Semiconductor device and manufacturing method thereof
First Claim
1. A semiconductor device comprising:
- a pixel portion comprising a pixel;
a terminal portion outside the pixel portion; and
a substrate,wherein the pixel comprises a transistor and a pixel electrode electrically connected to the transistor,wherein the transistor comprises;
a gate electrode over the substrate;
a first insulating layer over the gate electrode;
a first oxide semiconductor layer over the first insulating layer; and
a source electrode and a drain electrode each electrically connected to the first oxide semiconductor layer,wherein the pixel electrode overlaps with the first oxide semiconductor layer, the source electrode, and the drain electrode with a second insulating layer interposed therebetween,wherein the first oxide semiconductor layer comprises indium, gallium and zinc,wherein the terminal portion comprises;
a first conductive layer over the substrate;
the first insulating layer over the first conductive layer;
a second conductive layer over the first insulating layer;
the second insulating layer over the second conductive layer; and
a third conductive layer over and in direct contact with the second insulating layer,wherein the second conductive layer comprises a first region in which the second conductive layer overlaps with the first conductive layer with the first insulating layer interposed therebetween,wherein the second conductive layer is in contact with the first conductive layer in a first opening of the first insulating layer,wherein the third conductive layer comprises a second region in which the third conductive layer overlaps with the second conductive layer with the second insulating layer interposed therebetween,wherein the third conductive layer is in contact with the second conductive layer in a second opening of the second insulating layer,wherein the gate electrode and the first conductive layer comprise a first material, andwherein the source electrode, the drain electrode and the second conductive layer comprise a second material.
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Abstract
The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transimitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.
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Citations
13 Claims
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1. A semiconductor device comprising:
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a pixel portion comprising a pixel; a terminal portion outside the pixel portion; and a substrate, wherein the pixel comprises a transistor and a pixel electrode electrically connected to the transistor, wherein the transistor comprises; a gate electrode over the substrate; a first insulating layer over the gate electrode; a first oxide semiconductor layer over the first insulating layer; and a source electrode and a drain electrode each electrically connected to the first oxide semiconductor layer, wherein the pixel electrode overlaps with the first oxide semiconductor layer, the source electrode, and the drain electrode with a second insulating layer interposed therebetween, wherein the first oxide semiconductor layer comprises indium, gallium and zinc, wherein the terminal portion comprises; a first conductive layer over the substrate; the first insulating layer over the first conductive layer; a second conductive layer over the first insulating layer; the second insulating layer over the second conductive layer; and a third conductive layer over and in direct contact with the second insulating layer, wherein the second conductive layer comprises a first region in which the second conductive layer overlaps with the first conductive layer with the first insulating layer interposed therebetween, wherein the second conductive layer is in contact with the first conductive layer in a first opening of the first insulating layer, wherein the third conductive layer comprises a second region in which the third conductive layer overlaps with the second conductive layer with the second insulating layer interposed therebetween, wherein the third conductive layer is in contact with the second conductive layer in a second opening of the second insulating layer, wherein the gate electrode and the first conductive layer comprise a first material, and wherein the source electrode, the drain electrode and the second conductive layer comprise a second material. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a pixel portion comprising a pixel; a terminal portion outside the pixel portion; and a substrate, wherein the pixel comprises a transistor and a pixel electrode electrically connected to the transistor, wherein the transistor comprises; a gate electrode over the substrate; a first insulating layer over the gate electrode; a first oxide semiconductor layer over the first insulating layer; and a source electrode and a drain electrode each electrically connected to the first oxide semiconductor layer, wherein the pixel electrode overlaps with the first oxide semiconductor layer, the source electrode, and the drain electrode with a second insulating layer interposed therebetween, wherein the first oxide semiconductor layer comprises indium, gallium and zinc, wherein the terminal portion comprises; a first conductive layer over the substrate; the first insulating layer over the first conductive layer; a second conductive layer over the first insulating layer; the second insulating layer over the second conductive layer; and a third conductive layer over and in direct contact with the second insulating layer, wherein the second conductive layer comprises a first region in which the second conductive layer overlaps with the first conductive layer with the first insulating layer interposed therebetween, wherein the second conductive layer is in contact with the first conductive layer in a first opening of the first insulating layer, wherein the third conductive layer comprises a second region in which the third conductive layer overlaps with the second conductive layer with the second insulating layer interposed therebetween, wherein the third conductive layer is in contact with the second conductive layer in a second opening of the second insulating layer, wherein the gate electrode and the first conductive layer comprise a first material, and wherein the source electrode, the drain electrode and the second conductive layer comprise indium and zinc. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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Specification