Piezoelectric acoustic MEMS transducer and fabrication method thereof

• US 10,623,866 B2
• Filed: 04/19/2019
• Issued: 04/14/2020
• Est. Priority Date: 04/20/2018
• Status: Active Grant

• Current Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Original Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Inventors: Cerini, Fabrizio, Adorno, Silvia, Vercesi, Federico
• Primary Examiner(s): Yu, Norman
• Application Number:
  US16/389,833
• Publication Number:
  US 20190327562A1
• Time in Patent Office: 361 Days
• Field of Search: 381173, 381190, 381114, 381175, 438 53
• CPC Class Codes: B81B 2201/0257 Microphones or microspeakers
• CPC Class Codes: B81B 3/0021 Transducers for transforming electrical into mechanical energy or vice versa dynamo-electric machines H02K99/00; electrostatic machines H02N1/00; piezoelectric devices H10N30/00
• CPC Class Codes: B81C 1/00158 Diaphragms, membranes manufacture process for semi-permeable inorganic membranes B01D67/0039
• CPC Class Codes: B81C 2201/0105 Sacrificial layer
• CPC Class Codes: H04R 17/02 Microphones
• CPC Class Codes: H04R 2201/003 Mems transducers or their use of the electrostatic type H04R19/005
• CPC Class Codes: H04R 2440/07 Loudspeakers using bending wave resonance and pistonic motion to generate sound
• CPC Class Codes: H04R 2499/11 Transducers incorporated or for use in hand-held devices, e.g. mobile phones, PDA's, camera's
• CPC Class Codes: H04R 31/00 Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor manufacture of microstructural arrangements of deformable or non-deformable structures in general B81C1/00182
• CPC Class Codes: H10N 30/302 Sensors

Abstract

A piezoelectric MEMS transducer formed in a body of semiconductor material, which has a central axis and a peripheral area and comprises a plurality of beams, transverse to the central axis and having a first end, coupled to the peripheral area of the body, and a second end, facing the central axis; a membrane, transverse to the central axis and arranged underneath the plurality of beams; and a pillar, parallel to the central axis and rigid with the second end of the beams and to the membrane. The MEMS transducer further comprises a plurality of piezoelectric sensing elements arranged on the plurality of beams.

Claims

1. A piezoelectric MEMS transducer, comprising:

a body of semiconductor material having a central axis and a peripheral area, the body including;

a plurality of beams extending transversely to the central axis and each having a first end and a second end, the first ends of the beams being coupled to the peripheral area of the body and the second ends facing the central axis;

a membrane extending transversely to the central axis and underneath the plurality of beams; and

a pillar extending parallel to the central axis and rigid with respect to the second ends of the beams and the membrane; and

a plurality of piezoelectric sensing elements arranged on the plurality of beams.

2. The transducer according to claim 1, wherein the plurality of piezoelectric sensing elements comprises piezoelectric sensing elements arranged at the first ends of the beams, respectively.

3. The transducer according to claim 1, wherein the plurality of piezoelectric sensing elements comprises piezoelectric sensing elements arranged at the second ends of the beams, respectively.

4. The transducer according to claim 1, wherein the piezoelectric sensing elements extend each along a respective beam, between the first end and the second end.

5. The transducer according to claim 1, wherein each beam includes an opening formed between the first end and the second end of the beam.

6. The transducer according to claim 1, further comprising a ventilation opening that passes through the membrane, the ventilation opening extending parallel to the central axis.

7. The transducer according to claim 6, wherein the ventilation opening has an annular or polygonal shape.

8. The transducer according to claim 6, wherein the ventilation opening extends through the pillar.

9. The transducer according to claim 6, wherein the membrane has a first membrane surface and a second membrane surface, the first membrane surface facing the plurality of beams, the transducer further comprising a projection that extends from the second membrane surface and defines a sidewall of the ventilation opening.

10. The transducer according to claim 1, wherein the membrane comprises a reinforcement structure projecting monolithically.

11. The transducer according to claim 10, wherein the membrane has a first membrane surface and a second membrane surface, the first membrane surface facing the plurality of beams, and the reinforcement structure comprises a plurality of projections that extend from the second membrane surface of the membrane and has, in particular, a cobweb shape.

