Resistor, display device, and electronic device

• US 10,629,625 B2
• Filed: 03/08/2019
• Issued: 04/21/2020
• Est. Priority Date: 12/25/2012
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Fan, Bo
• Application Number:
  US16/296,297
• Publication Number:
  US 20190273100A1
• Time in Patent Office: 410 Days
• Field of Search: 257 43
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

To provide a novel resistor. To provide a display device having a novel structure that can improve its reliability. To provide a display device having a novel structure that can reduce electrostatic discharge damages. The resistor includes a semiconductor layer and an insulating layer formed over the semiconductor layer, and the semiconductor layer is an oxide represented by an In-M-Zn oxide that contains at least indium (In), zinc (Zn), and M (M is a metal such as Al, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf) and the insulating layer contains at least hydrogen.

Claims

1. A semiconductor device comprising:

a pixel portion comprising a transistor;

a gate line electrically connected to the pixel portion; and

a protection circuit electrically connected to the gate line,

wherein the transistor comprises a first oxide semiconductor layer,

wherein the protection circuit comprises a resistor,

wherein the resistor comprises a second oxide semiconductor layer, an insulating film, a first wiring, and a second wiring,

wherein each of the first wiring and the second wiring is in direct contact with a top surface of the second oxide semiconductor layer,

wherein the second oxide semiconductor layer comprises a first region,

wherein a resistivity of the first region of the second oxide semiconductor layer is different from a resistivity of the first oxide semiconductor layer,

wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises indium and zinc,

wherein the insulating film comprises hydrogen, and

wherein the insulating film is over the second oxide semiconductor layer and in direct contact with a top surface of the first region of the second oxide semiconductor layer.

2. The semiconductor device according to claim 1, wherein the insulating film is a silicon nitride film.

3. The semiconductor device according to claim 1, wherein the second oxide semiconductor layer comprises hydrogen.

4. The semiconductor device according to claim 1,

wherein the second oxide semiconductor layer comprises a microcrystalline region,

wherein a plurality spots arranged circumferentially are observed in an electron diffraction pattern of the microcrystalline region with a beam diameter of 5 nmφ

or more and 10 nmφ

or less, and

wherein no spots are observed in an electron diffraction pattern of the microcrystalline region with a beam diameter of 300 nmφ

or more.

5. The semiconductor device according to claim 1,

wherein the second oxide semiconductor layer comprises a second region, and

wherein a resistivity of the second region is higher than or equal to 1×

10<sup>−

3</sup> Ω

cm.

6. The semiconductor device according to claim 1,

wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer further comprises a metal selected from the group consisting of Al, Ga, Ge, Y, Zr, Sn, La, Ce, and Hf.

7. A semiconductor device comprising:

a first conductive layer over a substrate;

a first insulating film over the first conductive layer;

a first oxide semiconductor layer and a second oxide semiconductor layer over and in direct contact with the first insulating film;

a source electrode layer and a drain electrode layer over the first oxide semiconductor layer;

a second insulating film over the second oxide semiconductor layer; and

a second conductive layer over the second insulating film,

wherein the second conductive layer and the second oxide semiconductor layer overlap with each other with the second insulating film therebetween,

wherein the second oxide semiconductor layer comprises a first region,

wherein a resistivity of the first region of the second oxide semiconductor layer is lower than a resistivity of a second region of the first oxide semiconductor layer, and

wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises indium and zinc.

8. The semiconductor device according to claim 7, wherein the first oxide semiconductor layer and the second oxide semiconductor layer are formed in a same process.

9. The semiconductor device according to claim 7, wherein the second insulating film is a silicon nitride film.

10. The semiconductor device according to claim 7, wherein the second oxide semiconductor layer comprises hydrogen.

11. The semiconductor device according to claim 7,

wherein the second oxide semiconductor layer comprises a microcrystalline region,

wherein a plurality spots arranged circumferentially are observed in an electron diffraction pattern of the microcrystalline region with a beam diameter of 5 nmφ

or more and 10 nmφ

or less, and

wherein no spots are observed in an electron diffraction pattern of the microcrystalline region with a beam diameter of 300 nmφ

or more.

12. The semiconductor device according to claim 7,

wherein the resistivity of the second region of the second oxide semiconductor layer is higher than or equal to 1×

10<sup>−

3</sup> Ω

cm.

13. The semiconductor device according to claim 7,

wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer further comprises a metal selected from the group consisting of Al, Ga, Ge, Y, Zr, Sn, La, Ce, and Hf.

14. A semiconductor device comprising:

a pixel portion;

a gate driver electrically connected to the pixel portion through a gate line; and

a protection circuit electrically connected to the gate line and located between the pixel portion and the gate driver,

wherein the pixel portion comprises a transistor whose channel formation region comprises an oxide semiconductor comprising indium, gallium, and zinc,

wherein the protection circuit comprises a resistor,

wherein the resistor comprises;

an oxide semiconductor layer electrically connected to a first conductive layer and a second conductive layer, the oxide semiconductor layer comprising indium, gallium, and zinc;

a first insulating layer over the oxide semiconductor layer; and

a second insulating layer over the first insulating layer, the second insulating layer being in contact with a top surface of the oxide semiconductor layer through an opening portion of the first insulating layer.