Magnetic memory device and method of manufacturing the same
First Claim
Patent Images
1. A magnetic memory device comprising:
- a first magnetic layer having a variable magnetization direction;
a first non-magnetic layer provided on the first magnetic layer; and
a second magnetic layer provided on the first non-magnetic layer and having a fixed magnetization direction,wherein the second magnetic layer includes;
a first magnetic region directly provided on the first non-magnetic layer and not including a non-magnetic metal that includes Mo (molybdenum);
a second magnetic region provided on the first magnetic region and including the non-magnetic metal;
a first non-magnetic region provided on the second magnetic region; and
a third magnetic region provided on the first non-magnetic region and not including the non-magnetic metal.
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Abstract
According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a first non-magnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the first magnetic layer and having a fixed magnetization direction and provided on the first magnetic layer. The second magnetic layer includes a non-magnetic metal including at least one of Mo (molybdenum), Ta (tantalum), W (tungsten), Hf (hafnium), Nb (niobium) and Ti (titanium).
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Citations
20 Claims
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1. A magnetic memory device comprising:
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a first magnetic layer having a variable magnetization direction; a first non-magnetic layer provided on the first magnetic layer; and a second magnetic layer provided on the first non-magnetic layer and having a fixed magnetization direction, wherein the second magnetic layer includes; a first magnetic region directly provided on the first non-magnetic layer and not including a non-magnetic metal that includes Mo (molybdenum); a second magnetic region provided on the first magnetic region and including the non-magnetic metal; a first non-magnetic region provided on the second magnetic region; and a third magnetic region provided on the first non-magnetic region and not including the non-magnetic metal. - View Dependent Claims (5, 6, 7, 8, 9)
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2. A magnetic memory device comprising:
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a first magnetic layer having a variable magnetization direction; a first non-magnetic layer provided on the first magnetic layer; and a second magnetic layer provided on the first non-magnetic layer and having a fixed magnetization direction, wherein the second magnetic layer includes; a first magnetic region that includes; a third magnetic layer directly provided on the first non-magnetic layer and not including a non-magnetic metal that includes Mo; a second non-magnetic layer provided on the third magnetic layer and including the non-magnetic metal; and a fourth magnetic layer provided on the second non-magnetic layer, a first non-magnetic region provided on the first magnetic region; and a second magnetic region provided on the first non-magnetic region and not including the non-magnetic metal. - View Dependent Claims (3, 4, 18, 19, 20)
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10. A magnetic memory device comprising:
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a first magnetic layer having a variable magnetization direction; a first non-magnetic layer provided on the first magnetic layer; and a second magnetic layer provided on the first non-magnetic layer and having a fixed magnetization direction, wherein the second magnetic layer includes; a first magnetic region directly provided on the first non-magnetic layer and not including a non-magnetic metal that includes Mo; a second magnetic region provided on the third magnetic region and including the non-magnetic metal; a first non-magnetic region provided on the first magnetic region; and a third magnetic region provided on the first non-magnetic region and not including the non-magnetic metal, and a concentration of the non-magnetic metal in an interface between the first magnetic region and the second magnetic layer is lower than a concentration of the non-magnetic metal in an interface between the second magnetic region and the first non-magnetic region. - View Dependent Claims (11, 12, 13, 16, 17)
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14. A method of manufacturing a magnetic memory device comprising:
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forming a first magnetic layer having a variable magnetization direction; forming a first non-magnetic layer on the first magnetic layer; and forming a second magnetic layer on the first non-magnetic layer, the second magnetic layer having a fixed magnetization direction, wherein the forming the second magnetic layer comprises; forming a first magnetic region directly on the first non-magnetic layer, the first magnetic region not including that includes Mo; forming a second magnetic region including the non-magnetic metal on the first magnetic region; forming a first non-magnetic region on the second magnetic region; and forming a third magnetic region not including the non-magnetic metal on the first non-magnetic region.
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15. A method of manufacturing a magnetic memory device comprising:
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forming a first magnetic layer having a variable magnetization direction; forming a first non-magnetic layer on the first magnetic layer; and forming a second magnetic layer on the first non-magnetic layer, the second magnetic layer having a fixed magnetization direction, wherein the forming the second magnetic layer comprises; forming a first magnetic region; forming a first non-magnetic region on the first magnetic region; and forming a second magnetic region not including the non-magnetic metal on the first non-magnetic region, wherein the forming the first magnetic region that includes; forming a third magnetic layer not including the non-magnetic metal on the first non-magnetic region; forming a second non-magnetic layer including the non-magnetic metal on the third magnetic layer; and removing the second non-magnetic layer and a part of the third magnetic layer and introducing the non-magnetic metal to the third magnetic layer.
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Specification