Resistor, display device, and electronic device
First Claim
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1. A semiconductor device comprising:
- a pixel portion comprising a transistor;
a gate line electrically connected to the pixel portion; and
a protection circuit electrically connected to the gate line,wherein the transistor comprises a first oxide semiconductor layer,wherein the protection circuit comprises a resistor,wherein the resistor comprises a second oxide semiconductor layer, an insulating film, a first wiring, and a second wiring,wherein each of the first wiring and the second wiring is in direct contact with a top surface of the second oxide semiconductor layer,wherein the second oxide semiconductor layer comprises a first region,wherein a resistivity of the first region of the second oxide semiconductor layer is different from a resistivity of the first oxide semiconductor layer,wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises indium and zinc,wherein the insulating film comprises hydrogen, andwherein the insulating film is over the second oxide semiconductor layer and in direct contact with a top surface of the first region of the second oxide semiconductor layer.
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Abstract
To provide a novel resistor. To provide a display device having a novel structure that can improve its reliability. To provide a display device having a novel structure that can reduce electrostatic discharge damages. The resistor includes a semiconductor layer and an insulating layer formed over the semiconductor layer, and the semiconductor layer is an oxide represented by an In-M-Zn oxide that contains at least indium (In), zinc (Zn), and M (M is a metal such as Al, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf) and the insulating layer contains at least hydrogen.
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Citations
14 Claims
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1. A semiconductor device comprising:
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a pixel portion comprising a transistor; a gate line electrically connected to the pixel portion; and a protection circuit electrically connected to the gate line, wherein the transistor comprises a first oxide semiconductor layer, wherein the protection circuit comprises a resistor, wherein the resistor comprises a second oxide semiconductor layer, an insulating film, a first wiring, and a second wiring, wherein each of the first wiring and the second wiring is in direct contact with a top surface of the second oxide semiconductor layer, wherein the second oxide semiconductor layer comprises a first region, wherein a resistivity of the first region of the second oxide semiconductor layer is different from a resistivity of the first oxide semiconductor layer, wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises indium and zinc, wherein the insulating film comprises hydrogen, and wherein the insulating film is over the second oxide semiconductor layer and in direct contact with a top surface of the first region of the second oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a first conductive layer over a substrate; a first insulating film over the first conductive layer; a first oxide semiconductor layer and a second oxide semiconductor layer over and in direct contact with the first insulating film; a source electrode layer and a drain electrode layer over the first oxide semiconductor layer; a second insulating film over the second oxide semiconductor layer; and a second conductive layer over the second insulating film, wherein the second conductive layer and the second oxide semiconductor layer overlap with each other with the second insulating film therebetween, wherein the second oxide semiconductor layer comprises a first region, wherein a resistivity of the first region of the second oxide semiconductor layer is lower than a resistivity of a second region of the first oxide semiconductor layer, and wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises indium and zinc. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. A semiconductor device comprising:
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a pixel portion; a gate driver electrically connected to the pixel portion through a gate line; and a protection circuit electrically connected to the gate line and located between the pixel portion and the gate driver, wherein the pixel portion comprises a transistor whose channel formation region comprises an oxide semiconductor comprising indium, gallium, and zinc, wherein the protection circuit comprises a resistor, wherein the resistor comprises; an oxide semiconductor layer electrically connected to a first conductive layer and a second conductive layer, the oxide semiconductor layer comprising indium, gallium, and zinc; a first insulating layer over the oxide semiconductor layer; and a second insulating layer over the first insulating layer, the second insulating layer being in contact with a top surface of the oxide semiconductor layer through an opening portion of the first insulating layer.
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Specification