High pressure annealing of metal gate structures
First Claim
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1. A method of treating a film stack, comprising:
- depositing a barrier film comprising a metal into a via formed within a dielectric layer disposed on a substrate;
depositing a metal contact on the barrier film within the via, wherein a void is located between two barrier layers contained within the barrier film; and
exposing the metal contact and the barrier film to an oxidizing agent at a temperature of less than 400°
C. and at a pressure of about 20 bar to about 100 bar within a process chamber to produce a metal oxide within the void.
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Abstract
The method of treating a film stack includes depositing a barrier film containing a metal into a via formed within a dielectric layer disposed on a substrate and depositing a metal contact on the barrier film within the via, where a void is located within the barrier film or between the barrier film and the metal contact. The method also includes exposing the metal contact and the barrier film to an oxidizing agent at a temperature of less than 400° C. and at a pressure of about 20 bar to about 100 bar within a process chamber to produce a metal oxide within the void.
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Citations
20 Claims
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1. A method of treating a film stack, comprising:
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depositing a barrier film comprising a metal into a via formed within a dielectric layer disposed on a substrate; depositing a metal contact on the barrier film within the via, wherein a void is located between two barrier layers contained within the barrier film; and exposing the metal contact and the barrier film to an oxidizing agent at a temperature of less than 400°
C. and at a pressure of about 20 bar to about 100 bar within a process chamber to produce a metal oxide within the void. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of treating a film stack, comprising:
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depositing a barrier film comprising a metal into a via located on a substrate; depositing a metal contact on the barrier film within the via, wherein a void is located within the barrier film or between the barrier film and the metal contact; exposing the metal contact and the barrier film to an oxidizing agent at a temperature of less than 400°
C. and at a pressure of about 20 bar to about 100 bar within a process chamber to produce a metal oxide within the void; and
thenexposing the metal contact and the barrier film to an annealing gas a temperature of less than 400°
C. and at a pressure of about 20 bar to about 100 bar within the process chamber, wherein the annealing gas comprises nitrogen gas (N2), ammonia, hydrogen gas (H2), or a mixture thereof. - View Dependent Claims (15, 16)
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17. A method of treating a film stack, comprising:
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depositing a barrier film comprising a metal into a via formed within a dielectric layer disposed on a substrate; depositing a metal contact on the barrier film within the via, wherein a void is located within the barrier film or between the barrier film and the metal contact; and exposing the metal contact and the barrier film to an oxidizing agent at a temperature of less than 400°
C. and at a pressure of about 20 bar to about 100 bar within a process chamber to produce a metal oxide within the void; and
thenexposing the metal contact and the barrier film to an annealing gas at a temperature of less than 400°
C. and at a pressure of about 20 bar to about 60 bar within the process chamber, wherein the annealing gas comprises nitrogen gas (N2), ammonia, hydrazine, hydrogen gas (H2), forming gas, or any combination thereof. - View Dependent Claims (18, 19, 20)
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Specification