Method of manufacturing magnetoresistive device

• US 10,629,804 B2
• Filed: 02/26/2007
• Issued: 04/21/2020
• Est. Priority Date: 03/03/2006
• Status: Active Grant

• Current Assignee: Canon Anelva Corporation (Canon Inc.)
• Original Assignee: Canon Anelva Corporation (Canon Inc.)
• Inventors: Nagamine, Yoshinori, Tsunekawa, Koji, Djayaprawira, David Djulianto, Maehara, Hiroki
• Primary Examiner(s): Eslami, Tabassom Tadayyon
• Application Number:
  US12/224,646
• Publication Number:
  US 20090148595A1
• Time in Patent Office: 4,803 Days
• Field of Search: 42725529, 427127, 427128, 427129, 427130, 427131, 427132, 4288111, 428 58, 3603242, 360328, 118719, 118726
• CPC Class Codes: C23C 14/081 of aluminium, magnesium or beryllium
• CPC Class Codes: C23C 14/16 on metallic substrates or on substrates of boron or silicon
• CPC Class Codes: C23C 14/568 Transferring the substrates through a series of coating stations C23C14/562 takes precedence
• CPC Class Codes: H01J 37/32458 Vessel
• CPC Class Codes: H01J 37/32633 Baffles
• CPC Class Codes: H01J 37/34 operating with cathodic sputtering H01J37/36 takes precedence ; methods of cathodic sputtering C23C14/34
• CPC Class Codes: H01J 37/3429 Plural materials
• CPC Class Codes: H01J 37/3447 Collimators, shutters, apertures
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

A magnetoresistance device has an MgO (magnesium oxide) layer provided between a first ferromagnetic layer and a second ferromagnetic layer. The device is manufactured by forming a film of the MgO layer in a film forming chamber. A substance whose getter effect with respect to an oxidizing gas is large is adhered to surfaces of components provided in the chamber for forming the MgO layer. The substance having a large getter effect is a substance whose value of oxygen gas adsorption energy is 145 kcal/mol or higher. Ta (tantalum), in particular, is preferable as a substance which constitutes the magnetoresistance device.

Claims

1. A method of manufacturing a magnetoresistive device having a lower electrode, a first ferromagnetic layer arranged above the lower electrode, an MgO layer arranged above the first ferromagnetic layer, a second ferromagnetic layer arranged above the MgO layer, and an upper electrode arranged above the second ferromagnetic layer, the method comprising:

(a) providing a first film forming chamber comprising a Ta target, a MgO target, a partitioning member arranged between the Ta target and the MgO target such that a first space in which the Ta target is arranged is partitioned by the partitioning member from a second space in which the MgO target is arranged, a first shutter configured to shield the Ta target, a second shutter configured to shield the MgO target, and a substrate holder configured to hold a substrate;

(b) performing a pre-sputtering in the film forming chamber for pre-sputtering the Ta target in a state that the first and second shutters are closed;

(c) forming the lower electrode above the substrate placed on the substrate holder, in the first film forming chamber, by sputtering the Ta target, wherein Ta is adhered to a component of the first film forming chamber so as to form a Ta film as an outermost surface on the component, during the forming of the lower electrode, the partitioning member including a portion arranged at a position directly above a center of the substrate holder;

(d) transferring the substrate having the lower electrode, from the first film forming chamber to a second film forming chamber comprising a ferromagnetic material target for forming the first ferromagnetic layer;

(e) forming the first ferromagnetic layer above the lower electrode, in the second film forming chamber, by sputtering the ferromagnetic material target;

(f) transferring the substrate having the first ferromagnetic layer to the first film forming chamber;

(g) exhausting the first film forming chamber into a vacuum state with a background pressure less than 10-7 Pa, wherein the MgO target is a sintered compact having a porous structure such that oxidizing gas is absorbed to the MgO target even at the vacuum state with the background pressure less than 10<sup>−

7</sup> Pa; and

(h) forming the MgO layer on the first ferromagnetic layer by sputtering the MgO target, in the first film forming chamber in a state that the first film forming chamber has the Ta film as the outermost surface on the component thereof, wherein the sputtering the MgO target causes the oxidizing gas which has been absorbed to the MgO target to be discharged from the MgO target into a space within the first film forming chamber, and the discharged oxidizing gas is absorbed to the Ta film as the outermost surface on the component by a getter effect provided by the Ta film, which improves quality of the MgO layer.