12. The transducer according to claim 1, wherein the membrane has a first membrane surface and a second membrane surface, the first membrane surface facing the plurality of beams, and the membrane comprises an arrest element that extend from the second membrane surface.

13. The transducer according to claim 1, wherein:

the body comprises a substrate and a sensitive region,

the substrate is traversed by a through cavity,

the membrane, the plurality of beams, and the pillar are formed in the sensitive region, and

the membrane is suspended over the through cavity.

14. The transducer according to claim 1, wherein the piezoelectric sensing elements are bimorphous.

15. An electronic device comprising:

a piezoelectric MEMS transducer that includes;

a body of semiconductor material having a central axis (S) and a peripheral area, the body including;

a plurality of beams extending transversely to the central axis and each having a first end and a second end, the first ends of the beams being coupled to the peripheral area of the body and the second ends facing the central axis;

a membrane extending transversely to the central axis and underneath the plurality of beams; and

a pillar extending parallel to the central axis and rigid with respect to the second ends of the beams and the membrane; and

a plurality of piezoelectric sensing elements arranged on the plurality of beams;

a signal-processing block coupled to the transducer;

a microprocessor, coupled to the signal-processing block;

a memory coupled to the microprocessor; and

an input/output unit, coupled to the microprocessor.

16. The electronic device according to claim 15, wherein the transducer includes a ventilation opening that passes through the membrane, the ventilation opening extending parallel to the central axis.

17. The electronic device according to claim 16, wherein the membrane has a first membrane surface and a second membrane surface, the first membrane surface facing the plurality of beams, and the transducer comprises a projection that extends from the second membrane surface and defines a sidewall of the ventilation opening.

18. A method for fabricating a MEMS transducer, comprising:

forming, in a body of semiconductor material, a membrane having a first and a second membrane surface;

forming a pillar of semiconductor material, projecting transversely to the first membrane surface;

forming a plurality of beams, extending in a direction transverse to the pillar and on the membrane, the beams each having a first end and a second end, the first ends of the beams being coupled to a peripheral area of the body and the second ends being fixed with respect to the pillar; and

forming a plurality of piezoelectric sensing elements on the plurality of beams.

19. The method according to claim 18, wherein forming the membrane comprises:

forming a first sacrificial layer of dielectric material on a substrate of semiconductor material;

forming first anchorage openings in the first sacrificial layer in the peripheral area of the body; and

forming a membrane layer of semiconductor material on the first sacrificial layer, the membrane layer filling the first anchorage openings and forming first anchorage elements.

20. The method according to claim 19, wherein forming the membrane comprises:

before forming the first anchorage openings, forming a plurality of reinforcement definition openings in the first sacrificial layer;

forming a second sacrificial layer on the first sacrificial layer, the second sacrificial layer extending within the plurality of reinforcement definition openings; and

depositing the membrane layer on the second sacrificial layer, to form the membrane and a reinforcement structure integral with respect to the membrane.

21. The method according to claim 19, wherein forming the pillar and the plurality of beams comprises:

after forming the membrane layer, forming a third sacrificial layer on the membrane layer;

forming second anchorage openings in the third sacrificial layer in the peripheral area of the body;

forming a pillar opening extending through the third sacrificial layer; and

forming a beam layer of semiconductor material on the third sacrificial layer, the beam layer filling the second anchorage openings and the pillar opening and forming the second anchorage elements and the pillar.

22. The method according to claim 18, further comprising forming a ventilation opening including selectively removing the membrane layer.

23. The method according to claim 22, wherein forming a ventilation opening further comprises selectively removing a portion of the pillar, thereby the ventilation opening passes through the membrane and the pillar.

24. The method according to claim 21, further comprising:

selectively removing a portion of the substrate underneath the first sacrificial layer so as to form a through cavity in the substrate, removing the first sacrificial layer; and

removing the second sacrificial layer to release the membrane, the beams, and the pillar.

25. The method according to claim 21, comprising, before forming the membrane, forming an arrest element monolithic with the membrane.