Ultra-wideband light emitting diode and optical detector comprising indium gallium arsenide phosphide and method of fabricating the same
First Claim
1. An optical source comprising:
- a substrate;
a carrier confinement (CC) region positioned over the substrate, the CC region defining;
a first CC layer that is a wideband gap CC layer comprising at least one of indium gallium phosphide, aluminum gallium arsenide, and gallium arsenide phosphide;
a second CC layer positioned over the first CC layer, the second CC layer is a wideband gap CC layer comprising at least one of indium gallium phosphide and aluminum gallium arsenide;
andan active region positioned over the CC region, wherein;
the active region comprises indium gallium arsenide;
the active region has an indium composition between 10% and 35%; and
the active region is configured to have a transient response time of less than 500 picoseconds (ps).
1 Assignment
0 Petitions
Accused Products
Abstract
Devices, systems, and methods for providing wireless personal area networks (PANs) and local area networks (LANs) using visible and near-visible optical spectrum. Various constructions and material selections are provided herein. According to one embodiment, a light-emitting diode (LED) includes a substrate, a carrier confinement (CC) region positioned over the substrate, and an active region positioned over the CC region. The CC region includes a first CC layer that is a wideband gap CC layer including indium gallium phosphide or aluminum gallium arsenide. The CC region includes a second CC layer positioned over the first CC layer. The second CC layer is a wideband gap CC layer that includes indium gallium phosphide or aluminum gallium arsenide. The active region is configured to have a transient response time of less than 500 picoseconds (ps).
-
Citations
32 Claims
-
1. An optical source comprising:
-
a substrate; a carrier confinement (CC) region positioned over the substrate, the CC region defining; a first CC layer that is a wideband gap CC layer comprising at least one of indium gallium phosphide, aluminum gallium arsenide, and gallium arsenide phosphide; a second CC layer positioned over the first CC layer, the second CC layer is a wideband gap CC layer comprising at least one of indium gallium phosphide and aluminum gallium arsenide; and an active region positioned over the CC region, wherein; the active region comprises indium gallium arsenide; the active region has an indium composition between 10% and 35%; and the active region is configured to have a transient response time of less than 500 picoseconds (ps). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
-
-
32. A method of forming an optical source, comprising:
-
providing an epitaxial structure on a substrate, the epitaxial structure comprising; a carrier confinement (CC) region positioned over the substrate, the CC region defining; a first CC layer that is a wideband gap CC layer comprising at least one of indium gallium phosphide and aluminum gallium arsenide; and a second CC layer positioned on the first CC layer, the second CC layer is a wideband gap CC layer comprising at least one of indium gallium phosphide, aluminum gallium arsenide, and gallium arsenide phosphide; and an active region over the CC region, wherein; the active region comprises indium gallium arsenide; the active region has an indium composition between 10% and 35%; and the active region is configured to have a transient response time of less than 500 picoseconds (ps).
-
Specification