Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink
First Claim
1. An RF switch circuit for switching RF signals, comprising:
- (A) a first RF port;
(B) a second RF port; and
(C) a pass transistor grouping having a first node coupled to the first RF port and a second node coupled to the second RF port, the pass transistor grouping comprising a first two or more accumulated charge control N-type MOSFETs (ACC N-MOSFETs) arranged in a stacked configuration; and
wherein;
(a) each ACC N-MOSFET of the first two or more ACC N-MOSFETs comprises;
(i) a first gate, a first drain, a first source, a first gate oxide layer, and a first body, wherein the first gate oxide layer is positioned between the first gate and the first body; and
(ii) a first accumulated charge sink (ACS) region connected to the first body;
(b) the pass transistor grouping configured to couple the first RF port with the second RF port in a pass transistor grouping first state;
(c) the pass transistor grouping configured to isolate the first RF port from the second RF port in a pass transistor grouping second state, and wherein the pass transistor grouping is configured to have a first bias voltage applied to the first ACS region to remove or otherwise control, via the first ACS region, charge that, without the first bias voltage applied, would accumulate in the first body in the pass transistor grouping second state; and
(d) the first bias voltage being substantially negative with respect to ground, the first drain and the first source.
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Abstract
A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.
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Citations
25 Claims
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1. An RF switch circuit for switching RF signals, comprising:
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(A) a first RF port; (B) a second RF port; and (C) a pass transistor grouping having a first node coupled to the first RF port and a second node coupled to the second RF port, the pass transistor grouping comprising a first two or more accumulated charge control N-type MOSFETs (ACC N-MOSFETs) arranged in a stacked configuration; and
wherein;(a) each ACC N-MOSFET of the first two or more ACC N-MOSFETs comprises; (i) a first gate, a first drain, a first source, a first gate oxide layer, and a first body, wherein the first gate oxide layer is positioned between the first gate and the first body; and
(ii) a first accumulated charge sink (ACS) region connected to the first body;(b) the pass transistor grouping configured to couple the first RF port with the second RF port in a pass transistor grouping first state; (c) the pass transistor grouping configured to isolate the first RF port from the second RF port in a pass transistor grouping second state, and wherein the pass transistor grouping is configured to have a first bias voltage applied to the first ACS region to remove or otherwise control, via the first ACS region, charge that, without the first bias voltage applied, would accumulate in the first body in the pass transistor grouping second state; and (d) the first bias voltage being substantially negative with respect to ground, the first drain and the first source. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 21, 23, 24, 25)
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11. A single-pole, multiple-throw RF switch comprising:
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a plurality of pass transistor groupings i, i=1, 2, . . . N, with i being two or greater;
a plurality of corresponding first RF ports i, i=1, 2, . . . N, with i being two or greater;a second RF port; wherein; two or more pass transistor groupings of the plurality of pass transistor groupings to respectively couple two or more corresponding first RF ports with the second RF port; the plurality of pass transistor groupings respectively comprises first two or more ACC N-MOSFETs arranged in a stacked configuration; each ACC N-MOSFET of respective first two or more ACC N-MOSFETs comprises a first body, a first gate, a first drain, a first source and a first gate oxide layer, wherein the first gate oxide layer is positioned between the first gate and the first body, and a first accumulated charge sink (ACS) region connected to the first body; one of the two or more pass transistor groupings, i, configured to couple one corresponding first RF port, i, with the second RF port in a pass transistor grouping first state; other of the two or more pass transistor groupings, other than the one of the two or more pass transistor groupings, i, configured to isolate the two or more corresponding first RF ports, other than the one corresponding first RF port, i, from the second RF port in a pass transistor grouping second state, and wherein the other pass transistor groupings of the two or more pass transistor groupings, other than the one of the two or more pass transistor groupings, i, are configured to have a first bias voltage applied to the first ACS region to remove or otherwise control, via the first ACS region, charge that, without the first bias voltage applied, would accumulate in the first body in the pass transistor grouping second state; the first bias voltage being substantially negative with respect to ground, the first drain and the first source. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 22)
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Specification