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Method and device for shallow trench isolation in a fin type field effect transistors

  • US 10,629,741 B1
  • Filed: 10/30/2018
  • Issued: 04/21/2020
  • Est. Priority Date: 10/30/2018
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor device, comprising:

  • providing a semiconductor device structure, the semiconductor device structure comprising;

    semiconductor fins pitched at a fin pitch on a substrate;

    an isolation oxide layer on the substrate and between the semiconductor fins;

    a mask, disposed over the isolation oxide layer, the mask defining a at least one opening;

    forming a hard mask layer over the semiconductor fins;

    removing a portion of the semiconductor fins to reveal two pairs of the semiconductor fins, a first pair of the semiconductor fins to form channels for p-channel metal oxide field effect transistors and a second pair of the semiconductor fins to form channels for n-channel metal oxide field effect transistors;

    forming the isolation oxide layer on the substrate and between the semiconductor fins;

    forming the mask with the at least one opening over ends of the first pair of the semiconductor fins;

    directing hot ions into the at least one opening, to implant hot ions in a volume of isolation oxide in the isolation oxide layer, the volume adjacent to at least one of the semiconductor fins; and

    removing the hard mask.

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