Methods of protecting structure of integrated circuit from rework
First Claim
1. A method of protecting an opening profile of an integrated circuit from rework, the method comprising:
- forming a first layer on a second layer, at least one of the first and second layers being a metal-containing layer;
forming one or more first openings in the first layer, the one or more first openings defining the opening profile of the integrated circuit and exposing a top surface of the second layer;
selectively growing a Group VIII metal within the one or more first openings, thereby forming one or more first plugs;
forming one or more final openings in the first layer while the one or more first openings in the first layer are protected by the one or more first plugs; and
removing the one or more first plugs.
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Accused Products
Abstract
The present disclosure relates to methods of protecting a structure of an integrated circuit (IC) from rework, and more particularly, to methods of protecting a structure of an IC without impacting the critical dimension or the profile of the structure. For example, a method of protecting a structure of an IC from rework may include forming a first layer on a second layer; forming one or more first openings in the first layer, the first openings exposing a top surface of the second layer; selectively growing a Group VIII metal within the one or more first openings, thereby forming one or more first plugs; forming one or more final openings in the first layer; and removing the one or more first plugs.
2 Citations
20 Claims
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1. A method of protecting an opening profile of an integrated circuit from rework, the method comprising:
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forming a first layer on a second layer, at least one of the first and second layers being a metal-containing layer; forming one or more first openings in the first layer, the one or more first openings defining the opening profile of the integrated circuit and exposing a top surface of the second layer; selectively growing a Group VIII metal within the one or more first openings, thereby forming one or more first plugs; forming one or more final openings in the first layer while the one or more first openings in the first layer are protected by the one or more first plugs; and removing the one or more first plugs. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method of protecting an opening profile of an integrated circuit from rework, the method comprising:
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forming a first layer on a second layer, the first or second layer being a titanium nitride (TiN) layer; forming an over-layer stack on the first layer, the over-layer stack comprising a resist layer having one or more resist openings; forming one or more first openings through the first layer at the one or more resist openings, the one or more first openings defining the opening profile of the integrated circuit, and exposing the top surface of the second layer; removing at least a portion of the over-layer stack; selectively growing cobalt (Co) or ruthenium (Ru) within the one or more first openings, thereby forming one or more first plugs; removing any remaining portion of the over-layer stack; forming one or more final openings in the first layer in the first layer while the one or more first openings in the first layer are protected by the one or more first plugs; and removing the one or more first plugs. - View Dependent Claims (20)
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Specification