Fe, and Ni.

13. The device according to claim 10, wherein the second magnetic region includes at least one of a multi-layered film made of Co and Pt, a multi-layered film made of Co and Ni, a multi-layered film made of Co and Pd, a CoPt alloy film, a CoNi alloy film, and a CoPd alloy film.

16. The device according to claim 10, wherein the first magnetic layer includes at least one of Co, Fe, and B.

17. The device according to claim 10, wherein the first non-magnetic layer includes at least one of MgO and Al₂O₃.

14. A method of manufacturing a magnetic memory device comprising:

forming a first magnetic layer having a variable magnetization direction;

forming a first non-magnetic layer on the first magnetic layer; and

forming a second magnetic layer on the first non-magnetic layer, the second magnetic layer having a fixed magnetization direction,

wherein the forming the second magnetic layer comprises;

forming a first magnetic region directly on the first non-magnetic layer, the first magnetic region not including that includes Mo;

forming a second magnetic region including the non-magnetic metal on the first magnetic region;

forming a first non-magnetic region on the second magnetic region; and

forming a third magnetic region not including the non-magnetic metal on the first non-magnetic region.

15. A method of manufacturing a magnetic memory device comprising:

forming a first magnetic layer having a variable magnetization direction;

forming a first non-magnetic layer on the first magnetic layer; and

forming a second magnetic layer on the first non-magnetic layer, the second magnetic layer having a fixed magnetization direction,

wherein the forming the second magnetic layer comprises;

forming a first magnetic region;

forming a first non-magnetic region on the first magnetic region; and

forming a second magnetic region not including the non-magnetic metal on the first non-magnetic region,

wherein the forming the first magnetic region that includes;

forming a third magnetic layer not including the non-magnetic metal on the first non-magnetic region;

forming a second non-magnetic layer including the non-magnetic metal on the third magnetic layer; and

removing the second non-magnetic layer and a part of the third magnetic layer and introducing the non-magnetic metal to the third magnetic layer.