2. The method according to claim 1, wherein the first film forming chamber includes a substrate holder and a partitioning member between the Ta target and the MgO target, and a said lower end surface of the partitioning member is parallel to an upper face of the substrate holder.

3. The method according to claim 1, wherein the first film forming chamber includes a substrate holder and a partitioning member between the Ta target and the MgO target, and a said lower end surface of the partitioning member is arranged at a position lower than a position where an upper surface of the first shutter is arranged.

4. The method according to claim 1, wherein the first film forming chamber includes a substrate holder and a partitioning member between the Ta target and the MgO target, and a portion of the partitioning member has a lower end surface facing an upper face of the substrate holder.

5. The method according to claim 4, wherein said lower end surface is parallel to the upper face of the substrate holder.

6. The method according to claim 4, wherein said lower end surface is arranged lower than an upper surface of the first shutter is arranged.

7. The method according to claim 1, wherein the pre-sputtering is performed while making a third shutter, which is arranged between the substrate holder and a space where the first shutter and the second shutter are arranged, at a closed state, and

wherein the forming of the lower electrode includes forming the lower electrode by sputtering the Ta target while making the third shutter at an opened state, making the third shutter at the closed state, and then turning off a high-frequency power which has been applied to the Ta target.

8. A method of manufacturing a magnetoresistive device having a first ferromagnetic layer, an MgO layer arranged above the first ferromagnetic layer, and a second ferromagnetic layer arranged above the MgO layer, the method comprising:

(a) providing a film forming chamber comprising a first target comprising Ta which is an element having a higher getter effect with respect to an oxidizing gas than MgO, and a second target comprising MgO;

(b) opening a first shutter for enclosing the first target, while closing a second shutter for enclosing the second target;

(c) performing a first sputtering process in the film forming chamber for sputtering the first target such that a first substance is adhered to an interior surface of the film forming chamber facing the interior of the film forming chamber; and

(d) performing a second process for forming the MgO layer on a substrate in the film forming chamber, after the first sputtering process, the second process for forming the MgO layer comprising opening the second shutter, carrying out a second sputtering process;

wherein the second process is a next process performed in the film forming chamber after the first sputtering process so that the first substance is the last substance formed on the interior surface of the film forming chamber.

9. A method of manufacturing a magnetoresistive device having a first ferromagnetic layer, an MgO layer arranged above the first ferromagnetic layer, and a second ferromagnetic layer arranged above the MgO layer, the method comprising:

(a) providing a film forming chamber comprising a first target comprising Ta which is an element having a higher getter effect with respect to an oxidizing gas than MgO, and a second target comprising MgO;

(b) opening a first shutter for enclosing the first target, while closing a second shutter for enclosing the second target;

(c) performing a first sputtering process in the film forming chamber for sputtering the first target such that the first substance is adhered to an interior surface of the film forming chamber facing the interior of the film forming chamber; and

(d) performing a second process for forming the MgO layer on a substrate in the film forming chamber, after the first sputtering process, the second process for forming the MgO layer comprising opening the second shutter, carrying out a second sputtering process;

wherein the first and second targets are the only targets in the film forming chamber.

10. A method of manufacturing a magnetoresistive device having an electrode layer, a first ferromagnetic layer above the electrode layer, an MgO layer arranged above the first ferromagnetic layer, and a second ferromagnetic layer arranged above the MgO layer, the method comprising:

(a) performing a first sputtering process in a first film forming chamber comprising a first target comprising Ta which is an element having a higher getter effect with respect to an oxidizing gas than MgO, and a second target comprising MgO, the first sputtering process including sputtering the first target such that the electrode layer of Ta is formed above a substrate, and Ta is adhered to an interior surface of the film forming chamber facing the interior of the film forming chamber;

(b) after the first sputtering process, performing a second sputtering process in a second film forming chamber such that the first ferromagnetic layer is formed above the electrode layer; and

(c) after the second sputtering process, performing a third sputtering process in the first film forming chamber in a state that Ta adhered to the interior surface of the first film forming chamber is exposed to the interior of the film forming chamber, the third sputtering process including sputtering the second target such that the MgO layer is formed above the first ferromagnetic layer.