Dielectric isolation in gate-all-around devices
First Claim
1. A semiconductor device comprising:
- a first layer deposited over a surface of a substrate;
a second set of layers of a channel material deposited over the first layer;
a liner deposited in a first recess;
a first connection end of a layer in the second set exposed from the liner;
an insulator material filling the first recess up to a height above the surface of the substrate; and
an electrical connection formed with a source/drain structure using the first connection end of the layer in the second set, wherein a remaining portion of the insulator below the height and a remaining portion of the liner in the first recess electrically isolates the source/drain structure from the substrate and increases impedance in a path of a substrate current from the source/drain structure to the substrate.
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Accused Products
Abstract
A semiconductor device is fabricated with a first layer of a first sacrificial material deposited over a surface of a substrate. A first set of layers of a second sacrificial material and a second set of layers of a channel material are deposited over the first layer. A liner is deposited in a first recess, which exposes a first connection end of a layer in the second set, where the first recess reaches into the substrate for at least a fraction of a total depth of the substrate. An insulator material is filled in the first recess and etched up to a stop depth, stopping the etching at a height above the surface of the substrate. The liner is removed from at least the first connection end of the layer in the second set. An electrical connection is formed with a source/drain structure using the first connection end.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a first layer deposited over a surface of a substrate; a second set of layers of a channel material deposited over the first layer; a liner deposited in a first recess; a first connection end of a layer in the second set exposed from the liner; an insulator material filling the first recess up to a height above the surface of the substrate; and an electrical connection formed with a source/drain structure using the first connection end of the layer in the second set, wherein a remaining portion of the insulator below the height and a remaining portion of the liner in the first recess electrically isolates the source/drain structure from the substrate and increases impedance in a path of a substrate current from the source/drain structure to the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method comprising:
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depositing, over a surface of a substrate, a first layer; depositing, over the first layer, a second set of layers of a channel material; depositing a liner in a first recess; exposing from the liner a first connection end of a layer in the second set; causing the first recess to be occupied with an insulator material up to a height above the surface of the substrate; and enabling the first connection end of the layer in the second set to form an electrical connection with a source/drain structure, wherein a remaining portion of the insulator below the height and a remaining portion of the liner in the first recess electrically isolates the source/drain structure from the substrate and increases impedance in a path of a substrate current from the source/drain structure to the substrate. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. A semiconductor fabrication system comprising a lithography component, the semiconductor fabrication system when operated on a wafer to fabricate a semiconductor device performing operations the comprising:
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depositing, over a surface of a substrate, a first layer; depositing, over the first layer, a second set of layers of a channel material; depositing a liner in a first recess; exposing from the liner a first connection end of a layer in the second set; causing the first recess to be occupied with an insulator material up to a height above the surface of the substrate; and enabling the first connection end of the layer in the second set to form an electrical connection with a source/drain structure, wherein a remaining portion of the insulator below the height and a remaining portion of the liner in the first recess electrically isolates the source/drain structure from the substrate and increases impedance in a path of a substrate current from the source/drain structure to the substrate. - View Dependent Claims (20)
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Specification