Semiconductor chips and systems having phase-change material (PCM) switches integrated with micro-electrical-mechanical systems (MEMS) and/or resonators

• US 10,622,560 B2
• Filed: 05/03/2019
• Issued: 04/14/2020
• Est. Priority Date: 08/14/2018
• Status: Active Grant

• Current Assignee: Newport Fab, LLC (Tower Semiconductor Limited)
• Original Assignee: Newport Fab, LLC (Tower Semiconductor Limited)
• Inventors: Howard, David J., El-Hinnawy, Nabil
• Primary Examiner(s): Seven, Evren
• Application Number:
  US16/402,630
• Publication Number:
  US 20200058865A1
• Time in Patent Office: 347 Days
• Field of Search: None
• CPC Class Codes: B81B 7/04 Networks or arrays of similar microstructural devices
• CPC Class Codes: H10B 63/10 Phase change RAM [PCRAM, PRAM] devices
• CPC Class Codes: H10N 70/021 Formation of switching materials, e.g. deposition of layers
• CPC Class Codes: H10N 70/041 Modification of switching materials after formation, e.g. doping shaping H10N70/061
• CPC Class Codes: H10N 70/231 based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
• CPC Class Codes: H10N 70/823 adapted for essentially horizontal current flow, e.g. bridge type devices
• CPC Class Codes: H10N 70/8413 adapted for resistive heating
• CPC Class Codes: H10N 70/8613 Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel
• CPC Class Codes: H10N 70/8616 Thermal insulation means
• CPC Class Codes: H10N 70/8825 Selenides, e.g. GeSe
• CPC Class Codes: H10N 70/8828 Tellurides, e.g. GeSbTe
• CPC Class Codes: H10N 79/00 Integrated devices, or assemblies of multiple devices, comprising at least one solid-state element covered by group H10N70/00 ReRAM devices H10B63/00; PCRAM devices H10B63/10

Abstract

A semiconductor chip or system, such as a multi-chip module (MCM), a system-in-package (SiP), and/or a printed circuit board (PCB) module, includes a substrate, a resonator and/or a micro-electrical-mechanical system (MEMS), and a phase-change material (PCM) switch. The PCM switch includes a hearing element, a PCM situated over the heating element, and PCM contacts connected to passive segments of the PCM. The heating element is transverse to the PCM and approximately defines an active segment of the PCM. The PCM contacts are electrically connected to the resonator and/or the MEMS in a shared routing region of the semiconductor chip. The PCM switch is configured to engage or disengage the resonator and/or the MEMS. In one approach, a plurality of PCM switches are capable of reconfiguring an array of resonators and/or an array of MEMS. In another approach, a redundant PCM switch is electrically connected to a redundant resonator and/or a redundant MEMS.

Claims

1. A semiconductor chip comprising:

a substrate;

a resonator and/or a micro-electrical-mechanical system (MEMS);

a phase-change material (PCM) switch comprising;

a heating element;

a thermally conductive and electrically insulating material over said heating element;

a PCM situated over said thermally conductive and electrically insulating material;

PCM contacts connected to passive segments of said PCM;

said heating element transverse to said PCM and approximately defining an active segment of said PCM;

one of said PCM contacts of said PCM switch electrically connected to said resonator and/or said MEMS in said semiconductor chip;

said PCM switch configured to engage or disengage said resonator and/or said MEMS.

2. The semiconductor chip of claim 1, wherein said resonator and/or said MEMS is one of a radio frequency (RF) filter, an oscillator, a microphone, a speaker, and a pressure sensor.

3. The semiconductor chip of claim 1, wherein said PCM is selected from the group consisting of germanium telluride (Ge_XTe_Y), germanium antimony telluride (Ge_XSb_YTe_Z), germanium selenide (Ge_XSe_Y), and any other chalcogenide.

4. The semiconductor chip of claim 1, wherein said resonator and/or said MEMS is engaged when said PCM is in a crystalline phase.

5. A semiconductor chip comprising:

a substrate;

an array of resonators and/or an array of micro-electrical-mechanical systems (MEMS);

a plurality of phase-change material (PCM) switches, each comprising;

a heating element;

a thermally conductive and electrically insulating material over said heating element;

a PCM situated over said thermally conductive and electrically insulating material;

PCM contacts connected to passive segments of said PCM;

said heating element transverse to said PCM and approximately defining an active segment of said PCM;

each of said plurality of PCM switches electrically connected to a resonator in said array of resonators and/or to a MEMS in said array of MEMS;

said plurality of PCM switches capable of reconfiguring said array of resonators and/or said array of MEMS.

6. The semiconductor chip of claim 5, wherein said plurality of PCM switches are connected to a microcontroller (MCU) or an application specific integrated circuit (ASIC).

7. The semiconductor chip of claim 5, further comprising another plurality of PCM switches each electrically connected to another resonator in another array of resonators and/or to another MEMS in another array of MEMS, said plurality of PCM switches and said another plurality of PCM switches capable of providing averaging signals.

8. The semiconductor chip of claim 7, wherein each resonator in said array of resonators and/or each MEMS said array of MEMS is substantially co-located with a corresponding resonator in said another array of resonators and/or with a corresponding MEMS in said another array of MEMS.

9. The semiconductor chip of claim 5, wherein said array of resonators and/or said array of MEMS comprise radio frequency (RF) filters, oscillators, microphones, speakers, or pressure sensors.

10. The semiconductor chip of claim 5, wherein said PCM is selected from the group consisting of germanium telluride (Ge_XTe_Y), germanium antimony telluride (Ge_XSb_YTe_Z), germanium selenide (Ge_XSe_Y), and any other chalcogenide.

11. The semiconductor chip of claim 5, wherein a resonator in said array of resonators and/or a MEMS in said array of MEMS is engaged when said PCM is in a crystalline phase.

12. A semiconductor chip comprising:

a substrate;

a primary resonator and/or a primary micro-electrical-mechanical system (MEMS);

a redundant resonator and/or a redundant micro-electrical-mechanical system (MEMS);

a primary and a redundant phase-change material (PCM) switch, each comprising;

a heating element;

a thermally conductive and electrically insulating material over said heating element;

a PCM situated over said thermally conductive and electrically insulating material;

PCM contacts connected to passive segments of said PCM;

said heating element transverse to said PCM and approximately defining an active segment of said PCM;

on of said PCM contacts of said primary PCM switch electrically connected to said primary resonator and/or said primary MEMS;

one of said PCM contacts of said redundant PCM switch electrically connected to said redundant resonator and/or said redundant MEMS.

13. The semiconductor chip of claim 12, wherein said redundant PCM switch is capable of engaging said redundant resonator and/or said redundant MEMS in response to a fault in said primary resonator and/or said primary MEMS.

14. The semiconductor chip of claim 12, wherein said primary PCM switch is capable of disengaging said primary resonator and/or said primary MEMS in response to a fault in said primary resonator and/or said primary MEMS.

15. The semiconductor chip of claim 12, wherein said primary resonator and/or said primary MEMS and said redundant resonator and/or said redundant MEMS are substantially co-located.

16. The semiconductor chip of claim 12, wherein said primary resonator and/or said primary MEMS and said redundant resonator and/or said redundant MEMS comprise radio frequency (RF) filters, oscillators, microphones, speakers, or pressure sensors.

17. The semiconductor chip of claim 12, wherein said PCM is selected from the group consisting of germanium telluride (Ge_XTe_Y), germanium antimony telluride (Ge_XSb_YTe_Z), germanium selenide (Ge_XSe_Y), and any other chalcogenide.