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Resistor, display device, and electronic device

  • US 10,629,625 B2
  • Filed: 03/08/2019
  • Issued: 04/21/2020
  • Est. Priority Date: 12/25/2012
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a pixel portion comprising a transistor;

    a gate line electrically connected to the pixel portion; and

    a protection circuit electrically connected to the gate line,wherein the transistor comprises a first oxide semiconductor layer,wherein the protection circuit comprises a resistor,wherein the resistor comprises a second oxide semiconductor layer, an insulating film, a first wiring, and a second wiring,wherein each of the first wiring and the second wiring is in direct contact with a top surface of the second oxide semiconductor layer,wherein the second oxide semiconductor layer comprises a first region,wherein a resistivity of the first region of the second oxide semiconductor layer is different from a resistivity of the first oxide semiconductor layer,wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises indium and zinc,wherein the insulating film comprises hydrogen, andwherein the insulating film is over the second oxide semiconductor layer and in direct contact with a top surface of the first region of the second oxide semiconductor layer.

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