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Semiconductor memory device and method for forming the same

  • US 10,629,614 B2
  • Filed: 12/14/2018
  • Issued: 04/21/2020
  • Est. Priority Date: 07/12/2018
  • Status: Active Grant
First Claim
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1. A semiconductor memory device comprising:

  • a substrate defined with a first cell region, a slimming region extending from the first cell region in a first direction and a second cell region extending from the slimming region in the first direction;

    first and second electrode structures each including a plurality of electrodes which are stacked on the substrate, and disposed to be separated from each other in a second direction crossing with the first direction, with a slit interposed therebetween; and

    a plurality of step-shaped holes disposed in the slimming region along the first direction, and respectively formed in the first and second electrode structures,wherein each of the step-shaped holes includes first step structures which face each other in the first direction, are symmetrical to each other and are separated by the slit and second step structures which face each other in the second direction and are symmetrical to each other.

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