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Semiconductor device and manufacturing method thereof

  • US 10,629,627 B2
  • Filed: 03/16/2017
  • Issued: 04/21/2020
  • Est. Priority Date: 09/04/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a pixel portion comprising a pixel;

    a terminal portion outside the pixel portion; and

    a substrate,wherein the pixel comprises a transistor and a pixel electrode electrically connected to the transistor,wherein the transistor comprises;

    a gate electrode over the substrate;

    a first insulating layer over the gate electrode;

    a first oxide semiconductor layer over the first insulating layer; and

    a source electrode and a drain electrode each electrically connected to the first oxide semiconductor layer,wherein the pixel electrode overlaps with the first oxide semiconductor layer, the source electrode, and the drain electrode with a second insulating layer interposed therebetween,wherein the first oxide semiconductor layer comprises indium, gallium and zinc,wherein the terminal portion comprises;

    a first conductive layer over the substrate;

    the first insulating layer over the first conductive layer;

    a second conductive layer over the first insulating layer;

    the second insulating layer over the second conductive layer; and

    a third conductive layer over and in direct contact with the second insulating layer,wherein the second conductive layer comprises a first region in which the second conductive layer overlaps with the first conductive layer with the first insulating layer interposed therebetween,wherein the second conductive layer is in contact with the first conductive layer in a first opening of the first insulating layer,wherein the third conductive layer comprises a second region in which the third conductive layer overlaps with the second conductive layer with the second insulating layer interposed therebetween,wherein the third conductive layer is in contact with the second conductive layer in a second opening of the second insulating layer,wherein the gate electrode and the first conductive layer comprise a first material, andwherein the source electrode, the drain electrode and the second conductive layer comprise a second material.

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